2SD966 Search Results

2SD966

Contextual Info: ST 2SD966 NPN Silicon Epitaxial Planar Transistor for low-frequency power amplification and stroboscope. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SD0966

Abstract: 2SD966
Contextual Info: Transistor 2SD0966 2SD966 Silicon NPN epitaxial planer type For low-frequency power amplification For stroboscope Unit: mm 5.9±0.2 4.9±0.2 • Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage

transistor 2sd966

Abstract: 2SD966 5021H
Contextual Info: Transistor 2SD966 Silicon NPN epitaxial planer type For low-frequency power amplification For stroboscope Unit: mm 5.9±0.2 4.9±0.2 Low collector to emitter saturation voltage VCE sat . Satisfactory operation performances at high efficiency with the low-voltage power supply.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0966 (2SD966) Silicon NPN epitaxial planar type For low-frequency amplification For stroboscope Unit: mm 4.9±0.2 M Di ain sc te on na tin nc ue e/ d 8.6±0.2 5.9±0.2 • Features

2SD966

Contextual Info: ST 2SD966 NPN Silicon Epitaxial Planar Transistor for low-frequency power amplification and stroboscope. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SD0966

Abstract: 2SD966
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0966 (2SD966) Silicon NPN epitaxial planar type For low-frequency amplification For stroboscope Unit: mm 4.9±0.2 0.7+0.3 –0.2 0.7±0.1 13.5±0.5 • Low collector-emitter saturation voltage VCE(sat)

2SD0966

Abstract: 2SD966
Contextual Info: Transistors 2SD0966 2SD966 Silicon NPN epitaxial planar type For low-frequency amplification For stroboscope Unit: mm 4.9±0.2 8.6±0.2 5.9±0.2 • Features 0.7+0.3 –0.2 0.7±0.1 13.5±0.5 • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the lowvoltage power supply.

2SD0966

Abstract: 2SD966
Contextual Info: Transistors 2SD0966 2SD966 Silicon NPN epitaxial planar type For low-frequency amplification For stroboscope Unit: mm 4.9±0.2 8.6±0.2 5.9±0.2 M Di ain sc te on na tin nc ue e/ d • Features 0.7+0.3 –0.2 0.7±0.1 13.5±0.5 • Low collector-emitter saturation voltage VCE(sat)

2SD966

Contextual Info: ST 2SD966 NPN Silicon Epitaxial Planar Transistor for low-frequency power amplification and stroboscope. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

Contextual Info: 2SD966 NPN Silicon Epitaxial Planar Transistor for low-frequency power amplification and stroboscope. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SD966

Abstract: 2sd966 equivalent
Contextual Info: ST 2SD966 NPN Silicon Epitaxial Planar Transistor for low-frequency power amplification and stroboscope. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SD0966

Abstract: 2SD966
Contextual Info: Transistor 2SD0966 2SD966 Silicon NPN epitaxial planer type For low-frequency power amplification For stroboscope Unit: mm 5.9±0.2 4.9±0.2 Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the

2SC3941A

Abstract: c3277 2SC3531 2sc3358 2SC3924 2SC3532 2sc3225 2SC3356 2sc3691 2SC3737
Contextual Info: - m % tt Type No. € Manuf. 2SC 3718 = * SANYO JK S TOSHIBA fé T 2SC2791 2SC 3720 fé T 0 Sl □-A 2SC3608 2SC 3722 2SC 3723 S± £ 2SC 3724 *± w i 2SC 3725 ^ 2SC 3726 J' =~ = = s s m æ s i à m / m. 2SC 3727 2SC 3728 2SC 37 29 y 2SC 3730 2SC 37 3 ! 2SC 3732

2SC1565

Abstract: 2sD1392 2SC3469 2SD1431 2SC495 2SC2824 2SD1388 2SD600 2SD1876 2SD1499
Contextual Info: - M € T y p e No. tt it 2SD 1377K eh ft 2SD 1377 - 2SD 13 7 8 □— A 2SD 1 379 € Manuf. m h SANYO 2 TOSHIBA 2SC1212A 2SD549 2SD1520L/S 2SC2877 2SD 1381 - □ —A 2SD600 2SC2824 2SD 1382 — □ —A 2SD600 2SC2824 2SD 1383 s. □ —A □ —A 2SD1207

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

2SD921

Abstract: 2SD920 T03B 2SD983 2SB793 2SD933H 2SD947 2SD917 2SD922 2SD923
Contextual Info: - 230 - 13=25*0. *EP(äTc=25'1C m ?± ^ m £ VcBO Vc e o (V) (V) IC ( D C ) föT T V Hout 330 200 7 2SD920 % ± im Reg/PA 200 180 5 Reg/PA 200 180 Reg/PA 150 100 Reg/PA 150 100 Reg/PA 200 HV S W / O ' t O 2SD922 2SD923 % ± im %±Gm -M ± m m 2SD929 2SD933H

2SB600 NEC

Abstract: 2SD965 2SD966 2SD2061 2SB600 1951b 2sc3677 2SC3421 2SD1483 2sd1944
Contextual Info: - m % tt Type No. 2S0 1951 2SD 1952 ^ 2SD 1953 ^ 2SD 1955 2S0 1956 2SD 1957 2SD 1958 2SD 2SD 2SD 2SD 2 so « 0 S ft Z SANYO 2SDS79 2SD15Z4 * $ TOSHIBA 2SC3266 H ft iL m NEC tL HITACHI 2SC2873 2SD1887 2SC3299 2SD1548 1953 □— A 2SD1145 2SD1628 2SD 1964 .

2SD1165A

Abstract: D 1163 A 2SD1084 D1138 2sc2373 2Sd1165 2sD1307 2SD1961 2SD1265 1170 T
Contextual Info: - 232 - m € Type No. € tt Maniif. =M H SANYO nt s TOSHIBA a b NEC 31 HITACHI m ± il FUJITSU ft T MATSUSHITA jr. H MITSUBISHI □ — A ROHM 2 S D 1135 <- s a 2 S D 1136 * s a 2 S D 1137 ✓ s a 2SD743A 2SD857 2SD1896 s a 2SC2336A 2SC2660 2SD1562A 2 S D 1138 ,

1271A

Abstract: nec 1251 2SB2198 2SD1227M 2sd1070 2SC4008 2SD2394 2SD1593 2sd1855 2sd1944
Contextual Info: - S « Type No. tt 2SD 1243 » 2SD 1243A T 2SD 1245 fé fé fé 2S0 1246 H W 2SD 1247 y =- 2SD 1248 . 2SD 1244 « Manuf. H n SANYO T 2SD1064 T 2SD1064 Ä $ TOSHIBA a NEC B ÌL HITACHI □ MITSUBISHI h, ROHM 2SD1962M 2SC32S6 2SD1196 i 2SD1227M 2SD965 2SD1513

NEC 1357

Abstract: SD 1351 2SD1370 2SD869 TOSHIBA NEC 2SD288 2sc4329 D1351 2SD1944 2SC3252 k 1358
Contextual Info: - 238 - m % tt Type No. £ Manuf. H # SANYO It 2Ê TOSHIBA 2SD869 = ft ft 2SD1887 ^ 2SD1884 2SD820 2 S D 1342 = ft 2SD870 H ft 2SD1878 2SD 1343 ✓ 2SD1885 2SD821 2SD 1344 H ft 2SD18B5 2SD871 2SD1061 2SD553 2 S D 1340 2 S D 1341 = 2SD 1345 # 2 S D 134/ = ft

LM8550

Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
Contextual Info: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *