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C3709A Abstract: 2SA1451A 2SC3709A Contextual Info: C3709A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process C3709A High-Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 s (typ.) • Complementary to 2SA1451A	Original	2sc3709a 2sa1451a c3709a	PDF
C3709A Abstract: 2SA1451A 2SC3709A C3709 Contextual Info: C3709A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process C3709A High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1451A	Original	2sc3709a 2sa1451a c3709a c3709	PDF
C3709A Contextual Info: C3709A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process C3709A High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1451A	Original	2sc3709a 2sa1451a 2-10r1a c3709a	PDF
C3709A Abstract: IC1012 C3709 2SA1451A 2SC3709A msa5 Contextual Info: C3709A シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ C3709A 通信工業用 ○ 大電流スイッチング用 • 単位: mm コレクタ飽和電圧が低い。: VCE (sat) = 0.4 V (最大) (IC = 6 A) • スイッチング時間が速い。: tstg = 1.0 s (標準)	Original	2sc3709a 2sa1451a 2-10r1a c3709a +3ic1012 c3709 msa5	PDF