2SA743
Abstract: 2SA743A WS50
Contextual Info: AOK AOK Semiconductor P ro d u c t S p ecificatio n 2SA743 2SA743A Silicon PNP Pow er Transistors DESCRIPTION • With TO-126 package • Complement to type 2SC1212/1212A APPLICATIONS • For low frequency power amplifier applications P IN N IN G PIN D E S C R IP TIO N
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2sa7432sa743ao-1262sc1212/1212a+1ws50
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Contextual Info: 2SA743, 2SA743A Silicon PNP Epitaxial HITACHI Apr. 13, 1998 Application Low frequency power amplifier complementary pair with 2SC1212 and 2SC1212A Outline TO-126 MOD I ^2 3 1. Em itter 2. Collector 3. Base 2SA 743, 2SA 743A Absolute Maximum Ratings Ta = 25 °C
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2sa7432sa743a2sc12122sc1212a+1o-126
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Ge 2sa
Abstract: 2SA743A A743A 2SA743
Contextual Info: 2SA743, 2SA743A Silicon PNP Epitaxial HITACHI Apr. 13, 1998 Application Low frequency power amplifier complementary pair with 2SC1212 and 2SC1212A Outline T O -1 2 6 M O D I 12 1. Emitter 2. Collector 3. Base 2SA 743, 2S A 743A Absolute Maximum Ratings Ta = 25 °C
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2sa7432sa743a2sc12122sc1212a+2ge 2saa743a
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Hitachi DSA001650
Abstract: 2SA743A 2SA743
Contextual Info: 2SA743, 2SA743A Silicon PNP Epitaxial Apr. 13, 1998 Application Low frequency power amplifier complementary pair with 2SC1212 and 2SC1212A Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 2SA743, 2SA743A Absolute Maximum Ratings Ta = 25°C Ratings
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2sa7432sa743a2sc12122sc1212a+3o-126d-85622hitachi dsa001650
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2SA743A
Abstract: 2SC1212A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA743A DESCRIPTION •Good Linearity of hFE ·High Collector-Emitter Breakdown VoltageV BR CEO= -80V (Min) ·Complement to Type 2SC1212A APPLICATIONS ·Designed for use in low frequency power amplifier
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2sa743a2sc1212a-10ma-50ma+1-30ma
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2SA743A
Abstract: 2SC1212A 2SA743
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA743A DESCRIPTION •Good Linearity of hFE ·High Collector-Emitter Breakdown VoltageV BR CEO= -80V (Min) ·Complement to Type 2SC1212A APPLICATIONS ·Designed for use in low frequency power amplifier
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2sa743a2sc1212a-10ma-50ma+2-30ma2sa743
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2SA743A
Abstract: Hitachi DSA002788 2SA743
Contextual Info: 2SA743, 2SA743A Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SC1212 and 2SC1212A Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings Ta = 25°C Ratings Item Symbol 2SA743 2SA743A Unit
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2sa7432sa743a2sc12122sc1212a+2o-126hitachi dsa002788
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Contextual Info: <zbs.mi-L.onau.ctoi i-Pioaucti, One. LS 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA743A Silicon PNP Power Transistor DESCRIPTION • Good Linearity of hFE • High Collector-Emitter Breakdown VoltageV(BR)CEo= -80V (Min)
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2sa743a2sc1212ao-126-10ma+2-50ma-30ma
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2SA743
Abstract: 2SA743A 2SC1212 2SC1212A
Contextual Info: 2SA743, 2SA743A Silicon PNP Epitaxial Low Frequency Power Amplifier Complementary Pair with 2SC1212 and 2SC1212A Absolute Maximum Ratings Ta = 25°C Item TO-126 MOD Symbol 2SA743 2SA743A Unit ————————————————————–
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2sa7432sa743a2sc12122sc1212a+1o-126
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2SA743
Abstract: 2SA743A 2SC1212A 2SC1212 DSA003644 Hitachi 2SA
Contextual Info: 2SA743, 2SA743A Silicon PNP Epitaxial ADE-208-853 Z 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary pair with 2SC1212 and 2SC1212A Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings (Ta = 25°C)
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2sa7432sa743aade-208-8532sc1212+42sc1212ao-126dsa003644hitachi 2sa
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2SA743A
Abstract: 2SA743
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA743 2SA743A DESCRIPTION •With TO-126 package ·Complement to type 2SC1212/1212A APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2
