2SB647A Search Results

2Sb647a

Abstract: 2sb647
Contextual Info: 2SB647 / 2SB647A PNP General Purpose Transistors P b Lead Pb -Free 2 1 3 1 2 3 1.EMITTER 3.BASE 2.COLLECTOR TO-92MOD MAXIMUM RATINGS(Ta=25°C) Symbol Value Unit Collector-Emitter Voltage VCEO 80 V Collector-Base Voltage VCBO 120 V Emitter-Base Voltage VEBO

2SB647C

Abstract: 2SB647 2SB647AC 2SB647A
Contextual Info: 2SB647, 2SB647A Silicon PNP Epitaxial REJ03G0648-0200 Previous ADE-208-1025 Rev.2.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SD667/A Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 1. Emitter

2SB647AC

Abstract: 2SB647C 2SB647DTZ-E 2SB647 2SB647A 2SB647A equivalent 2SB647CTZ-E PRSS0003DC-A
Contextual Info: 2SB647, 2SB647A Silicon PNP Epitaxial REJ03G0648-0200 Previous ADE-208-1025 Rev.2.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SD667/A Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 1. Emitter

2SD667A

Abstract: 2SD667AC
Contextual Info: 2SD667A 1A , 120V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92MOD FEATURES   Low Frequency Power Amplifier Complementary Pair with 2SB647A A D B K E CLASSIFICATION OF hFE 1

2SB647

Abstract: 2SB647A 2SB647A equivalent
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SB647/2SB647A TO-92MOD TRANSISTOR PNP FEATURE Power dissipation PCM: 1. EMITTER 2. COLLECTOR 0.9 W (Tamb=25℃) Collector current -1 A ICM: Collector-base voltage

SB647

Abstract: 647A
Contextual Info: H ITACH I 2SB647, 2SB647A SILICON PNP EPITAXIAL LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD667/A JL I 710 1 Hmmcr 2 C o i k c io r y Dinotasi «* io mm> (JEDEC TO-92 MOD. I ABSOLUTE MAXIMUM RATINGS <Ta=25*C) Item 2SB 647 S y m b o l^ MAXIMUM COLLECTOR DISSIPATION

2sb647

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SB647/2SB647A ＴＯ－９２ＭＯＤ TRANSISTOR（ PNP ） FEATURE Power dissipation PCM : 0.9 W（Tamb=25℃） Collector current ICM: -1 A Collector-base voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SB647/2SB647A TO-92MOD TRANSISTOR PNP FEATURE Power dissipation PCM: 1. EMITTER 2. COLLECTOR 0.9 W (Tamb=25℃) Collector current ICM: -1 A Collector-base voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SB647/2SB647A TO – 92M TO – 92MOD TRANSISTOR PNP 1. COLLECTOR 1. EMITTER 2. BASE FEATURES z Low Frequency Power Amplifier z Complementary Pair with 2SD667/A

2SB647

Abstract: 2SB647A equivalent transistor 2sd667 2SB647A To-92mod Hitachi DSA00335 2SD667A
Contextual Info: 2SB647, 2SB647A Silicon PNP Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SD667/A Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SB647, 2SB647A Absolute Maximum Ratings Ta = 25°C Item Symbol 2SB647 2SB647A

2SB647

Abstract: Hitachi DSA0076 2SB647A equivalent 2SB647A
Contextual Info: 2SB647, 2SB647A Silicon PNP Epitaxial ADE-208-1025 Z 1st. Edition Mar. 2001 Application • Low frequency power amplifier • Complementary pair with 2SD667/A Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SB647, 2SB647A Absolute Maximum Ratings (Ta = 25°C)

2sb647

Abstract: 2sd667 2sb647 2SB647A Hitachi DSA002754
Contextual Info: 2SB647, 2SB647A Silicon PNP Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SD667/A Outline 2SB647, 2SB647A Absolute Maximum Ratings Ta = 25°C Item Symbol 2SB647 2SB647A Unit Collector to base voltage VCBO –120 –120

