AN72S4 Search Results

48409

Abstract: rfp70n03
Contextual Info: RFP70N03 £ ü H A R R IS S E M I C O N D U C T O R March 1994 70A, 30V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFET MegaFET Features • Package T 0 -2 2 0 A B 7 0 A .3 0 V TOP VIEW • *"d s <o n ) = 0 . 0 1 o n • U IS R a tin g C u rv e (S in g le P u lse )

10N40E

Abstract: 10n40e1d HGTP10N40E1D HGTP10N40C1D HGTP10N50C1D HGTP10N50E1D ls25 diode diode OA-75
Contextual Info: bSE HARRIS SEtllCOND SECTOR H A R R I S S E M I C O N D U C T O R 1> Bfl M 3G 22 71 005D2b4 850 H H A S HGTP10N40C1D, HGTP10N40E1D HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes December 1993 Package Features

2N5978

Contextual Info: b6E D HA RR IS S E M I C O N D SE CT OR 43 0 2 2 7 1 D D S Q S M b öbS I IHAS 2N6975, 2N6976 2N6977, 2N6978 fjl H A R R I S W • S E M I C O N D U C T O R 5A, 400V and 500V N-Channel IGBTs December 1993 Features Package • 5A, 400V and 500V • JEDEC T0-204AA

EM- 546 motor

Abstract: G8P50G 2S2A
Contextual Info: HGTD8P50G1, HGTD8P50G1S HARRIS S E M I C O N D U C T O R 8A, 5 0 0 V P - C h a n n e l I G B T s March 1997 Features Pa ckage JEDEC TO-251 AA • 8A, s o o v • 3.7V V CE SAT EMITTER COLLE CTO R GATE • T y p ic a l Fall T i m e - 1 8 0 0 n s • H ig h I n p u t I m p e d a n c e

Contextual Info: HA RR IS SEÎ1IC0N» S E C T O R bflE D • M30 E 27 1 DQSOEEfi Ô4T ■ ¡ H A S HGTG30N120D2 30A, 1200V N-Channel IGBT D ecember 1993 Features Package JEDEC STYLE TO-247 TOP VIE!N • 30 A m p 1200 V olt • L a tch Free O p e ra tio n _ EMITTER • T y p ic a l Fall T im e - 580ns

Contextual Info: ¡2 htftiSSff HGTA32N60E2 32A, 600V N*Ch3nn6l IGBT December 1993 Features Package • 32 Am p, 600 Volt JEDEC M0-093AA 5LEAD TO-218 • Latch Free Operation • Typical Fall T im e 620ns 5 5 EMITTER > 4 EMITTER KELVIN 3 3 COLLECTOR > 2 NO CONNECTION > 1 GATE

IRFR9120

Abstract: p-channel pspice model IF9120 TA17501 123E5
Contextual Info: IRFU9120, IRFR9120 & 5.6A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Package JEDEC T 0-25 1 A A • 5.6A, 100V SOURCE • r DS ON = 0.600Q • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve

Contextual Info: HARRIS SEtlICOND SECTOR Ì l ì H A R R IS VM J s e m .c o n d u c t o r bflE » Bi M3GE271 OGSOEbM 660 * H A S HGTP10N40C1D, HGTP10N40E1D HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes December 1993 Package