27ST41S Search Results

ot 112

Abstract: 48-PIN EL101 h1213
Contextual Info: DENSE-PAC MICROSYS TE MS 2ñE D • 27ST41S 00Q1G17 S HIDPC DPL22V10A Dense-Pac Microsystems; Inc. PROGRAMMABLE LOGIC M ODULE D E SC R IP T IO N : The Dense-Pac Programmable Logic M odule DPL is a 48-pin Pin Grid Array (PGA) designed to support two "2 2 V 1 0 " field programmable array logic, 22 input, 10

CIT- 20

Abstract: DPS84H08-25C DPS84H08-25I DPS84H08-25M DPS84H08-55C ZIP-DPS4X16 4kx4 ram DPS88H16-25M 30A016-00
Contextual Info: DENSE-PAC MICROSYSTEMS G7E D | 27ST41S OGOOIOD 1 I 4KX4 BASED Dense-Pac Microsystems, Inc. C M O S SR A M FA M ILY - D IP S -7 = D E SC R IP T IO N : - 7V The 4KX4 Based Family b part of a new line of high speed static RAM modules developed by Dense-Pac Microsys­

Contextual Info: 3 0A 0 3 7-01 B DENSE-PAC 1 Megabit High Speed CMOS SRAM DPS128M8En MICROSYSTEMS PRELIMINARY DESCRIPTION: The DPS128M8En is a very high speed 128K x 8 Static Random Access Memory SRAM fabricated with a CMOS silicon gate process. The memory utilizes asynchronouscircuitryand may be maintained in any

Contextual Info: DENSE-PAC MICROSYSTEMS 8 Megabit UVEPROM DPV256X32V DESCRIPTION: The DPV256X32V is a 66-pin Pin Grid Array PGA consisting of four 256K X 8 UVEPROM devices in ceramic LCC packages surface mounted on a co-fired ceramic substrate w ith matched thermal coefficients.

12 SQ 045 JF

Contextual Info: DENSE-PAC MICROSYSTEMS 1 Megabit UVEPROM DPV3232VA DESCRIPTION; The DPV3232VA is a 66-pin Pin Grid Array PGA consisting of four 32K x 8 UVEPROM devices in ceramic LCC packages surface mounted on a co-fired ceramic substrate with matched thermal coefficients.

32 pin eprom cdi

Contextual Info: DENSE-PAC MICROSYSTEMS 4 M EGABIT FLASH EEPROM DPZ128X32VI/DPZ128X32VIP DESCRIPTION: T he D P Z 128X32V I/V IP is a 4 m egabit C M O S FLA SH Electrically Erasable and Programmable nonvolatile memory module. The module is built with four 128K x 8 FLASH m em ory devices. The D P Z 1 2 8 X 3 2 V I/V IP can be user

Dense-Pac Microsystems

Abstract: NC-641
Contextual Info: DENSE-PAC 32 Megabit FLASH EEPROM MICROSYSTEMS DPZ2MX16NV3 PRELIMINARY DESCRIPTION: The D PZ 2 M X 1 6 N V 3 "V E R S A - S T A C K " m odule is a revolutionary new memory subsystem using Dense-Pac M icrosystem s' ceram ic Stackable Leadless Chip Carriers

amd 29f010

Abstract: DP5Z DP5Z12832VA
Contextual Info: DENSE-PAC 4 Megabit 5V CMOS Flash EEPROM MICROSYSTEMS DP5Z12832VA/DP5Z12832VAP PRELIMINARY DESCRIPTION: The DP5Z12832VA/DP5Z12832VAP is a 4 megabit 5 volt CMOS Flash EEPRO M (Electrically In-System Programmable and Erasable ROM Memory) module. The module is built with four 128K x 8 FLASH

512k x 4 cmos

Contextual Info: DENSE-PAC 4 Megabit C M O S SRAM M I C R O S Y S T E M S D P S 5 12 S 8 P / D P S 5 12 S 8 P L / D P S 5 12 S 8 P L L D E S C R IP T IO N : The DPS512S8P/PL/PLL is a 512K X 8 high-density, low-power static RAM module comprised of four 128K X 8 m onolithic S R A M 's , an advanced

DQ2451

Abstract: DPD16MS32P
Contextual Info: DENSE-PAC 512 Megabit CMOS DRAM M I C R O S Y ST E M S DPD16MS32PW5 P R E L IM IN A R Y DESCRIPTION: The DPD16MS32PW5 is the 16 Meg x 32 Dynamic RAM module in the family of S u per SIM/VP modules that utilize the new and innovative space saving TSOP stacking technology. The module is constructed of eight dynamic RAM stacks surface

Contextual Info: 1 Megabit High Speed CMOS SRAM D EN SE-PA C DPS 128M8CnY/BnY, DPS128X8CA3/BA3 M I C R O S Y S T E M S DESCRIPTION: The DPS 128M8CnY/BnY, DPS128X8CA3/BA3 High Speed SRAM devices are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC .

