2SA0885 Search Results
2SA0885 Datasheets (13)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 2SA0885 | Panasonic | Silicon PNP epitaxial planar type | Original | 90.97KB | 4 | ||
| 2SA0885 | Panasonic | Silicon PNP epitaxial planar type | Original | 89.05KB | 4 | ||
| 2SA0885 | Panasonic | Power Transistors | Original | 66.6KB | 4 | ||
| 2SA08850R | Panasonic | Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP HF 35VCEO 1A TO-126 | Original | 4 | |||
| 2SA0885Q | Panasonic | Silicon PNP Epitaxial Planar Type Power Transistor | Original | 90.98KB | 4 | ||
| 2SA0885Q | Panasonic | TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 1A I(C) | TO-126 | Original | 66.58KB | 4 | ||
| 2SA0885-Q | Panasonic | TRANS GP BJT PNP 35V 1A 3TO-126B-A1 | Original | 90.98KB | 4 | ||
| 2SA0885R | Panasonic | TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 1A I(C) | TO-126 | Original | 66.58KB | 4 | ||
| 2SA0885R | Panasonic | Silicon PNP Epitaxial Planar Type Power Transistor | Original | 90.98KB | 4 | ||
| 2SA0885-R | Panasonic | TRANS GP BJT PNP 35V 1A 3TO-126B-A1 | Original | 90.98KB | 4 | ||
| 2SA0885S | Panasonic | TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 1A I(C) | TO-126 | Original | 66.59KB | 4 | ||
| 2SA0885S | Panasonic | Silicon PNP Epitaxial Planar Type Power Transistor | Original | 90.98KB | 4 | ||
| 2SA0885-S | Panasonic | TRANS GP BJT PNP 35V 1A 3TO-126B-A1 | Original | 90.98KB | 4 |
2SA0885 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
2sc1846
Abstract: 2SA0885
|
Original |
2002/95/ec2sc18462sa0885o-126b-a1 | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC1846 Silicon NPN epitaxial planar type For medium output power amplification Complementary to 2SA0885 Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C |
Original |
2002/95/ec2sc18462sa0885 | |
2SC1846Contextual Info: Power Transistors 2SC1846 Silicon NPN epitaxial planar type Unit: mm For midium output power amplification Complementary to 2SA0885 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 0.75±0.1 • Absolute Maximum Ratings TC = 25°C 0.5±0.1 0.5±0.1 4.6±0.2 Parameter Symbol |
Original |
2sc18462sa0885o-126b200mhz | |
|
Contextual Info: Power Transistors 2SA0885 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SC1846 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings TC = 25°C Parameter 0.75±0.1 Symbol Rating Unit Collector to base voltage |
Original |
2sa08852sc1846o-126b200mhz | |
2sc1846
Abstract: 2SA0885 2SC1846 data
|
Original |
2sc18462sa0885o-126b2sc1846 data | |
2sc1846
Abstract: 2SA0885 2SA885
|
Original |
2sa08852sa8852sc1846o-126b | |
|
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA0885 (2SA885) Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency power amplification Complementary to 2SC1846 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C |
Original |
2002/95/ec2sa08852sa8852sc1846+1 | |
|
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA0885 (2SA885) Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency power amplification Complementary to 2SC1846 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C |
Original |
2002/95/ec2sa08852sa8852sc1846+1 | |
2sc1846
Abstract: 2SA0885 2SA885
|
Original |
2002/95/ec2sa08852sa8852sc1846+1 | |
2sc1846
Abstract: 2SA0885 2SA885
|
Original |
2sa08852sa8852sc1846o-126b | |
|
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA0885 (2SA885) Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency power amplification Complementary to 2SC1846 3.2±0.2 Symbol 0.75±0.1 Rating 4.6±0.2 |
Original |
2002/95/ec2sa08852sa8852sc1846 | |
2sc1846
Abstract: 2SC1846 data 2SA0885 2SA885
|
Original |
2sc18462sa08852sa885o-126b+1 | |
TO-126B-A1
Abstract: 2sc1846 2SA0885
|
Original |
2002/95/ec2sc18462sa0885o-126b-a1+1 | |
|
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC1846 Silicon NPN epitaxial planar type For medium output power amplification Complementary to 2SA0885 Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C |
Original |
2002/95/ec2sc18462sa0885 | |
|
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2sc1846
Abstract: 2SA0885 2SA885
|
Original |
2sa08852sa8852sc1846o-126b-a1 | |
2sc1846
Abstract: 2SA0885
|
Original |
2sc18462sa0885o-126b-a1 | |
vogt w6
Abstract: vogt w5 VOGT w7 switching transformer vogt w4 EEL25 2N3906_D26Z HT9V03050 vogt switching transformer ep3290 2N3904_D26Z
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Original |
ep-32op245pepr-3213-jul-06+13 | |
2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
|
Original |
responsibilixp08081xp08546xp0a554xp0d873+13 | |
K 2411
Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
|
OCR Scan |
3sk241t0220fk 2411k2411+8 | |
2SB0774
Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
|
OCR Scan |
o-1262sc22582sc30632sc5340+10 | |
A1534
Abstract: T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A
|
OCR Scan |
t0-92t092lt0220ft0220+10 | |
2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
|
Original |
xp06501txp06531xp06545xp0a554+13 | |
transistor SMD 13t
Abstract: china DVD schematic TOP242-250 TL431 928 laptop ic list 13t smd schematic atx 160 W transformer ATX Stacked Winding flyback 13t smd transistor DI-66
|
Original |
pi-2632-060200transistor smd 13tchina dvd schematictop242-250+7 | |
6 PIN SMD CHIP 13t
Abstract: 1N3906 zener smd 4T PI-2632-060200 EEL25 transistor SMD 13t TOP246P atx flyback transformer DI35 switching transformer atx
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Original |
pi-2632-060200op246po-220/26t6 pin smd chip 13t+8 | |