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    ITR03542 Search Results

    ITR03542 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SC1417

    Abstract: d250m
    Contextual Info: Ordering number:ENN2006A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1417/2SC3647 High-Voltage Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Ultrasmall size making it easy to provide highdensity, small-sized hybrid ICs.


    Original
    enn2006a2sa1417/2sc364725max2sa1417+22sc1417d250m PDF

    2SA1417

    Abstract: 2SC3647 ITR03542
    Contextual Info: 2SA1417 / 2SC3647 注文コード No. N 2 0 0 6 C 三洋半導体データシート 半導体ニューズ No.N2006B とさしかえてください。 2SA1417 / 2SC3647 PNP / NPN エピタキシァルプレーナ型シリコントランジスタ 高耐圧スイッチング用


    Original
    2sa14172sc3647n2006b250mm2+2100maitr03542 PDF

    2SA1417

    Abstract: 2SC3647
    Contextual Info: 2SA1417 / 2SC3647 Ordering number : EN2006C SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1417 / 2SC3647 High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity.


    Original
    2sa14172sc3647en2006c PDF

    2SC1417

    Abstract: 2SC3647S-TD-E
    Contextual Info: 2SA1417 / 2SC3647 Ordering number : EN2006D SANYO Semiconductors DATA SHEET 2SA1417/2SC3647 Features PNP / NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Adoption of FBET, MBIT processes High breakdown voltage and large current capacity


    Original
    en2006d2sa14172sc36472sa1417/2sc3647+3250mm22sc14172sc3647s-td-e PDF

    Contextual Info: 2SA1417 / 2SC3647 Ordering number : EN2006D SANYO Semiconductors DATA SHEET 2SA1417/2SC3647 PNP / NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity


    Original
    2sa14172sc3647en2006d2sa1417/2sc3647 PDF

    Contextual Info: 2SA1417 / 2SC3647 Ordering number : EN2006C SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1417 / 2SC3647 High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity.


    Original
    2sa14172sc3647en2006c PDF

    Contextual Info: 2SA1417 / 2SC3647 Ordering number : EN2006C PNP / NPN Epitaxial Planar Silicon Transistors 2SA1417 / 2SC3647 High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Ultrasmall size making it easy to provide high-density small-sized hybrid ICs.


    Original
    2sa14172sc3647en2006c PDF

    Contextual Info: Ordering number : EN2006D 2SA1417/2SC3647 Bipolar Transistor http://onsemi.com - 100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density small-sized hybrid ICs


    Original
    en2006d2sa1417/2sc36472sa1417250mm2 PDF

    Contextual Info: 2SA1417 / 2SC3647 Ordering number : EN2006C SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1417 / 2SC3647 High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity.


    Original
    2sa14172sc3647en2006c PDF