2SA1437 Search Results

2SA1437

Abstract: ITR03622 ITR03623 ITR03624 ITR03625 ITR03626
Contextual Info: 注文コード No. N 2 5 2 4 A 2SA1437 No. N2524A 30300 半導体ニューズ No.2524 とさしかえてください。 2SA1437 PNP エピタキシァルプレーナ形シリコントランジスタ 高 hFE, 低周波一般増幅用 用途 ・ 低周波一般増幅 , 各種ドライブ , ミューティング回路。

2SA1437

Abstract: ITR03622 ITR03623 ITR03624
Contextual Info: Ordering number:ENN2524A PNP Epitaxial Planar Silicon Transistor 2SA1437 High-hFE, AF Amplifier Applications Applications Package Dimensions • AF amplifier, various drivers, muting circuit. unit:mm 2003B Features [2SA1437] · Ultrasmall-sized package permitting sets to be made

2SA1437

Contextual Info: Ordering number: EN 2524A _ N0.2524A 2SA1437 PNP Epitaxial Planar Silicon Transistor i High-hjTE, A F Amp Applications Applications . AF amp, various drivers, muting circuit Features . Very small-sized package permitting sets to be made smaller and slimmer,

2sa143

Abstract: 2SA1437 VEBO-15V
Contextual Info: Ordering number:EN2524A PNP Epitaxial Planar Silicon Transistor 2SA1437 High-hFE, AF Amplifier Applications Applications Package Dimensions • AF amplifier, various drivers, muting circuit. unit:mm 2003A Features [2SA1437] · Very small-sized package permitting sets to be made

2SA1437

Abstract: ITR03622 ITR03623 ITR03624
Contextual Info: Ordering number:ENN2524A PNP Epitaxial Planar Silicon Transistor 2SA1437 High-hFE, AF Amplifier Applications Applications Package Dimensions • AF amplifier, various drivers, muting circuit. unit:mm 2003B Features [2SA1437] · Ultrasmall-sized package permitting sets to be made

Contextual Info: 2SA1437 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)50m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V)500m @I(C) (A) (Test Condition)10m

2SA169

Abstract: 2SC4390 2sc4705 2SC5155
Contextual Info: H ig h -h p g ale H i g h — h F E , H i g h — ♦ ♦ ♦ ♦ H ig h V gßQ T r a n s i s t o r s V E B O Case outlines unit:mm SANYO :SMCP*f-o.s .„.i.i B'-Base -¿¡Collector C E:Emi tter B E T r - a n s i s t o r - s A p p 1 i c a t F e a t u r e s

2sa970

Abstract: 2SA564A 2SA906 2sa1015 2SA988 2SA904A 2SA1142 2SA1207 2sa949 2SA1038
Contextual Info: - 2SA 893A 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 894 895 896 89/ 898 ^ 899 ^ 900 / 901 2SA 902 ^ 2SA 903 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 904 905 ^ 906 ^ 912 913 913A 914 915 — 916 , 917 ^ 918 2SA 920 2SA 921 2SA 2SA 2SA 2SA 2SA 922 S 923 '' 924 925

2SB1406

Abstract: 2SK715
Contextual Info: Product Selection Guide by Function Very High Frequency Applications Classified by package and arran g ed in order of decreasing fr. M inus sign for P N P is om itted due to space lim itations. PG tM A G ,N F:f= 0.9G H z Type N um ber Pilgt* 2SC3779 NP NP

2SA850

Abstract: 2N2216 2N5400 MOTOROLA 2N3064 2SB646A 25M SOT89 motorola bc450 15J1A LOW-POWER SILICON PNP KT214A
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 5 10 -15 20 >= NthAmerSemi NthAmerSemi See Index SGS-Ates Hybrid Semi SGS-Ates Semelab Semelab See Index ~~~~~~ Hitachi Ltd Hitachi Ltd Hitachi Ltd Hitachi Ltd Hitachi Ltd Hitachi Ltd Semicoa NthAmerSemi Space Power

TO-32-070

Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Contextual Info: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

AUDIO AMPLIFIER

Abstract: audio amplifier POWER TRANSISTORS 2SA1766 2SC3650 2SC3651 2SC4390 2SC4705 2SK304 2SK404 2SK546
Contextual Info: Absolute maximum ratings Device Package type Electrical characteristics Ta = 25 "C Icbo max @ VCB Applications VCBO (V) Vceo (V) VEBO (V) lc (A) PC (W ) Tj (C ) hFE (£• Vce - lc Icbo max (|iA) VCB (V) hFE 0.1/0.1 20/40 fT @ Vce - lc VcE (V) lc (mA) fr

STK412-750

Abstract: STK282-170-E STK350-530t stk*282-170 STK412 440 stk282 270 STK 412-770 stk412 770 STK282-170-E sanyo stk433-870
Contextual Info: Designed & produced by Triad. www.triad.uk.com Semelab Limited Coventry Road, Lutterworth Leicestershire LE17 4JB, UK Telephone: +44 0 1455 552505 Facsimile: +44 (0)1455 552612 Email: sales@magnatec-tt.com Website: www.magnatec-tt.com A subsidiary of TT electronics plc

V1525

Abstract: 2SC3114 2SA1692 2SC3068 High Vebo 001S4 2SC3071 2sc3495
Contextual Info: b3E í 7W07b SAfÍYO 001S42Q ISS « T S A J H i g h “ h p g H i g h V g ß Q T r a n s i s t o r s SANYO SEMICONDUCTOR CORP Case outlines unit:11ml SANYO :SMCP »Me— 0.1 B’ -Base n -Jlector ltter ale H i g h —hFE, H1g h —VEBO T r a n s i s-toi-s

2SA1410

Abstract: 2-7D101A 2SA1441 2SA1409 HV COB 2SA1407 2SA1408 2SA1412 2SA1412-Z 2SA1413
Contextual Info: - 34 - <Ta=25'C.*EniiTc=25‘ Ç & £ s iê VcBO V) VCEO (V) lc (D C ) (A) Pc m Pci (W) ICBO (W) M fà ft 1É (Ta=25‘ C) , hF (/¿A) VcB (V) Vct (V) (A) [*EP[âtypüf] , (V) > , , V le (A) (V) Ib (A) 2SA1406 CRT Vout -200 -200 -0.1 1. 2 7 -0.1 -150 40

Contextual Info: H i gh - hp g High V gg QT r an si s to r s ale Hi g h — hF E, 1 7 A B H ig h — V E B O Ti-ansi s t o r sSANYO:SMCP Case outlines unit:mm SANYO:MCP 1 :B, 2 :E, 3 :C. ” » p 1 i ca t i o n s A tp •+■ *1 « V 1* *—* *—* * High hFE (500 to 3200)

2sc3495

Abstract: 2SA1692
Contextual Info: SAfiYO High-hpg ole H i gin — h F E . H i g h — V E B O F e a t u r e s ♦ ♦ ♦ ♦ High V^ßQ T r a n s i s t o r s T r - a n s i s t o r s l :Base SANYO:SMCP 2:Emi tter 3 -Co 1lector X cat. i o n s A p p l c High hFE 500 to 3200 * AF amp High VEBO S 15V