Contextual Info: DENSE-PAC MICROSYSTEMS 1 Megabit CM OS SRAM DPS128M8n3/DPS 128X8A3 DESCRIPTION: The DPS128M8nY & DPS 128X8A3 SRAM devices are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC . Available in straight leaded,

Contextual Info: DENSE-PAC 4 Megabit CMOS UVEPROM MICROSYSTEMS DPV12832VA DESCRIPTION: The DPV12832VA is a 66-pin Pin Grid Array PGA consisting o f four 128K X 8 CMOS UVEPROM devices in ceram ic LCC packages surface mounted on a co-fired ceram ic substrate w ith matched thermal

Contextual Info: DENSE-PAC 2 Megabit CMOS SRAM MICROSYSTEMS DPS128X16n3 DESCRIPTION: The DPS128X16n3 SRAM "S T A C K " modules are a revolutionarynew memory subsystem using Dense-PacMicrosystems'ceramicStackable LeadlessChip Carriers SLCC . Available in straight leaded, " J " leaded

DPS512S8U

Contextual Info: DENSE-PAC 4 Megabit C M O S SRAM MICROSYSTEMS DPS512S8U D E S C R IP T IO N : The DPS512S8U is a 512KX 8 high-density,low-powerstaticRAM module comprised of four 128K X 8 monolithic SRAM's, an advanced high-speed CMOS decoder and decoupling capacitors surface mounted on an epoxy laminate substrate.

A1048

Abstract: 1431 T WE 251
Contextual Info: DENSE-PAC MICROSYSTEMS 8 Megabit CMOS SRAM DPS256 X 3 2 L/DPS256 X 32 W D ESC RIPTIO N : The D PS256X32L/D PS256X32W is a 256K x 32 high density, high-speed Static Random Access M em ory SRAM module, intended for high performance computers and digital signal

68-PIN

Contextual Info: 12 Megabit High Speed CM OS SRAM D E N S E - P A C M I C R O S Y S T E M D P S 5 12 X 2 4 M F n 3 S ADVANCED INFORMATION D E S C R IP T IO N : SLCC Stack The DPS512X24MFn3 High Speed SRAM "ST A C K " modules are a revolutionary new memory subsystem using Dense-Pac

Contextual Info: DENSE-PAC MICRO SYSTEMS D7E D | 575^415 □□□□17b T 8KX8T BASED Dense-Pac Microsystems, inc. CMOS EEPROM FAMILY DESCRIPTION: The DPE8KX8T family consists of Electrically Eraseable and Reprogrammable Read-Only Memories EEPROMs with popular, easy to use features.

Contextual Info: D E N S E - P A 8 Megabit CMOS SRAM C MICROSYSTEMS DPS1MS8U DESCRIPTION: The DPS1MS8U is a 1Meg X 8 high-density, low-power static RAM module comprised of eight 128K X 8 monolithic SRAM's, an advanced high-speed CMOS decoder and decoupling capacitors surface mounted

11-365

Contextual Info: DENSE-PAC 8 MEGABIT FLASH EEPROM M I C R O S Y S T E M S DPZ512X16ln3 D PZ512X16IY3 DESCRIPTION: The D PZ512X16ln3 "STACK“" modules are a revolutionary new m em ory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC . Available in straight

Contextual Info: DENSE-PAC MICROSYSTEMS 4 Megabit High Speed CM OS SRAM D P S 5 1 2 S8 B N DESCRIPTIO N: T he DPS512S8BN is a high speed m ilita ry 512K X 8 high-density, static RAM m od ule comprised o f four high speed ceram ic 128K X 8 m o n o lith ic SRAM's, an advanced high-speed CMOS decoder and de cou pling

Supply Control LAF 0001

Abstract: laf 0001 power laf 0001 61YL RT1L 28X1 050I
Contextual Info: DENSE-PAC 2 M EGABIT FLASH EEPROM M I C R O S Y S T E M S DPZ128X161Y/l IY/IJY/l H Y/lA3 D ESCRIPTIO N : T he DPZ1 2 8 X 1 6 1Y/l IY/IJ Y/l H Y/l A3 d evice s are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Lead less Chip Carriers

DPS512X8MKN3

Contextual Info: DENSE-PAC 4 Megabit High Speed CM OS SRAM DPS512X8MKN3 MICROSYSTEMS PRELIMINARY DESC R IPTIO N : The DPS512X8MKN3 High Speed SRAM "STACK" devices are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC mounted on a co-fired

30A10

Abstract: H1163
Contextual Info: DENSE-PAC 8 Megabit CMOS DRAM MICROSYSTEMS DPD512X16M2H3 PRELIMINARY D E S C R IP T IO N : The D PD 5 1 2X16M2H3 "S T A C K " module is a re vo lu tio n ary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC stacked and leaded for surface