2SA885 Search Results

2sc1846

Abstract: 2SA885
Contextual Info: SavantIC Semiconductor Product Specification 2SC1846 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SA885 ·Low collector saturation APPLICATIONS ·For medium output power amplification PINNING PIN DESCRIPTION 1 Emitter

2sc1846

Abstract: 2SA0885 2SA885
Contextual Info: Power Transistors 2SA0885 2SA885 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SC1846 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings TC = 25°C Parameter 0.75±0.1 Symbol Rating Unit Collector to base voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA0885 (2SA885) Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency power amplification Complementary to 2SC1846 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA0885 (2SA885) Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency power amplification Complementary to 2SC1846 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C

2sc1846

Abstract: 2SA0885 2SA885
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA0885 (2SA885) Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency power amplification Complementary to 2SC1846 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C

2sc1846

Abstract: z2v7 2SA885
Contextual Info: PANASONIC INDL/ELEK-CSEMI} 7EC D | f - n DDDÛ7Î.5 □ * 2SA885 2SA885 '> ij =1 y P N P x fcf£ Si P N P E p ita x ia l P la n a r f f c tÜ ^ W ^ it tÎ S f f l/ M e d i u m P o w e r A m p lifie r 2SC 1846 ¿ 3 ' / ^ ' j / C o m p l e m e n t a r y P a ir w ith

2SA885

Abstract: 2sc1846
Contextual Info: SavantIC Semiconductor Product Specification 2SA885 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SC1846 ·Low collector-emitter saturation voltage APPLICATIONS ·For low-frequency power amplification PINNING PIN DESCRIPTION

2sc1846

Abstract: 2SA0885 2SA885
Contextual Info: Power Transistors 2SA0885 2SA885 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SC1846 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings TC = 25°C Parameter 0.75±0.1 Symbol Rating Unit Collector to base voltage

2SA885

Abstract: 2SC1398 2sc1846
Contextual Info: Power Transistors 2SA885 2SA885 Silicon PNP Epitaxial Planar Type Package Dim ensions AF Output Drivers C om plem entary P air with 2 S C 1 8 4 6 • Features • 3W output in com plem entary pair with 2SC1398 • TO-126 package, no insulator needed when fixing to a heat sink

2SA885

Abstract: 2sc1846
Contextual Info: Power Transistors 2SG1846 2SC1846 Silicon NPN Epitaxial Planar Type Package Dim ensions Medium Power Amplifier Com plem entary Pair with 2SA885 • Features • Low c o lle c to r-e m itte r sa tu ra tio n v o lta g e VcEtsati • 3W o u tp u t in c o m p le m e n ta ry p air w ith 2SA 885

2sc1846

Abstract: 2SA885
Contextual Info: JMnic Product Specification 2SC1846 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SA885 ・Low collector saturation APPLICATIONS ・For medium output power amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

2SA885

Abstract: 2SC1846
Contextual Info: AOK AOK Semiconductor Product Specification 2SA885 S ilicon PNP Power Transistors DESCRIPTION • With TO -126 package • Complement to type 2SC1846 • Low collector-emitter saturation voltage APPLICATIONS • For low-frequency power amplification PINNING

2SC1398

Abstract: 2sc1846 2SA885 170R1
Contextual Info: Power T ransistors 2SA885 2SA885 Silicon PNP Epitaxial Planar Type Package Dim ensions AF O utput Drivers C o m plem entary Pair with 2 S C 1 8 4 6 • Features • 3W output in com plem en tary pair with 2 S C 1 3 9 8 • T O -1 2 6 p ack age , no in su lato r n ee d ed w hen fixing to a h eat sink

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA0885 (2SA885) Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency power amplification Complementary to 2SC1846 3.2±0.2 Symbol 0.75±0.1 Rating 4.6±0.2

2sc1846

Abstract: 2SC1846 equivalent 2SA885 85170
Contextual Info: Inchange Semiconductor Product Specification 2SC1846 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SA885 ・Low collector saturation APPLICATIONS ・For medium output power amplification PINNING PIN DESCRIPTION

2sc1846

Abstract: 2SC1846 equivalent 2SA885
Contextual Info: Inchange Semiconductor Product Specification 2SA885 Silicon PNP Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SC1846 ·Low collector-emitter saturation voltage APPLICATIONS ·For low-frequency power amplification PINNING PIN

2sa899

Abstract: 2SC1904 2SA904A 2SA933LN 2sc2673 2SA898 2SA887 2SA881 2SA93 2sc1846
Contextual Info: - 16 - Ta=25£C, *EP(âTc=25t M 2SA847A 2SA854 2SA854S 2SA872 2SA872A 2SA874 2SA874M 2SA879 2SA881 2SA885 2SA8S6 2SA887 2SA893 2SA893A 2SA898 2SA899 2SA900 2SA904A 2SA913 2SA913A 2SA914 2SA915 2SA916 2SA921 2SA929 2SA930 2SA933 2SA933LN 2SA 933S 2SA933SU

2sc1846

Contextual Info: Power Transistors 2SC1846 2SC1846 Silicon NPN Epitaxial Planar Type • Package Dimensions Medium Power Amplifier Complementary Pair with 2SA885 ■Features • Low c o lle c to r -e m itte r sa tu ra tio n v o lta g e V cb <i «> • 3W output in co m p le m e n ta ry pair w ith 2 S A 8 8 5

2SA885

Abstract: 2sc1846 Jmnic
Contextual Info: JMnic Product Specification 2SA885 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SC1846 ・Low collector-emitter saturation voltage APPLICATIONS ・For low-frequency power amplification PINNING PIN DESCRIPTION

2sc1846

Abstract: 2SA0885 2SA885
Contextual Info: Power Transistors 2SA0885 2SA885 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency power amplification Complementary to 2SC1846 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol 1.9±0.1 0.75±0.1 Rating 4.6±0.2

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

2SA899

Abstract: 2SC1903 2SC1792 2sc1855 2-13B1A 2SC1815L 2SA1015L 2SC1840 2SA991 2sc1846
Contextual Info: - no Ta=25‘ C, *EfJíáTc=25‘ C} •WTX -a m -Çt -Él iè m VCBO Vc e o IC(DC Pc Pc* (V) (V) (A) (W) (W) IcBO (max) (a a ) VcB (V) ñ (min) hFE ft & (max) fé Vc e (V) (13=25^) ïc/ OHHàtypfc] (max) (V) I e (A) (V) le (A) Ib (A) 2SC1763 30MHz PA 65

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable