IC 4098
Abstract: 2N5355 HS5306 2N5354 2N5356 2N5418 2N5419 2N5420 D29E1 D29E2
Contextual Info: SILICON SIGNAL SWITCHING & AMPLIFIER COMPLEMENTARY PNP-NPN PAIRS Type NPN PNP 2N5354 V c E fSATJ lllFE V Pt < 2 5 °C ~(mW) (mA) Min. M ax. @ 50mA, 2.5m A M ax. (V) V cEO @ 1V, 50mA lc ’ Ccb @ 10V, 1MHz T yp ical (Pf) ft T yp ical (MHz) Package Outline No.
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2n53542n54182n53552n5419+102n53562n5420500mad33d26d29e7d33d27ic 4098hs5306d29e1d29e2
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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ic hxj 20381n52398db5ttfk 102 cny 70+6hxj 2038rca 40361 transistorrca 40362tfk 680 cny 70diode equivalent 1n34a2n5952 equivalent
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2N5309
Abstract: 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (S A T ) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN
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2n42562n44242n4425130-b40+92im51722n51742n52322n5232a2n5249a012ysc2n53092n53052n5306
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2N5815
Abstract: 2N5225 N5226 2N4971 2N5042 2N5143 2N4235 2N4236 2N4238 2N4314
Contextual Info: Medium Power Amplifiers and Switches H P O L A R IT Y M A X IM U M R A T IN G S C A SE 2N4238 2N4239 2N4314 2N4400 2N4401 2N4402 N N P N N P TO-39 TO-39 TO-39 TO-92A TO-92A TO-92A 1000 1000 1000 5004 5004 500 ♦ 1 1 1 0.6 0.6 0.6 60 80 65 40 40 40 30 30 50
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2n42382n42352n42392n4236+112n43142n4400o-92a2n44022n44012n58152n5225n52262n49712n50422n5143
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2N5306 equivalent
Abstract: ATI 200M D39C4 GES6220 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (SA T ) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN
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2n42562n44242n4425130-b40+102im51722n51742n52322n5232a2n5249a100hz2n5306 equivalentati 200md39c4ges6220
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2N5816
Abstract: 2N5815 2N5225 2N5143 2N5447 2N4969 2N5226 2N5450 2N5818 2N5819
Contextual Info: Medium Power Amplifiers and Switches TYPE NO. POLA RITY CASE MAXIMUM RATINGS HFE Pd IC VCEO mW (A) (V) min max IC (mA) VCE (V) VCE(sat) max (V) (A) IT min (MHz) Cob COM PLE max MENTARY TYPE (PF) 2N4953 2N4954 2N4969 2N4970 2N4971 N N N N P TO-92B TO-92B
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2n4953o-92b2n49542n4969+12o-1062n49702n49712n58162n58152n52252n51432n54472n52262n54502n58182n5819
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2N5225
Abstract: 2N4033 2N5042
Contextual Info: Medium Power Amplifiers and Switches H,re COMPLE C* *T max MENTARY min MHz (M at) TYPE (V) Ic (A) 10 150 100 100 100 10 10 5 5 5 0.4 0.5 0.5 0.5 0.5 0.1 0.15 0.5 0.5 0.5 100 60 150+ 100 100 10 12 20 20 20 2N3108 2N3020 300 300 140 250 150 100 100 150 150
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2n37942n39452n40292n4030+82n40312n40322n40332n40362n40372n42342n52252n5042
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2N2926 equivalent
Abstract: beta transistor 2N2222 2N3392 equivalent 2N3416 equivalent 2n3393 equivalent 2N3900A 2N3394 equivalent 2N3859A equivalent to PNP 1N4532 2N5232A equivalent
Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A
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50/ia800maget706get708+15get914get3013get3646ge1705cet7082n2926 equivalentbeta transistor 2n22222n3392 equivalent2n3416 equivalent2n3393 equivalent2n3900a2n3394 equivalent2n3859a equivalent to pnp1n45322n5232a equivalent
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2N4121
Abstract: 2N5139 2N4917 2N3639 2N4122 2n5138 016 2N4062 2N5383 2N5857 2N5138
Contextual Info: CENTRAL SEMICONDUCTOR = tï 1989963 CENTRAL SEMICONDUCTOR * 1 DE | . JT.„. DDDDS13 b 61C 00213 - //-°/ PNP EPOXY - SW ITCHING A N D G ENER AL PURPOSE (Cont'd. V cb V CE V eb hFE at •c VCE V V V min max mA V V 2N4060 2N4061 2N40622N4121 2N4122 30 30
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dddds132n40602n40612n4062-+132n4121o-1062n41222n41252n41262n51392n49172n36392n5138 0162n40622n53832n58572n5138
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BTB 600 BR
Abstract: tp5372 2N5087 2N5142 2N5221 2N5226 2N5227 2N5354 2N5355 2N5356
Contextual Info: SPRAGUE/SEMICON» GROUP 8 5 140 19 SPRAGUE. T 3 ~ T ~ M flSIHflSO D G G 3 S 1 h ' b S E M I C O N D S / ICS • 93D 0 3 5 9 6 J P _ / T'û 7-9ô PLASTIC-CASE BIPOLAR TRANSISTORS PNP Transistors ‘2N’ and ‘TP ’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C
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00035u2n5087tp5138tp5139+102n5142o-226aa/stylebtb 600 brtp53722n52212n52262n52272n53542n53552n5356
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AL102 ATES
Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible
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trans-611dt15212n2270bc107-182ks+16esc182kasesc182kbsesc1q8-183kseic183kbs8c183kcsbc109-184ksal102 ates2n2222a mpskr206ad149tis58tis88sft3532n24312n4265bfy29
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2n7588
Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.
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2n7588p3139bc233asprague 40d+6gex36/7c4274s1766c12712tc236gp149
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2N3405
Abstract: transistors equivalent AP 3706 P mps3702 MPS3704 equivalent T0-92B transistors mps3704 2N3404 2n3402
Contextual Info: 2N3702 trough 2N 3706 MPS 3702 through MPS 3706 I PNP . NPN SILICON GENERAL PURPOSE AP TRANSISTORS THE ABOVE TYPES ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AP MEDIUM POWER APPLICATIONS. THE 2N3702 SERIES ARE SUPPLIED IN CASE TO-92B. THE MPS3702 SERIES ARE SUPPLIED IN
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2n3702o-92bmps3702t0-92a+11t0-92b2n/mps37022n/mps3703360mw2n3405transistors equivalentap 3706 pmps3704 equivalenttransistors mps37042n34042n3402
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2NS400
Abstract: transistor bc252b 2N5142 2N5143 2N5226 2N5354 2N5355 2N5365 2N5366 2N5401
Contextual Info: M axim um Ratings Type No. 2N5142 2N5143 2N5221 ^CBO ^CEO ^EBO M Min V (V) Min Min 20 20 4 20 15 20 15 4 3 Electrical Characteristics (Ta=25°C, Unless O therw ise Specified) ?D (W) (A) @Tc=25°< 0.625 0.625 0.625 ^CBO ^CB 'c e s ^CE (UA) Max 8(V) (da) Max
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2n51422n51432ns2212ns400+7transistor bc252b2n52262n53542n53552n53652n53662n5401
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BTB 600
Contextual Info: ALLEGRO MICROSYSTEMS INC 8 5 1 4 0 1 9 S P R A GU E. il ï • DSD433Ô DODSSIh S ■ ‘ü ^ ‘ S E M I C O N D S / ICS 9 3 D 0 3 5 9 6 3> T'«t7-9ô PLASTIC-CASE BIPOLAR TRANSISTORS PNP Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C
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dsd4332n5087tp5138tp5139+72n51422n52212n52262n52272n53542n5355btb 600
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2N6008
Abstract: 2N6000 2n3960a 2N5998 2N6006 2N6015 2N60C 2N6002 2n8004 GET3014
Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I V oltage 50/iA to NPN 5mA 5mA ra p GET706 GET708 to GET914 GET3013 GET3646 2N6000 2N60Q2 2N6001 2N6S03 40 GET2221A GET2222A 2N 6004 2N 6006 2N6010 2N6012 50 60 GET»29 60 GET24S4
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50/ia800maget706get708+15get914get3013get3646ge1705cet7082n60082n60002n3960a2n59982n60062n60152n60c2n60022n8004get3014
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d33025
Abstract: 2N6000 2n3391 2N6006 2N6002 GET3013 GET3014 GET3638 2n2926 GET706
Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A
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50/ia800maget706get708+13get914get3013get3646ge1705cet708d330252n60002n33912n60062n6002get3014get36382n2926
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2N6004
Abstract: 2n3960a 2N3856 d33025 2N4424 2n8004 2N6000 2N6016 2N3856A 2N6015
Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A
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50/ia800maget706get708+15get914get3013get3646ge1705cet7082n60042n3960a2n3856d330252n44242n80042n60002n60162n3856a2n6015
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2N4424
Abstract: D39C4 quan-tech GES6220 2N4256 2N4425 2N5174 2N5232 2N5232A 2N5249A
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V CE(SAT) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN 40
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2n42562n44242n4425130-b40+92im51722n51742n52322n5232a2n5249a2n5307d39c4quan-techges6220
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NPN transistor 2n4400 beta value
Abstract: TP4058 NPN transistor 2n 3904 TP4059 transistor EBC 3904 TP4060 2N2712 to-92hs TP3644 2N2711 2N2924
Contextual Info: Econoline S P R AGUE GENERAL-PURPOSE SMALL-SIGNAL AMPLIFIERS PO LA RIT Y D-C C U R R E N T G AIN hFE Conditions Limits 2N2711 2N2712 2N2923 2N2924 2N2925 2N2926« 2N3392 2N3393 2N3394 2N3395Y 2N3396Y 2N3397? 2 N3398T 2N3721 2N5172 NPN NPN NPN NPN NPN NPN
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2n27112n27122n29242n2925+142n29262n44012n44022n4403mps2713mps2714npn transistor 2n4400 beta valuetp4058npn transistor 2n 3904tp4059transistor ebc 3904tp40602n2712 to-92hstp3644
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"to-98" package
Abstract: 2N5355 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V hFE M in.-Max. @ IC , V C E (V> (V) Max. Typical (M H z) C cb@ 10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (SA T ) l c . *B PT 2N 4256 2N4424 2N 4425 N PN
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2n42562n44242n4425130-b40+92im51722n51742n52322n5232a2n5249a2n355to-98" package2n53552n5305
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SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A
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5ke100a5ke100ca5ke10a5ke10ca+165ke110a5ke110ca5ke11a5ke11ca5ke120a5ke120cassp35n03bc417ksh200 equivalent2n5457 equivalentss8050 equivalent1n34 equivalentfqp50n06 equivalentbd139 equivalent2n5458 equivalent2n3563 equivalent
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SG3524 application notes speed control
Abstract: how to convert 220v ac to 12v dc PZT61343 ne555 220v dc 220v motor speed control circuit with scr 220v AC MOTOR star capacitor circuit sg3524 drive motor sg3524 drive motor shutdown techniques 24v dc to 12v dc chopper transformer DC motor speed control using 555 timer
Contextual Info: Insulated-Gate Transistors Simplify AC-Motor Speed Control Application Note /Title AN75 1 Subect In ulated Gate ran istors imlify Cotor peed onrol) Autho ) Keyords Interil orpoation, emionuctor, vaanche nergy ated, witch ng ower uplie , ower An IGT’s few input requirements and low On-state resistance
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sg3524 application notes speed controlhow to convert 220v ac to 12v dcpzt61343ne555 220v+6dc 220v motor speed control circuit with scr220v ac motor star capacitor circuitsg3524 drive motorsg3524 drive motor shutdown techniques24v dc to 12v dc chopper transformerdc motor speed control using 555 timer
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2N5225
Abstract: 2N5815 2N5816 2n5814 2N5822 2N5420 2N5042
Contextual Info: Medium Power Amplifiers and Switches M AXIMUM RATINGS TYPE NO. POLA CASE RITY H FE VcE sat VcEO Pd Ic (mW) (A) (V) VcER * min max Ic ^C E max (mA) (V) (V) (A) Ic fT C 0b min max (MHz) (MHz) COMPLE MENTARY TYPE 2N5042 2N5220 2N5221 2N5225 2N5226 P N P
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2n50422n52202n52212n5225+112n52262n53542n53552n53562n53652n53662n58152n58162n58142n58222n5420
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