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2sa7432sa743ao-1262sc1212/1212a+1-50ma
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2SA743
Abstract: 2SA743A 2SC1212A 2SC1212 DSA003762 Hitachi 2SA
Contextual Info: 2SA743, 2SA743A Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SC1212 and 2SC1212A Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings Ta = 25°C Ratings Item Symbol 2SA743 2SA743A Unit
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2SA743A
Abstract: 2SA743 2SA743-A
Contextual Info: JMnic Product Specification 2SA743 2SA743A Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SC1212/1212A APPLICATIONS ・For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to
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2sa7432sa743ao-1262sc1212/1212a+2-50ma2sa743-a
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2SA743
Abstract: Hitachi 2SA 2SA743A Hitachi DSA002754
Contextual Info: 2SA743, 2SA743A Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SC1212 and 2SC1212A Outline Absolute Maximum Ratings Ta = 25°C Ratings Item Symbol 2SA743 2SA743A Unit Collector to base voltage VCBO –50 –80 V
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2sa7432sa743a2sc12122sc1212a+2hitachi 2sahitachi dsa002754
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2SA798
Abstract: 2SA733 2SA785 2SA778AK 2sc1567 2SA800 2SC1398 2SA720A 2SA798 g 2SA743
Contextual Info: 14 - m % T a = 2 5 cC , * E P Í Í T c = 2 5 ‘ ü m 2SA719 & tt fóT 2SA720 2SA720A fâT 2SA732 m M £ & VcBO VcEO (V) (V) Ici D C) Pc Pc* (W) (W) \M ld A / (A) 340 -10 -0.15 -0.6 -1. 5 -0.3 -0.03 85 340 -10 -0.15 -0.6 -1. 5 -0.3 -0.03 -10 40 200 -10
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2sa7192sa720a2sa7322sa733+132sa8062sc1622a2sa811a2sc1623sc-592sa7982sa7852sa778ak2sc15672sa8002sc13982sa798 g2sa743
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2SC1202
Abstract: 2sc1203 2sc1201 2sc1225 2SC1294 2SC1237 2SC1239 2sc1234 2SC1247A 2sc1204
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc (V) (V) (mA) (mW) 2SC1201 2SC1202 2SC1203 2SC1204 2SC1205 30 30 100 100 2SC1206 45 4.5 1.7A 2SC1206A 45 4.5 1.7A 2SC1206B 45 4.5 2A 2SC1207 45 4.5 3A 2SC1207B 45 4 4A 2SC1208 36 5 10A 2SC1208A
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2sc12012sc12022sc12032sc1204+122sc12052sc12062sc1206a2sc1206b2sc12072sc1207b2sc12252sc12942sc12372sc12392sc12342sc1247a
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2sa726
Abstract: 2SA798 2Sa750 2SA706 2sa735 2SA798 equivalent 2SA725 2SC1432 2SA773 2SA762
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SA701 -30 -5 -50 200 125 200 -6 -1 80* 12 2SA702 -50 -5 -50 200 125
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2sa7012sa7022sa7032sa704+152sa7052sa7062sa7072sa7082sa708a2sa7092sa7262sa7982sa7502sa7352sa798 equivalent2sa7252sc14322sa7732sa762
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2SC144
Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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t258-omifax062sc1442sd466+12sc5266
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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2sb504kpl 30092sb502bly34+6germaniumbf316absx122sd716, 2sb686 35w amplifiersbf197acy52
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2sk408
Abstract: 2SK2794 2sk409 2SK1999 ha22002 2SD669A 2SK2595
Contextual Info: GaAs LINEAR IC • H igh frequency linear 1C Type No. Package code MPAK-4 HA21008 5V Function & Characteristics BS tuner Amp.Vcc » 5 V, lo « 32 mA max Status * NF = 8.5 dB typ, PG « 10.5 dB typ (f = 900 MHz) MPAK-5 HA22012 LNA, VDD = 3 V, Idd = 3 mA typ, NF = 1.9 dB
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ha21008ha22012ha22022ha22016+13msp-18ha21001ms16dbtyp1sd11332sd11342sd11352sk4082sk27942sk4092sk1999ha220022sd669a2sk2595
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2SB415
Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Contextual Info: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~
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4000h2sb4152sb 7102sc1061+72sd5242sb504hd68p012sb5072sa7622sc8272sc1362
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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THINKI transistor catalog
Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
Contextual Info: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003
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2sa914o-1262sa9002sc2556+112sc2556alm317ko-220lm317tthinki transistor catalogaudio amplifier icbd249c catalogaudio high power amplifier3dd3012sc32292sa747
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