2N697 Search Results

2N718

Abstract: SA37T 2N696 2N717 2N1711 2n697 2N1613 2N956 2N731 2NI613
Contextual Info: TYPES 2N696, 2N697. 2N717. 2N718. 2N718A, 2N730, 2N731, 2N956, ZUmO, 2N150J. 2N1613. 2N1711 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 6 9 3 4 7 1 , M A Y 1 9 6 3 - R E V I S E D A U G U S T 1 9 6 9 Highly Reliable, Versatile Devices Designed for

2n3053A complementary

Abstract: 40362 2N4036 BUX40A 40319 2n4314 2N1893 2N2102 2N2270 2N3053
Contextual Info: THOflSON/ D IS T R IB U T O R SÔE D • =102^073 000572b OflO ■ TCSK Bipolar Power Transistors High-Speed Switching h p E at V c e “ 10V V c E » a t 'V C u rren t - mA T yp e No. v CEO<su9> V vc er (* u ) Pt w V 7W max 2N2102 FA M ILY (n-p-n) 2N697

2n697

Abstract: TRANSISTOR 2n697 2N696 2N697 equivalent 2N697 JAN 2N697S 2N696S
Contextual Info: TECHNICAL DATA NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/99 Devices Qualified Level 2N696 2N696S 2N697 2N697S MAXIMUM RATINGS Ratings Collector-Base Voltage Emitter-Base Voltage Total Power Dissipation @ TA = 250C 1 @ TC = 250C (2)

Contextual Info: GENERAL PURPOSE SILICON NPN TRANSISTOR 2N697 • Hermetic TO39 TO-205AD Metal Package. • Ideally suited for General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCER VEBO PD PD

2N697

Abstract: RCA-2N697 rca transistor TRANSISTOR 2n697 RCA Solid State Power Transistor
Contextual Info: E SOLID STATE 38 7 5 08 1 G E S O L I D S T A T E "Öl ÖF|3ö7SDfll 00170Ô4 3 jf" o 1 e 17084 D T-yr-fy High-Speed Power Transistors_ File Number 2N697 Silicon N-P-N Planar Transistor 16 TERMINAL DESIGNATIONS For High-Speed Switching Service in Electronic Data-Processing Systems

2N697 JAN

Abstract: 2N697
Contextual Info: TECHNICAL DATA NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/ 99 Devices Qualified Level 2N696 2N696S 2N697 2N697S MAXIMUM RATINGS Ratings Collector-Base Voltage Emitter-Base Voltage Total Power Dissipation @ TA = 250C 1 @ TC = 250C (2)

TRANSISTOR 2n697

Abstract: RCA-2N697 2N697 Transistor Data chart QQ170 25C06
Contextual Info: G E SOLID STATE 38 750 81 01 G E SOLID STATE DeT J 3fl750fll 0 0 1 7 0 5 4 3 0 1E 17084 D T -}$ r-l'7 High-Speed Power Transistors_ File Num ber 2N697 16 TERMINAL DESIGNATIONS Silicon N-P-N Planar Transistor For High-Speed Switching Service in Electronic Data-Processing Systems

SE 442

Abstract: MARKING M1W 2N696 TRANSISTOR 2n697 MKAC 2N697 RAW MATERIAL INSPECTION procedure 2N697 equivalent 2N697 JAN 2N696 equivalent
Contextual Info: M lL -S -1 9 5 0 0 /9 9 E 31 July 1967 su P e r s e ulng MI L - S - 1 9 5 0 0 /99D 3 D ecem ber MILITARY SPECIFICATION S E M IC O N D U C T O R D E V IC E , T R A N S I S T O R , P I T C H I N G , M E D IU M -P O W E R TYPES 2N696 AND 2N697 T h is s p e c ific a tio n is m a n d a to ry f o r u s e by a ll D e p a r t­

2n1711s

Abstract: 2N2218S 2N2904S 2N4406 2n4890s 2N4404 2N697S 2N1613S 2N2218AS 2N2219AS
Contextual Info: TO-39 NPN METAL TRANSISTORS AM PLIFIER AND SWITCH Device Type 2N696S 2N697S 2N1613S 2N1711S 2N2218S 2N2218AS 2N2219S 2N2219AS Polarity v CEO V CER+ Vdc NPN NPN NPN NPN NPN NPN NPN NPN 40+ 40 + 50+ 50+ 30 40 30 40 lc max. (mA) 500 800 300 800 800 HpE min. @ IC

2N5978

Contextual Info: b6E D HA RR IS S E M I C O N D SE CT OR 43 0 2 2 7 1 D D S Q S M b öbS I IHAS 2N6975, 2N6976 2N6977, 2N6978 fjl H A R R I S W • S E M I C O N D U C T O R 5A, 400V and 500V N-Channel IGBTs December 1993 Features Package • 5A, 400V and 500V • JEDEC T0-204AA

TRANSISTOR 2n697

Contextual Info: GENERAL PURPOSE SILICON NPN TRANSISTOR 2N697 • Hermetic TO39 TO-205AD Metal Package. • Ideally suited for General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCER VEBO PD PD

2N697

Abstract: 2N696
Contextual Info: TECHNICAL DATA 2N696 2N697 MIL-PRF QML DEVICES Processed per MIL-PRF-19500/99 NPN MEDIUM-POWER SILICON TRANSISTORS MAXIMUM RATINGS Ratings Symbol Value Units VCBO VEBO PT 60 5.0 0.6 2.0 Vdc Vdc W W Collector-Base Voltage Emitter-Base Voltage Total Power Dissipation @ TA = 250C 1

