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    A1451A

    Contextual Info: TOSHIBA 2S A1451A 2 S A 1 451 A TO S H IB A TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS • • • Low Collector Saturation Voltage : VCE (sat)= -0 .4 V (Max.) (at I c = -6 A ) High Speed Switching Time : ts^g= 1 .0/ j s (Typ.)


    OCR Scan     		a1451a2sc3709a PDF

    a1451a

    Abstract: 2SA1451A A1451 2SC3709A
    Contextual Info: A1451A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process A1451A High-Speed, High-Current Switching Applications • Low collector saturation voltage • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SC3709A Unit: mm : VCE (sat) = −0.4 V (max) (IC = −6 A)


    Original     		2sa1451a2sc3709aa1451aa1451 PDF

    A1306 TRANSISTOR

    Abstract: t a1306 A1306A A3206A A1316-A3 A1318 A1309 a1328 A1013 A1300 transistor
    Contextual Info: IEMENS AKTIENGESELLSCHAF 03E J> • -fZ 3 ? - û l ÔB3SbQS DOlSfciBR û BISIEG Leistungstransistoren Power Transistors N-Kanal Anreicherungstypen im Kunststoffgehäuse T0-220 AB N channel enhancement types in plastic package T0-220 AB Typ Type ^DS max fc(max)


    OCR Scan     		o-220t0-220c67078-a1300-a2+16a1329-a2a1301-a2buz11a1301-a3a1330-a3a1331-a2a1306 transistort a1306a1306aa3206aa1316-a3a1318a1309a1328a1013a1300 transistor PDF

    transistor buz 36

    Abstract: A1301 transistor Z346 z309 A3206A A1306A z326 A1320A A1610-A2 Z22A
    Contextual Info: IEMENS AKTIENGESELLSCHAF 03E D • 7 ^ 3*7-0/ ô23StQS QOlSbBS ö « S I E G Leistungstransistoren Power Transistors N-Kanal Anreicherungstypen im Kunststoffgehäuse T0-220 AB N channel enhancem ent types in plastic package TO-220 AB Typ Type ^DS max V A


    OCR Scan     		23stqst0-220o-220buz10s2+13z72alz73alo-218transistor buz 36a1301 transistorz346z309a3206aa1306az326a1320aa1610-a2z22a PDF

    a1451a

    Contextual Info: A1451A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process A1451A High-Speed, High-Current Switching Applications • Low collector saturation voltage • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SC3709A Unit: mm : VCE (sat) = −0.4 V (max) (IC = −6 A)


    Original     		2sa1451a2sc3709a2-10r1aa1451a PDF

    a1451a

    Abstract: 2SA1451A 2SC3709A
    Contextual Info: A1451A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process A1451A High-Speed, High-Current Switching Applications • Unit: mm Low collector saturation voltage : VCE (sat) = −0.4 V (max) (IC = −6 A) • High-speed switching: tstg = 1.0 s (typ.)


    Original     		2sa1451a2sc3709aa1451a PDF