2N412 Search Results

hFE-200 to-92 npn

Abstract: 2N4123 2N4124 2N4125 2N4126
Contextual Info: 2N4123 _ 9N4194_ PHILIPS INTERNATIONAL SbE D • 711002b D042bb2 T3T ■ PHIN -= I SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in pla stic T O -9 2 envelopes, p rim a rily intended fo r low -pow er, sm all-signal a u d io ­ fre qu e n cy a p p lica tio n s fo r consum er service.

Contextual Info: 2N4126 PNP SMALL SIGNAL TRANSISTOR POWER SEMICONDUCTOR Features • • For General Purpose Switching and Amplifier Applications Especially Suitable for AF Driver and Low Power Output Stages E A TO-92 B Mechanical Data • • • • C Case: TO-92, Plastic

a5t4123

Abstract: 5t41
Contextual Info: TYPES 2N4123, 2N4124, A5T4123. A5T4124 N-P-N SILICON TRANSISTORS Î B U L L E T IN N O . D L -S 7 3 1 1 4 7 1 , N O V E M B E R 1 9 7 1 - R E V I S E D M A R C H 1973 S IL E C T t T R A N S IS T O R S * D E S IG N E D F O R G E N E R A L PUR PO SE S A T U R A T E D S W IT C H IN G

2N4124 MOTOROLA

Abstract: 2N4123 MOTOROLA 2N4124 2N4123
Contextual Info: MOTOROLA Order this document by 2N4123/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N4123 2N4124 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N4123 2N4124 Collector – Emitter Voltage VCEO 30 25 Vdc Collector – Base Voltage

2N4123

Abstract: 2N4124 2N4123 MOTOROLA
Contextual Info: MOTOROLA Order this document by 2N4123/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N4123 2N4124 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N4123 2N4124 Collector – Emitter Voltage VCEO 30 25 Vdc Collector – Base Voltage

Contextual Info: Lf5E D ITOS H ^0^7250 001775^ 0 TOSHIBA TRANSISTOR 2N4126 SILICON PNP EPITAXIAL TYPE PCT PROCESS 'T TOSHIBA (DISCRETE/OPTO) Unit in mm FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : IcBO=“50nA(Max.) @ VcB*-20V

Contextual Info: Lead Mounted Transistors NPN Transistors/TO-92 Type Number 2N4124 2N5172 2N5088 PN2222A 2N3904 2N4401 MPSA05/ITTA05 MPSA06/ITTA06 2N5551 MPSA42 VCEO Volts 25 25 30 40 40 40 60 80 160 300 hpE @ V ce/Ic V/mA 120-360 100-750 350-1400 100-300 100-300 100-300 min. 50

GES2222A

Abstract: NPN switching transistor 2N4403 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A G E Device b v CEO V C E sa t E Type @ 10m A -(V) Min. Max. @ l c (mA) V c e (V ) 2N3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300

2N4041

Abstract: 2N4127 2N3924 2N5016 2N5102 2N5108 2N3553 2N3632 2N3733 2N5421
Contextual Info: rf power transistors 114 SILICON NPN/RF I TYPE NUMBERS CASE SIZE VeB 2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 2N4040 2N4041 2N4127 2N4128 2N4427 2N4428 2N4429 2N4430 2N4431 2N4440 2N4933 2N5016 2N5070 2N5071 2N5090 2N5102 2N5108

ZTX3705

Abstract: 945 MOTHERBOARD CIRCUIT diagram MPS3693 ZTX108 BCY59P MPS3704 MPS3705 MPS6532 VC30 ZTX238
Contextual Info: NPN GENERAL PURPOSE TABLE 1 - continued Type MPS3704\ ZTX3704 J MPS3705 \ ZTX3705 / MPS6532 ZTX303 BCY59P MPS3693 ZTX238 ZTX383 ZTX384 BC183P ZTX108 2N4123 MPS3706\ ZTX3706 / ZTX302 ZTX301 BCY58P BC548P MPS3709\ ZTX3709 / MPS3710\ ZTX3710 / MPS3711 \ ZTX3711 f

2n5226

Abstract: 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E s a t E b v CEO Device Type @ 1 0 m A -(V) Min. M ax. @ l c (m A) 2N3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150

