ITR03542 Search Results
ITR03542 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
2SC1417
Abstract: d250m
|
Original |
ENN2006A 2SA1417/2SC3647 2SA1417/2SC3647] 25max 2SA1417 2SC1417 d250m | |
2SA1417
Abstract: 2SC3647 ITR03542
|
Original |
2SA1417 2SC3647 N2006B 2SA1417 250mm2 100mA 2SC3647 ITR03542 | |
2SA1417
Abstract: 2SC3647
|
Original |
2SA1417 2SC3647 EN2006C 2SA1417 2SC3647 | |
2SC1417
Abstract: 2SC3647S-TD-E
|
Original |
EN2006D 2SA1417 2SC3647 2SA1417/2SC3647 2SA1417 250mm2 2SC1417 2SC3647S-TD-E | |
Contextual Info: 2SA1417 / 2SC3647 Ordering number : EN2006D SANYO Semiconductors DATA SHEET 2SA1417/2SC3647 PNP / NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity |
Original |
2SA1417 2SC3647 EN2006D 2SA1417/2SC3647 2SA1417 | |
Contextual Info: 2SA1417 / 2SC3647 Ordering number : EN2006C SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1417 / 2SC3647 High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. |
Original |
2SA1417 2SC3647 EN2006C 2SA1417 | |
Contextual Info: 2SA1417 / 2SC3647 Ordering number : EN2006C PNP / NPN Epitaxial Planar Silicon Transistors 2SA1417 / 2SC3647 High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Ultrasmall size making it easy to provide high-density small-sized hybrid ICs. |
Original |
2SA1417 2SC3647 EN2006C 2SA1417 | |
Contextual Info: Ordering number : EN2006D 2SA1417/2SC3647 Bipolar Transistor http://onsemi.com - 100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density small-sized hybrid ICs |
Original |
EN2006D 2SA1417/2SC3647 2SA1417 250mm2 | |
Contextual Info: 2SA1417 / 2SC3647 Ordering number : EN2006C SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1417 / 2SC3647 High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. |
Original |
2SA1417 2SC3647 EN2006C 2SA1417 |