2SC3709A Search Results

C3709A

Abstract: 2SA1451A 2SC3709A
Contextual Info: 2SC3709A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3709A High-Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 s (typ.) • Complementary to 2SA1451A

Contextual Info: TO SH IB A 2SC3709A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3709A HIGH CURRENT SWITCHING APPLICATIONS • • INDUSTRIAL APPLICATIONS Low Collector Saturation Voltage : (sat) = 0.4V (Max.) High Speed Switching Time : tstg=1.0//s (Typ.)

a1451a

Abstract: 2SA1451A A1451 2SC3709A
Contextual Info: 2SA1451A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1451A High-Speed, High-Current Switching Applications • Low collector saturation voltage • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SC3709A Unit: mm : VCE (sat) = −0.4 V (max) (IC = −6 A)

2SA1451A

Abstract: 2SC3709A
Contextual Info: TO SH IBA 2SC3709A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3709A HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm • Low Collector Saturation Voltage : V^g 0.4V (Max.) • High Speed Switching Time : tgtg^l.O/^s (Typ.)

a1451a

Contextual Info: 2SA1451A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1451A High-Speed, High-Current Switching Applications • Low collector saturation voltage • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SC3709A Unit: mm : VCE (sat) = −0.4 V (max) (IC = −6 A)

2SA1451A

Abstract: 2SC3709A
Contextual Info: TO SH IBA 2SC3709A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3709A HIGH CURRENT SWITCHING APPLICATIONS Unit in mm • Low Collector Saturation Voltage : V^g 0.4V (Max.) • High Speed Switching Time : tgtg^l.O/^s (Typ.) • Complementary to 2SA1451A

C3709A

Abstract: 2SA1451A 2SC3709A C3709
Contextual Info: 2SC3709A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3709A High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1451A

WE VQE 11 E

Abstract: 2SA1451A 2SC3709A
Contextual Info: 2SC3709A TO SHIBA 2SC3709A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SWITCHING APPLICATIONS • • Low Collector Saturation Voltage : V qe (sat)= 0.4V (Max.) High Speed Switching Time : tstg=1.0/¿s (Typ.) Complementary to 2SA1451A

Contextual Info: 2SC3709A TOSHIBA 2SC3709A TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SW ITCHING APPLICATIONS • • INDUSTRIAL APPLICATIONS Unit in mm Low Collector Saturation Voltage : V qe (sat)= 0-4V (Max.) High Speed Switching Time : tstg=1.0(us (Typ.)

C3709A

Contextual Info: 2SC3709A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3709A High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1451A

2SA1451A

Abstract: 2SC3709A
Contextual Info: TO SH IBA 2SC3709A T O S H IB A TRA N SISTO R SILICON NPN E PIT A X IA L T Y PE PCT PROCESS 2SC3709A HIGH C U RREN T SW ITC H IN G A PPLIC A TIO N S IN D U S T R IA L A P P L IC A T IO N S U n it in m m L ow C ollector S a tu r a tio n V o lta g e : Vç!E (sa t) —0 .4 V (M ax.)

C3709A

Abstract: IC1012 C3709 2SA1451A 2SC3709A msa5
Contextual Info: 2SC3709A シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3709A 通 信 工 業 用 ○ 大電流スイッチング用 • 単位: mm コレクタ飽和電圧が低い。: VCE (sat) = 0.4 V (最大) (IC = 6 A) • スイッチング時間が速い。: tstg = 1.0 s (標準)

smd transistor h2a

Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output

Contextual Info: TOSHIBA 2SA1451A T O SH IBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Low Collector Saturation Voltage • V q e (sat)“ —0.4V (Max.) (at Ic = -6A ) High Speed Switching Time : tgtg^l.O^siTyp.)

2SA1451A

Abstract: 2SC3709A
Contextual Info: TO SHIBA 2SA1451A TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1451A INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS Low Collector Saturation Voltage : VCE (sat)= -0 .4 V (Max.) (at I q r = 2 '^ " 0 -6 A )

2SA1451

Abstract: 2SA1451A 2SC3709A
Contextual Info: TO SH IBA 2SA1451A 2 S A 1 451 A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS • • • INDUSTRIAL APPLICATIONS Unit in mm Low Collector Saturation Voltage 10 ±0.3 . , .x— n a \ t t^ , —

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

2SA1451

Abstract: 2SA1451A 2SC3709A
Contextual Info: TO SH IBA 2SA1451A SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 451 A Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS M AXIM UM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

2SA1941 amp circuit

Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
Contextual Info: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including

2sC5200, 2SA1943

Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N
Contextual Info: 製品カタログ 2010-4 東芝半導体 製品カタログ パワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて 機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4

2SA1930 2sc5171

Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
Contextual Info: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228

2SC2625

Abstract: power transistor 2sc2625 datasheet 2SC5000 2SA793 2sc2335 2sc2625 equivalent 2SC1116A 2SC2306 2SC2829 2sb600
Contextual Info: STI Type: 2C5000 Industry Type: 2C5000 V CEO: ICBO ICEX: h FE: IC: V CE: Case Style: STI Type: 2N2453DIE Industry Type: 2C2453 V CEO: 30 ICBO ICEX: h FE: 150 IC: 1.0m V CE: Case Style: STI Type: 2N3807DIE Industry Type: 2C3807 V CEO: 60 ICBO ICEX: h FE: 300

GT45F122

Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

a1451a

Abstract: 2SA1451A 2SC3709A
Contextual Info: 2SA1451A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1451A High-Speed, High-Current Switching Applications • Unit: mm Low collector saturation voltage : VCE (sat) = −0.4 V (max) (IC = −6 A) • High-speed switching: tstg = 1.0 s (typ.)