SRK-2001

Abstract: 2N3375 srf transistor SRK2002 SRF-1001 SRF1002 2N4440 2N2876 solitron transistors 2N5016
Contextual Info: rf power transistors 114 SILICON NPN/RF I TYPE NUMBERS CASE SIZE VeB 2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 2N4040 2N4041 2N4127 2N4128 2N4427 2N4428 2N4429 2N4430 2N4431 2N4440 2N4933 2N5016 2N5070 2N5071 2N5090 2N5102 2N5108

2N3903

Abstract: 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 10m A -(V) Min. Max. @ l c (mA) V c e (V ) 2N3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300

ZTX502

Abstract: BC17 MPS3645 BCY59P MPS3693 MPS3704 MPS3705 MPS6532 VC30 ZTX238
Contextual Info: NPN GENERAL PURPOSE TABLE 1 - continued Type M P S 3704 \ ZTX3704 J MPS3705 \ ZTX3705 / MPS6532 ZTX303 BCY59P MPS3693 ZTX238 ZTX383 ZTX384 BC183P ZTX108 2N4123 M P S 3706 \ ZTX3706 / ZTX302 ZTX301 BCY58P BC548P M P S 3709 \ ZTX3709 / M P S 371 0\ ZTX3710 /

SOT-23 ZF

Abstract: 2N4126 SOT-23 Mark ZF 2N3906 MMBT4126
Contextual Info: 2N4126 MMBT4126 C E C TO-92 BE SOT-23 B Mark: ZF PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents to 10 µA as a switch and to 100 mA as an amplifier. Sourced from Process 66. See 2N3906 for

2n3904 npn fairchild

Abstract: 2N3904 2N4124 MMBT4124 2n3904 sot 23 SOT23B
Contextual Info: 2N4124 MMBT4124 C E C TO-92 BE SOT-23 B Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. See 2N3904

Contextual Info: MCC Micro Commercial Components TM 2N4123 2N4124
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features NPN Silicon General zThrough Hole TO-92 Package zCapable of 625mWatts of Power Dissipation

Contextual Info: MCC Micro Commercial Components TM Features NPN Silicon General zThrough Hole TO-92 Package zCapable of 625mWatts of Power Dissipation zCase Material: Molded Plastic. UL Flammability • 2N4123 2N4124
  omponents 20736 Marilla Street Chatsworth

Contextual Info: 2N4123/4124 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Em itter Voltage: Vceo = 2N4123: 30V 2N4124: 25V • C ollector Dissipation: P c max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage :2N 4123

Contextual Info: MCC Micro Commercial Components Features • 2N4123 2N4124
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM • • • Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information

BC107 to92

Abstract: equivalent for BC337 NPN general purpose transistor BC337 BC327 NPN transistor datasheet bc337 transistor datasheet 2N4126 bc548 2N4124 bc548 Transistor BC177 transistor BC337-16 DATASHEET Transistor BC107
Contextual Info: Philips Semiconductors Small-signal Transistors Selection guide LEADED DEVICES continued PNP GENERAL PURPOSE LOW-POWER TRANSISTORS TYPE NUMBER PACKAGE VCEO max. (V) IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) 250 2N4124 NPN COMPL. PAGE 2N4126

2N4126

Abstract: 2N41 2N4125 transistor 2N4125 2n4125 transistor Tj150
Contextual Info: 2N4125/4126 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: TO-92 = 2N41 25: 3 0 V 2N4126: 25V * Collector Dissipation: Pc m ax =625mW V ceo ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic C ollector-B ase Voltage :2 N 4 1 2 5

2N4121

Abstract: 2N5139 2N4917 2N3639 2N4122 2n5138 016 2N4062 2N5383 2N5857 2N5138
Contextual Info: CENTRAL SEMICONDUCTOR = tï 1989963 CENTRAL SEMICONDUCTOR * 1 DE | . JT.„. DDDDS13 b 61C 00213 - //-°/ PNP EPOXY - SW ITCHING A N D G ENER AL PURPOSE (Cont'd. V cb V CE V eb hFE at •c VCE V V V min max mA V V 2N4060 2N4061 2N4121 2N4122 30 30

2N4126

Abstract: 2N4123 2N4124 2N4125
Contextual Info: N AMER PHILIPS/DISCRETE bTE T> m bL.SB'm GG2Û154 2T1 H A P X A 2N4126 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in plastic T O -92 envelopes, p rim a rily intended fo r low -pow er, small-signal a u d io ­ frequency applica tio ns f o r consum er service.