2SD667AC

Contextual Info: 2SD667A 1A , 120V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92MOD FEATURES Low Frequency Power Amplifier Complementary Pair with 2SB647A A D B K E CLASSIFICATION OF hFE 1

B647A

Abstract: 2SB647A 2sd667 2sb647 2S8647 B647 2SB647 D667
Contextual Info: HITACHI 2SB647, 2SB647A SILICON PNP EPITAXIAL LOW FREQ UEN CY PO W ER AMPLIFIER Complementary pair with 2SD667/A io 1. Emitter 2. C o lle iiö f 3 Bast [Dimcntions in mm A BSO LU T E MAXIMUM RATINGS Ta=25°C) Item 2SB647 Symbol MAXIMUM COLLECTOR DISSIPATION

2SB647A

Contextual Info: 2SB647A -1A , -120V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92MOD FEATURES   Power Amplifier Applications . Low Frequency Power Amplifier A D B CLASSIFICATION OF hFE

Contextual Info: 2SB647A -1A , -120V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92MOD FEATURES Power Amplifier Applications . Low Frequency Power Amplifier A D B CLASSIFICATION OF hFE

2SB647

Abstract: 2SB647A 2sB647 transistor
Contextual Info: Transys Electronics L I M I T E D TO-92MOD Plastic-Encapsulated Transistors 2SB647/2SB647A TO-92MOD TRANSISTOR PNP FEATURE Power dissipation PCM: 1. EMITTER 2. COLLECTOR 0.9 W (Tamb=25℃) Collector current -1 A ICM: Collector-base voltage 120 V V(BR)CBO:

2sb647

Abstract: 2sb647ac 2SB647A i251
Contextual Info: 2SB647,2SB647A Silicon PNP Epitaxial HITACHI Application • Low frequency power amplifier • Complementary pair with 2SD 667/A Outline TO-92M OD 1. Emitter 2. Collector 3. Base 203 2SB647, 2SB647A Absolute Maximum Ratings T a = 2 5 ° C item Symbol 2SB647

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SD588

Abstract: 2SB651 2SB669A 2SB618A 2SB641 2SB615 2Sb669 2SD588A 2SB618 2SB616 2SD586
Contextual Info: Absolutes maximum ratings Ta=25ºC DC Current Gain fab/ft* Cob ºñ°í hFE VCE Ic (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 30W 2000-5A 150 -2 -3A 2SD560 (Tc=25ºC) 15000 -500 800 175 >50 -5 -100 30W -4A 150 120 -5 -500 (Tc=25ºC) -700 800 150 200 -1 -100 120*

MMS8050-L

Abstract: 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664
Contextual Info: TM Micro Commercial Components SMALL SIGNAL&POWER TRANSISTORS MCC Part Number VCEO V IC (A) hFE @ VCE & IC VCE(sat) & VBE(sat) @ IC & IB hFE hFE VCE IC Min. Max. (V) (mA) VCE(sat) VBE(sat) Max.(V) Max.(V) fT @ VCE & IC Polarity IC IB fT Min. TPY. fT Max.

secos gmbh

Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers

2SB694H

Abstract: 2sd717 2SD689 2SD668A 2SB646 2sb678 2SB686 2SD663 2SD666 2SD706
Contextual Info: - 222 - Ta=25'C, * E(](ÎTc=25<C M £ ít rrj £ ¿2! «CEu (V) 2SD661 fâT LF LN A 2SD661A tëT tôT LF LN A 2SD662 2SD662B 2SD663 2SD666 2SD666A 2SD667 2SD667A 2SD668 2SD668A fôT m ±nm ai B aL ai Hi hä B5: 2SD670H BÎL HÎL BÍL ZÒUOM i l i 2SD669

2sb647

Contextual Info: MCC TM Micro Commercial Components 2SB647 A -B 2SB647(A)-C 2SB647-D
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • • Epoxy meets UL 94 V-0 flammability rating