Contextual Info: i l i H a r r is uu semiconductor 2N6975, 2N6976 2N6977, 2N6978 5A, 400V and 500V N-Channel IGBTs December 1993 Package Features JEDEC T0-204AA BOTTOM VIEW • SA, 400V and 500V • V CE ON 2V • Tp! 1^8, 0.5ns EMITTER • Low On-State Voltage • Fast Switching Speeds

2n697

Abstract: TRANSISTOR 2n697 2N696 2N696S
Contextual Info: TECHNICAL DATA NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/99 Devices Qualified Level 2N696 2N696S 2N697 2N697S MAXIMUM RATINGS Ratings Collector-Base Voltage Emitter-Base Voltage Total Power Dissipation @ T A = 250C 1 @ T C = 250C (2)

Transistor BC177

Abstract: 2N3053 ZT87 2N1131 2N1132 2N4037 2N696 2N697 BC107 BC177
Contextual Info: NPN LOW LEVEL < Type o< CD Max 2N3053 60 Max VcE sat at V ce O U 'C: V mA V mA mA 40 700 1.4 150 15 2N696 60 40 2N697 60 40 BFY51 60 30 !c 500 1.5 150 500 1.5 150 1000 0.35 150 Ib h FE Min. Max. 50 250 20 60 15 40 120 15 40 15 Continued Min f T at at Pto,

2n2396

Abstract: 2N696 2N2395 TI432
Contextual Info: TYPES 2N2395, 2N2396 N-P-N SILICON TRANSISTORS BU LL E T IN NO. DL-S 646083, OCTO BER 1964 FOR GENERAL PURPOSE AMPLIFIER AND SWITCHING APPLICATIONS Formerly TI432, TI433 • Electrically Similar To 2N696 and 2N697 • Compatible Package For Interfacing with

2N697

Contextual Info: P ow er T ra n s is to rs _ T-3Ò-0 5- Gö j_ - File Number 2N697 HARRIS SEMICOND SECTOR 27E J> Silicon N -P -N Planar Transistor • 4 3 D 22 7 1 00n?7D 16 b ■HAS TE R M IN A L D E S IG N A TIO N S

BC337C

Abstract: bc327c BC338C bc337b 2N1131 2N1132 2N3053 2N4037 2N696 BC107
Contextual Info: NPN LOW LEVEL 2N3053 Max VcE sat at V ceO U 'C: < Type o< CD Max V mA V mA mA 60 40 700 1.4 150 15 2N696 60 40 2N697 60 40 BFY51 60 30 !c Ib h FE Min. Max. 50 250 20 60 15 40 120 15 40 500 1.5 150 15 500 1.5 150 1000 0.35 150 at Continued Min f T at Pto,

2N3019A

Abstract: 2N3114 2N5682 2N1613A 2N3501 JANTX transistor 2N3725 2N2219 JANTX 2N2219A 2N3020 transistor 2n2270
Contextual Info: N EW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-5/TO205AD/TO-39 TO-5 T0205A D hr iff ill Ic m ax A M PS 2N697 40h 0.8 40/120@ 150/10 2N1711 50h 1.0 2N 1613A 50h 2N1893 D E V IC E TY PE !/ ^ C E (sa t) @ If/Iß V @ m A/mA C<P P fx (M H z) 1.5@150/15

BC238B

Abstract: BC547B bcy58 ZT Ferranti 2N1131 2N1132 2N3053 2N4037 2N696 2N697
Contextual Info: NPN LOW LEVEL 2N3053 Max VcE sat at V ceO U 'C: < Type o< CD Max V mA V mA mA 60 40 700 1.4 150 15 2N696 60 40 2N697 60 40 BFY51 60 30 !c Ib h FE Min. Max. 50 250 at Continued Min f T at Pto, at Tamb Package Comple­ ment = 25°C lc !c mW mA MHz mA 150 100

MIL-S-19500

Abstract: 2902n TRANSISTOR 2n697 2N3700 DIE MIL-S-19500 FOR POWER LINE TRANSISTOR 2N497 2N497 JAN 2n2222 jan 2N657 2N910 JAN
Contextual Info: Winter 1997-1998 Microsemi's Watertown division received QPL Status on the following transistor part types in August 1997. PART TYPE 2N497 & S 2N498 & S 2N656 & S 2N657 & S 2N696 & S 2N697 & S 2N1131 & L 2N1132 & L 2N718A 2N1613 & L 2N720A 2N1893 & S 2N1711 & S

2N3019A

Abstract: 2N3501A
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-5/TO205AD/TO-39 PACKAGE DEVICE TYPE TO-5 T0205AD 2N697 2N1711 2N1613A 2N1893 2N2218A 2N2218AA 2N2219A 2N2219AA 2N2270 2N3019A 2N3020 2N3053A 2N3114 2N3300 2N3498A 2N3499A 2N3500A 2N3501A 2N3724 2N3725

2N73A

Abstract: 2N696 2n697 2N718 ml907 TW58 2W17
Contextual Info: TYPES 2N696, 2N697. 2N717. 2N718. 2N718A, 2N730, 7MI31. ?tW58. 2N1420. 2N1507, 2W1613, 2NI71I N-P-N SILICON TRANSISTORS B U L L E T I N N O. D L - S 6 9 3 4 7 1 , M A Y 1 9 6 3 - B E V I S 6 D A U G U S T 1 9 6 9 Highly Reliable, Versatile Devices Designed for

BC107

Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC177 BCY59 BCY79
Contextual Info: NPN LOW LEVEL 2N3053 Max VcE sat at V ceO U 'C: < Type o< CD Max V mA V mA mA 60 40 700 1.4 150 15 2N696 60 40 2N697 60 40 BFY51 60 30 !c Ib h FE Min. Max. 50 250 at Continued Min f T at Pto, at Tamb Package Comple­ ment = 25°C lc !c mW mA MHz mA 150 100