2SC132 Search Results

2SC1325

Contextual Info: Inchange Semiconductor Product Specification 2SC1325 Silicon NPN Power Transistors • DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·Designed for use in large screen color deflection circuits PINNING see fig.2 PIN DESCRIPTION 1

2SC1324

Abstract: 470M
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1324 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC 1324 is a silicon NPN epitaxial planar type transistor designed D im e n s io n s in m m fo r industrial use RF broadband amplifiers from V H F to UHF band.

IC LM 324

Abstract: 2sc1327 2SC1328 Lm 324 ic 2SC1328 U T 2SA721 2SA722 2SC1328 U
Contextual Info: 2 S C 1 3 2 7, 2 SC 1328 2SC1327, 2SC1328 NPN + T V — H S / S i NPN Epitaxial Planar ii'llffl./A F Low Noise Pre-Amplifier ^ /F e a tu re s • sS eTWEE NV „ / L o w noise voltage • hFE ; ^ ; * : ^ 0/H igh hFE • PN P S o 2SA721. 2SA722 II Absolute Maximum Ratings Ta=25°C

Contextual Info: 2SC1323 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)16 V(BR)CBO (V)30 I(C) Max. (A)500m Absolute Max. Power Diss. (W)5.0 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A)50uØ @V(CBO) (V) (Test Condition)

PE109b

Abstract: 2SC654 50N15 2SC944 2SC1327 10K180 to-118 BF274 PMBT4401 PE109
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 BF216 PE109B PE109C BF218 BF217 2N3512 2N2787 2N2790 2N5417 BSS81B 2N2792 2N2788 2N2791 HSE135 BSS81C UPI4046 UP14046-46 2N2789 2N2789S 2 2N2789S 2SC1327 BF219 BF220 PTC101

Contextual Info: 2SC1329 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)50 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)58 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0mØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.20 h(FE) Max. Current gain.

2sa722

Abstract: 2SA721 2Sc1327 2SC1328
Contextual Info: 2SA721, 2SA722 2SA721, 2SA722 PNP H ïï/ S i PNP Epitaxial Planar Low Noise Pre-Amplifier 4# Sfc/Features N V ¿ ' g V 'o / L o w noise voltage • ¡ S S M i f 1 1 $ hFE ¿ 5 * ^ „ / H i g h hFE t> i • N P N M 2SC1327, 2SC1328 4 * U nit : mm 4. lmax.

2SC137

Abstract: 2SC306 2SC138 2sc230 2SC458LG C 2SC130 2SC387AGTM 2SC238 2SC309 2SC132
Contextual Info: - 96 - m % T a = 2 5 ^ , * E P Í á T c = 2 5 eC M S 2SC27 € ffl & VcBO VcEO Ice DC) Pc Pc* (V) (V) (A) (W) (W) s± ii HF A 2SC130 S± ii HF A 60 1 1.8 2SC131 ܱ Ü HS SW 40 0.3 0. 35 2SC132 ä± ü HS SW 20 0.3 0.35 2SC134 S± ü HS SW 40 0.3 2SC135

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1324 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1324 is a silicon NPN epitaxial planar type transistor designed for industrial use RF broadband amplifiers from VHF to UHF band. D im ensions in mm FEATURES •

2SC1324

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1324 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1324 is a silicon NPN epitaxial planar type transistor designed for industrial use RF broadband amplifiers from VHF to UHF band. Dim ensions in mm FEATURES •

Contextual Info: 2SC1328 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)55 V(BR)CBO (V)55 I(C) Max. (A)100m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k h(FE) Max. Current gain.

Contextual Info: Qs.iisy <£fLmi-Conciuctoi '[P'loducti., Una. 20 STERN AVE, SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1324 is a silicon NPN epitaxial planar type transistor designed

2SC1325A

Contextual Info: NEC SILICON POWER TRANSISTOR QfCTRQN DEVICE 2SC1325A HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV NPN SILICON TRIPLE DIFFUSED MESA TRANSISTOR PACKAGE DIMENSIONS Unit : mm • Suitable fo r ho rizonta l de flection o u tp u t applications o f 20 1 10 °color T V receivers.

2SC1321

Contextual Info: 2SC1321 UHF Amplifier NPN Silicon Epitaxial Transistor • L o w Noise Figure: N F = 5.0dB T Y P . f= 9 0 0 M H z • High Gain B a n dw id th P ro du ct: f-j- - 9 0 0 M H z TY P . A B S O L U T E M A X IM U M R A T IN G S M axim um Voltages and C urre n t (Ta = 25°C)

Contextual Info: 2SC1326 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)55 I(C) Max. (A)400m Absolute Max. Power Diss. (W)5.0 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20uØ° @V(CBO) (V) (Test Condition)

HPA C band

Contextual Info: • 15V Series for C A TV /M A T V Amplifiers <Tc = 25’C> Max. ratines Type No. Application HPA 2SC1324 Structur# Si,NPN,EP > fa {A} Pc W 35 4.0 0.15 3 A + 175 (ài (min) .{Hh-c leao w UA) Sf f (MHz) •c (mA) dB 50 50 15 770 0.03 9 Wm Package outline

2sc1424

Abstract: SC-5-1 2SC1457 2SC1507 2SC1324 2SC1336 2SC1345K 2SC1326 2SC1449 2SC1318A
Contextual Info: - 104 - m% * * Æ Î § Ta=25tC, ♦ EP(iTc=25‘C fi -t¡ m toi . *^fSU (V) 2SC1318A 2SC1324 2SC1326 2SC1336 2SC1342 2SC1343H 2SC1344 2SC1345 2SC1345K 2SC1359 2SC1360 2SC1360A 2SC1383 2SC1384 2SC1387 2SC1393 2SC1394 2SC1398 2SC1398A 2SC1413 2SC1413A 2SC1413AH

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SC1222

Abstract: TO-92B 2SC1000 2SC1330 2SC923 2SC1328 2SC1327 2SC1213A 2SC1675 2SC858
Contextual Info: NO. UJ Li. X TYPE P O LA R ITY Low Level and General Purpose Amplifiers MAXIMUM RATINGS CASE Pd mW 'c (mA) V CEO (V) V CE(SAT) 'c min max (mA) VCE (V) max 'c (V) (mA) Cob N.F. max max (MHz) (pF) (dB) 4 20 15 10 fT min 2SC858 2SC900 2SC923 2SC945 2SC1000

2N5036

Abstract: TRANSISTOR BV 32 2N5035 2N5034 FZJ 101 usaf516es047m 2N5034 package 2N5425 B170000 fzj 165
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

2N5036

Abstract: A1381 transistor 2N5034 2N5035 156-043 2SD323 2N5034 package B170000 B170001 S8002
Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GE RMANIUM P N P 1 9 G ER M AN IU M N P N 1 10. SILICON PN P 1 1 . SILICON NPN LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable