2SD1752A Search Results

2SB1148

Abstract: 2SB1148A 2SD1752 2SD1752A
Contextual Info: Power Transistors 2SD1752, 2SD1752A Silicon NPN epitaxial planar type For power amplification and low-voltage switching Complementary to 2SB1148 and 2SB1148A Unit: mm 7.0±0.3 0.8±0.2 1.0±0.2 3.5±0.2 2.0±0.2 20 VCEO emitter voltage 2SD1752A 7.0±0.3 3.0±0.2

Contextual Info: Power Transistors 2SD1752, 2SD1752A Silicon NPN epitaxial planar type For power amplification and low-voltage switching Complementary to 2SB1148 and 2SB1148A Unit : mm 12.6±0.3 7.2±0.3 M Di ain sc te on na tin nc ue e/ d 1.1±0.1 2SD1752 VCBO 40 2SD1752A

2SB1148

Abstract: 2SB1148A 2SD1752 2SD1752A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1148, 2SB1148A Silicon PNP epitaxial planar type For low-voltage switching Complementary to 2SD1752 and 2SD1752A Unit: mm 3.0±0.2 2.0±0.2 2SB1148 Collector-base voltage (Emitter open)

2SB1148

Abstract: 2SB1148A 2SD1752 2SD1752A
Contextual Info: Power Transistors 2SB1148, 2SB1148A Silicon PNP epitaxial planar type For low-voltage switching Complementary to 2SD1752 and 2SD1752A Unit: mm Collector-base voltage Emitter open 1.1±0.1 Rating Unit VCBO −40 V 0.75±0.1 0.4±0.1 1.0±0.2 Symbol 2SB1148

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1148, 2SB1148A Silicon PNP epitaxial planar type For low-voltage switching Complementary to 2SD1752 and 2SD1752A Unit: mm Collector-base voltage (Emitter open) 1.1±0.1 Rating

2SB1148

Abstract: 2SB1148A 2SD1752 2SD1752A ic max 232 1023Q
Contextual Info: Power Transistors 2SD1752, 2SD1752A Silicon NPN epitaxial planar type For power amplification and low-voltage switching Complementary to 2SB1148 and 2SB1148A Unit: mm 7.0±0.3 0.8±0.2 1.0±0.2 3.5±0.2 2.0±0.2 20 VCEO emitter voltage 2SD1752A 7.0±0.3 3.0±0.2

2SB1148

Abstract: 2SB1148A 2SD1752 2SD1752A
Contextual Info: Power Transistors 2SB1148, 2SB1148A Silicon PNP epitaxial planar type Unit: mm For low-voltage switching Complementary to 2SD1752 and 2SD1752A 7.0±0.3 2SB1148 base voltage 2SB1148A Collector to Ratings +0.3 1.0±0.2 2 1:Base 2:Collector 3:Emitter I Type Package

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1148, 2SB1148A Silicon PNP epitaxial planar type For low-voltage switching Complementary to 2SD1752 and 2SD1752A Unit: mm Collector-base voltage (Emitter open) 1.1±0.1 Rating

2SB1148

Abstract: 2SB1148A 2SD1752 2SD1752A
Contextual Info: Power Transistors 2SB1148, 2SB1148A Silicon PNP epitaxial planar type Unit: mm For low-voltage switching Complementary to 2SD1752 and 2SD1752A 7.0±0.3 2SB1148 base voltage 2SB1148A Collector to Ratings +0.3 1.0±0.2 2 1:Base 2:Collector 3:Emitter I Type Package

2SD1752A

Abstract: 2SB1148 2SB1148A 2SD1752
Contextual Info: Power Transistors 2SD1752, 2SD1752A Silicon NPN epitaxial planar type For power amplification and low-voltage switching Complementary to 2SB1148 and 2SB1148A Unit : mm 3.0±0.2 2.0±0.2 Collector-base voltage Emitter open Rating Unit VCBO 40 V 2SD1752A 1.0±0.2

Contextual Info: Power Transistors 2SB1148, 2SB1148A 2SB1148, 2SB1148A Silicon PNP Epitaxial Planar Type Package Dimensions Low Voltage Switching Complementary Pair w ith‘2SD1752, 2SD1752A •Features U nit : mm 3.7max. 7.3max. 3.2max. • Low collector-eim itter saturation voltage VcEtsao

P842

Abstract: B 1148 2SB1148 2SB1148A 2SD1752 2SD1752A
Contextual Info: 2SD1752, 2SD1752A Power Transistors 2S D 1752, 2SD 1752A Silicon NPN Epitaxial Planar Type P o w e r A m p lifie r V o lta g e S w itch in g C o m p le m e n ta ry P a ir with 2 S B 1 1 4 8 , 2 S B 1 1 4 8 A • F e a tu re s • L ow c o lle c to r-e m itte r s a tu ra tio n vo ltag e

2SB1148

Abstract: 2SB1148A 2SD1752 2SD1752A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1752, 2SD1752A Silicon NPN epitaxial planar type For power amplification and low-voltage switching Complementary to 2SB1148 and 2SB1148A Unit : mm M Di ain sc te on na tin nc

npn 6bt

Contextual Info: Power Transistors 2SD1752, 2SD1752A 2SD1752, 2SD1752A Silicon NPN Epitaxial Planar Type Package Dim ensions Power A m plifier Voltage Switching C om plem entary Pair with 2SB1148, 2SB1148A • Features • L o w c o lle c to r -e m itte r sa tu ration v o lta g e VcEisatj

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

2SD1761

Abstract: 2S01761 2sd1764 2sb117 2SD1760F5 2SD1746 2SD1747 2SD1747A 2SD1748 2SD1748A
Contextual Info: - 254 - m Ta=25‘ C , *EP(iTc=25°C 2SD1746 fôT 2SD1747 2SD1747A fâT 2SD1748 2SD1748A VcBO VcEO (V) (V) Iccdc) (A) Pc Pci (W) (W) ICBO. (max) Cí¿A) VcB (V) % (min) Kl & 14 (Ta=25tC ) hF E (max) V'cE (V) [*EPIàtypii] VcE(sat \iîiax^ (V) iC/ 1E (A)

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

D1276A

Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Contextual Info: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SD1617

Abstract: 2sb111 2SB1116 2SB1116A 2SB1119 2SB1120 2SB1121 2SB1122 2SB1123 2SB1124
Contextual Info: - 76 - Ta=25^,*03{ÎTc=25t ít S Veso Vc e o (V) (V) IC(DC) (A) Pc* (W) (W) 2SB11Í5A a n L F PA -80 2SB1116 BU LF PA/ MS S W -60 - 50 -1 2SB1116A s LF PA/ MS SW - 80 -60 -1 2SB1U7 BM LF PA/ MS SW -30 -25 -3 1 2SB1U8 H # L F PA -20 -15 -0. 7 0. 5 n -60

2SD1555

Abstract: 2SB1833 2SD1876 2SD1878 2SD772 nec 2sc2562 2SD1406 2SD1546 ZSD15 2SD1548
Contextual Info: - Si € Type No. 2SD 18S3^-2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2S0 1584 *•" 1885 ^ 1886 y 1887 ^ 1888 , 1889 / 1890 ^ 1891 1892 1896 189? 1898 * 2SD 2SD 2SD 2SD 2SD 2S0 2SD 2SD 1899 ~ 1899-Z 1900 1901 1902 „ 1903 * 1904 J 1905 ^ 2SD 2SD 2S0 2S0