2N4100 Search Results

2N4045

Abstract: 2N2914 2N4880
Contextual Info: small signal transistors 74 , I SILICON NPN MONOLITHIC DUALS I TYPE PACKAGE 2N2913 2N2914 2N2915 2N2916 2N2917 2N2918 2N2919 2N2920 2N4044 2N4045 2N4100 2N4878 2N4879 2N4880 TO-78 TO-78 TO-78 TO-78 TO-78 TO-78 TO-78 TO-78 TO-78 TO-78 TO-78 TO-71 TO-71 TO-71

2N410

Abstract: 2N487 2n404 2N4880
Contextual Info: I» D DUAL MONOLITHIC MATCHED NPN SILICON PLANAR TRANSISTORS O 65 RUSHMORE STREET, WESTBURX NEW YORK 11590 516 997-7474 TWX 510*222*0974 2N4044 2N4045 2N4100 2N4878 2N4879 2N4880 G E N E R A L D E S C R IP T IO N D IELEC T R IC A LLY Package Options ISOLATED

2n4878

Abstract: 2N404S 2N4880
Contextual Info: CA L O GI C CÖRP 46E D calodic ^ • 1644322 0000300 2 ■ C 6 C Dielectrically Isolated Monolithic Dual NPN General Purpose Amplifier CO RPORA TION \J T - n - n 2N4044/2N4045/2N4100/2N4878/2N4879/2N4880 FEATURES • • • • • High Gain at Low Current

2N4880

Abstract: 2N4044 2N4045 2N4100 2N4878 DIELECTRICALLY ISOLATED 2N4879 X2N4044 X2N4045 X2N4100
Contextual Info: CALOGIC CORP MAE D 1Û44322 000Ü30D 2 mCGC hi calortc CORPORATION V Dielectrically Isolated Monolithic Dual NPN General Purpose Amplifier T -n t l g ro E 2N4044/2N4045/2N4100/2N4878/2N4879/2N4880 i ro FEATURES • • • • • ABSOLUTE MAXIMUM RATINGS

2N4045

Abstract: 2N4878 2N4880 2N4044 7474 ic 2N4100 2N4879 Dual Transistors TO-78
Contextual Info: D U A L M O N O L IT H IC M A T C H E D NPN SILICO N P L A N A R T R A N S IS T O R S ¡M US QMS, 65 RUSHMORE STREET, WESTBUR^ NEW YORK 11590 516 997-7474 TWX 510*222*0974 2N 4044 2N4045 2N4100 2N 4S78 2N4879 2N4880 GENERAL DESCRIPTION D IE LE C TR IC A LLY

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2N4045

Abstract: 2N4044 2N4100 2N4880 2N4878 HPE-200 2N4879
Contextual Info: 2N 4044, 2N 4045, 2N 4100, 2N 4878, 2N 4879, 2N 4880 Dual M o nolithic M atched NPN S ilicon P lan ar T ran s is to rs FEATURES • High Gain At Low Current hpg > 200 @ 10 ^ A • Low Output Capacitance Co b o < 0 .8 p F • h p E Match • Tight V BE Tracking

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

Contextual Info: -T -Z .1 -Z 3 Differential Amplifiers Continued Bipolar Monolithic Dual Transistors — NPN *B1-2 PART NUMBER PACKAGE VBE 1-2 mV Max pVI°C Max a v be (Note 1) h FE (Note 1) nA Min Max b V ceo V Min •CBO nA Max NF dB Max ff MHz @ lc Min c obo pF Max COMMENTS

2N4044

Abstract: 2N4045 2N4100 2N4878 3N165 3N166 3N188 3N189 3N190 3N191
Contextual Info: 1. DISCRETES Differential Amplifiers — Dual Monolithic P-Channel MOSFETS Enhancement Ordering Information Preferred P irt Number V osi th) min/max V Package BVd s s min/max ta s s max •g s s max V PA PA Vg S 1-2 max r C)S(on) max !) talon) min/max mA

bu808 equivalent

Abstract: bu808 2N4001 diode equivalent bu808 2N3953 2N4957 2N3908 2N3916 2N3930 BU143
Contextual Info: STI Type: 2N3778 Notes: Polarity: PNP Power Dissipation: 5.0 VCBO: 40 VCER: ICBO: ICBO ua: hFE: 10 hFE A: .2 VCE: VBE: IC A: COB: fT: 1.0 Case Style: TO-205AD/TO-39 Industry Type: 2N3778 STI Type: 2N3792 Notes: *BVCBO Polarity: PNP Power Dissipation: 150 Tj: 200

2SC1313

Abstract: bc182c NPN 2sC1685 2SC3247K 2SC734GR 2SC1815LY 2SC1815L-G 2SC1815LBL 2SC1815L 2S01623
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number -5 10 15 20 25 -30 40 Indust Mexi ToshibaCorp Sanyo Elect Sanyo Elect Indust Mexi ToshibaCorp Sanyo Elect ToshibaCorp See Index See Index ~SC~~~I\ ~atsus!!~ta 2SC2998G 2SC3114 2S01623U 2S01835 NB012EL NB012EZ NB012FL

E112 jfet

Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
Contextual Info: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

2N404S

Abstract: 2N4045
Contextual Info: , fine. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N4O44, 2N4045, 2H41OO, 2N4878, 2N4879, 2N4880 Dual Monolithic Matched NPN Silicon Planar Transistors hp > 200 @ 10 /nA FEATURES • High Gain At Low Current

NPD5564

Abstract: NPD5566 BFY91 IMF3958 2N3050 NF5458 Fairchild E212 MP842 J9100 SST5638
Contextual Info: Introduction Linear Integrated Systems is a U.S. based, full service semiconductor manufacturer of specialty linear products. Since 1987, we have been supplying pin for pin replacements for over 2000 discrete devices which are currently offered or were discontinued by Calogic, Interfet, Intersil, Micro Power Systems, Motorola, National, Fairchild, Phillips, and SiliconixVishay. We strive to provide our customers with the necessary options, solutions, and technology to produce leadership

2N3907

Abstract: 2N3908 2N5121 2N5120 2n5256 1300 NPN 2n5117 2N6088 2N6441 ad816
Contextual Info: I SEMICONDUCTOR TECHNOLOGY, INC. A M P L IF IE R T R A N S IS T O R S Polarity . - • 3131 S .E . J a y Street Stuart, Florida 34997 407 2 8 3 -4 5 0 0 • TW X - 51 0 -953-7511 FAX 4 0 7 -2 8 6 -8 9 1 4 SILICON DUAL DIFFERENTIAL STI Type ^ Powar Dissipation

Contextual Info: SE MIC OND UC TO R TECHNOL OGY DSE D | fll3h4Sfi □ " ~ T - cP 9 - c3 7 SEMICONDUCTOR TECHNOLOGY, INC. 3131 S.E. Jay Street Stuart, Florida 34997 407 283-4500 • TWX - 510-953-7511 FAX 407-286-8914 SILICON DUAL DIFFERENTIAL A M P L IF IE R T R A N S IS T O R S

e420 dual jfet

Abstract: AC digital voltmeter using 7107 MPS5010 bf320 JFET BF245 bf246 j201 2n3819 mc6821 ICL7117 VOLTMETER cookbook for ic 555 hall marking code A04 e304 fet
Contextual Info: Component Data Catalog 1987 INTERSIL, INC., 10600 RIDGEVIEW COURT, CUPERTINO, CA 95014 Printed in U.S.A. Copyright 1987, Intersil, Inc., All Rights Reserved ^ GE and 408 996-5000 TWX: 910-338-2014 are registered trademarks of General Electric Company, U.S.A.