2SC3647 Search Results

2SC3647

Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD 2SC3647 NPN SILICON TRANSISTOR HIGH-VOLTAGE SWITCHING APPLICATIONS FEATURES „ * High breakdown voltage and large current capacity * Fast switching time * Very small size marking it easy to provide high - density, small-sized hybrid ICs

2SC1417

Abstract: d250m
Contextual Info: Ordering number:ENN2006A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1417/2SC3647 High-Voltage Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Ultrasmall size making it easy to provide highdensity, small-sized hybrid ICs.

Contextual Info: Ordering number: EN 2006A 2SA1417/2SC3647 sju y o i PNP/NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Features . Adoption of FBET, MBIT processes. . High breakdown voltage and large current capacity. . Fast switching time. , Very small size making it easy to provide high-density, small-sized hybrid

smd marking cc

Abstract: 2SC3647
Contextual Info: Transistors SMD Type High-Voltage Switching Applications 2SC3647 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage

Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD 2SC3647 NPN SILICON TRANSISTOR HIGH-VOLTAGE SWITCHING APPLICATIONS  FEATURES * High breakdown voltage and large current capacity * Fast switching time * Very small size marking it easy to provide high – density, small-sized hybrid ICs

2SA1417

Abstract: 2SC3647 ITR03542
Contextual Info: 2SA1417 / 2SC3647 注文コード No. N 2 0 0 6 C 三洋半導体データシート 半導体ニューズ No.N2006B とさしかえてください。 2SA1417 / 2SC3647 PNP / NPN エピタキシァルプレーナ型シリコントランジスタ 高耐圧スイッチング用

2SA1417

Abstract: 2SC3647
Contextual Info: 2SA1417 / 2SC3647 Ordering number : EN2006C SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1417 / 2SC3647 High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity.

2SC3647

Abstract: 2SC3647-AB3-R 2SC3647L-AB3-R
Contextual Info: UNISONIC TECHNOLOGIES CO., 2SC3647 NPN EPITAXIAL SILICON TRANSISTOR HIGH-VOLTAGE SWITCHING APPLICATIONS FEATURES 1 * Adoption of FBET, MBIT processes * High breakdown voltage and large current capacity * Fast switching time * Very small size marking it easy to provide high - density,

tda 2038

Abstract: 2SA417 2SA1417 2SC3647
Contextual Info: O rd e rin g n u m b e r: EN 2006A 2SA1417/2SC3647 N o .2006A SA W O PNP/NPN Epitaxial Planar Silicon Transistors i High-Voltage Switching Applications Features . Adoption of FBET, MBIT processes. . Highbreakdown voltage and large current capacity. . Fastswitching time.

2SC1417

Abstract: 2SC3647S-TD-E
Contextual Info: 2SA1417 / 2SC3647 Ordering number : EN2006D SANYO Semiconductors DATA SHEET 2SA1417/2SC3647 Features PNP / NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Adoption of FBET, MBIT processes High breakdown voltage and large current capacity

2SA1417

Abstract: 2SC3647 2006-1
Contextual Info: Ordering number:EN2006A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1417/2SC3647 High-Voltage Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Fast switching time.

Contextual Info: 2SA1417 / 2SC3647 Ordering number : EN2006D SANYO Semiconductors DATA SHEET 2SA1417/2SC3647 PNP / NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity

Contextual Info: 2SA1417 / 2SC3647 Ordering number : EN2006C SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1417 / 2SC3647 High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity.

npn switching transistor Ic 100mA

Abstract: 2SC3647 IC free transistor transistor Ic 1A NPN
Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD 2SC3647 NPN SILICON TRANSISTOR HIGH-VOLTAGE SWITCHING APPLICATIONS „ FEATURES * High breakdown voltage and large current capacity * Fast switching time * Very small size marking it easy to provide high – density, small-sized hybrid ICs

Contextual Info: Ordering number : EN2006D 2SA1417/2SC3647 Bipolar Transistor http://onsemi.com - 100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density small-sized hybrid ICs

Contextual Info: 2SA1417 / 2SC3647 Ordering number : EN2006C SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1417 / 2SC3647 High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity.

2SB1205

Abstract: FX851
Contextual Info: SANYO New Products Of New Package 5/6-pi n XP Seri es :FX type 2 SANYO new 5 /6 -p in XP packages a re in te rm ed ia te sized d e vices between SANYO PCP and TP packages and have high power cap a b ility . This packages lin e in clu d e s complex types of la rg e -c u rre n t sw itchin g t r a n s i s to r s , of a low s a tu ra tio n -v o lta g e t r a n s i s to r ( f a s t

2SD1300

Abstract: transistor 2SB1201 2SA124 transistor 2SD1724 2SB1205
Contextual Info: SANYO TP Tiny Package Transistor Series Our TP (Tiny Package) transistor series are smaller in size as compared with the TO-126,T0-220AB heretofore in use and facilitate high-density mounting that makes it possible to make electronic equipment smaller and slimmer.

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

Contextual Info: Ordering number: EN4905 FX507 N o.4905 N P N E p ita x ia l P la n a r Silicon T ra n sisto r SANYO 1 High-Current Switching Applications A pplications • LCD b ack lig h t drive F eatu res • C om posite type w ith 2 N P N tra n sisto rs contained in one package, fa c ilita tin g hig h -d en sity m ountin g .

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

2SC3647

Abstract: FX507 ITR11412 ITR11413 ITR11414
Contextual Info: 注文コード No. N 4 9 0 5 FX507 No. N4905 O3000 FX507 NPN エピタキシァルプレーナ形シリコントランジスタ 大電流スイッチング用 用途 ・液晶バックライトドライブ用。 特長 ・NPN トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。

TO-32-070

Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Contextual Info: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)