DP5Z Search Results

Contextual Info: DENSE-PAC MI C R O S Y S T E MS 32 Megabit FLASH EEPROM DP5Z1MW32PV3 PRELIMINARY DESCRIPTION: The DP5Z1MW32PV3 "VERSA-STACK" module is a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC mounted on a co-fired ceramic substrate. It

Contextual Info: DENSE-PAC 32 Megabit FLASH EEPROM DP5Z2MX16Nn3 M I C R O S Y S T I:. M S PRELIM IN A R Y D ESC RIPTIO N : The DP5Z2MX16Nn3 "S LC C " devices are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC . Available unleaded, straight leaded, " J " leaded, gullwing

Dense-Pac DP5Z1M

Abstract: 30A18
Contextual Info: 32 Megabit FLASH EEPROM DP5Z1MW32PV3 PRELIMINARY DESCRIPTION: The DP5Z1MW32PV3 ‘’VERSA-STACK’’ module is a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip Carriers SLCC mounted on a co-fired ceramic substrate. It

DP5Z4MX16PA3

Abstract: DP5Z4MX16PH3 DP5Z4MX16PI3 DP5Z4MX16PJ3 DP5Z4MX16PY DP5Z4MX16PY3
Contextual Info: 4Mx16, 120 - 200ns, STACK/PGA 30A161-04 B 64 Megabit FLASH EEPROM DP5Z4MX16Pn3 PRELIMINARY DP5Z4MX16PY3 DESCRIPTION: The DP5Z4MX16Pn3 ‘’SLCC’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip

amd 29f010

Abstract: DP5Z DP5Z12832VA
Contextual Info: DENSE-PAC 4 Megabit 5V CMOS Flash EEPROM MICROSYSTEMS DP5Z12832VA/DP5Z12832VAP PRELIMINARY DESCRIPTION: The DP5Z12832VA/DP5Z12832VAP is a 4 megabit 5 volt CMOS Flash EEPRO M (Electrically In-System Programmable and Erasable ROM Memory) module. The module is built with four 128K x 8 FLASH

DP5Z128X32XP/XHP

Contextual Info: 4 Megabit 5 Volt CMOS FLASH EEPROM DP5Z128X32XP/XHP DESCRIPTION: The DP5Z128X32XP/XHP is a 4 megabit 5 Volt only CMOS Flash EEPROM Electrically In-System Programmable and Erasable ROM memory module. The module is built with fo ur 12 8K x 8 FLASH memory devices. The

30A18

Contextual Info: 8 Megabit FLASH EEPROM D EN SE-PA C DP5Z1MM8NKY/Í3/H3/J3/DP5Z1MX8NKA3 M I C K OS V S T \í M S PRELIM INARY D E SC R IP T IO N : The D P5Z1MM8NKY/Í3/H3/J3/DP5Z1MX8NKA3 "S L C C " devices are a revolutionary new memory subsystem using Dense-Pac Microsystems'

DP5Z2MX16PAA3

Abstract: DP5Z2MX16PAH3 DP5Z2MX16PAI3 DP5Z2MX16PAJ3 DP5Z2MX16PAY3
Contextual Info: 32 Megabit FLASH EEPROM DP5Z2MX16PAn3 PRELIMINARY DESCRIPTION: The DP5Z2MX16PAn3 “SLCC” devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip Carriers SLCC . Available unleaded, straight leaded, “J” leaded, gullwing

DP5Z4MW16PA3

Abstract: DP5Z4MW16PH3 DP5Z4MW16PI3 DP5Z4MW16PJ3 DP5Z4MW16PY3
Contextual Info: 4Mx16, 120 - 200ns, STACK/PGA 30A161-24 A 64 Megabit FLASH EEPROM DP5Z4MW16Pn3 PRELIMINARY DP5Z4MW16PY3 DESCRIPTION: The DP5Z4MW16Pn3 ‘’SLCC’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip

FAH 32

Contextual Info: 32 Megabit FLASH EEPROM DP5Z1MW32PV3 DESCRIPTION: The DP5Z1MW32PV3 ‘’VERSA-STACK’’ module is a memory subsystem using DPAC Technologies’ ceramic Stackable Leadless Chip Carriers SLCC mounted on a co-fired ceramic substrate. It offers 32 Megabits of

Contextual Info: DENSE-PAC 32 Megabit FLASH EEPROM DP5Z2MW 16Pn3 MICROSYSTEMS PRELIMINARY DESCRIPTION: The DP5Z2M W 16Pn3 " S L C C " devices are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC . Available unleaded, straight leaded, "J" leaded, gullwing

Contextual Info: DENSE-PAC \í M I C K OS V S T 32 Megabit FLASH EEPROM DP5Z2ME16Pn3 M S PRELIMINARY DESCRIPTION: The D P 5 Z 2 M E 1 6 P n 3 "S L C C " devices are a revolutionary n e w m em ory subsystem using Dense-Pac M icrosystem s' ceram ic Stackable Lead less C hip

Contextual Info: DENSE-PAC 32 Megabit FLASH EEPROM DP5Z2MX16Nn3 MI C R C HY STEMS PRELIMINARY D E S C R IP T IO N : The D P 5Z 2 M X 16N n3 "S LC C " devices are a re volution ary new m em ory subsystem using D ensePac M icrosystem s' ceram ic Stackable Lead less C hip Carriers SLCC . A vailable unleaded, straight leaded, "J " leaded, g u llw in g

DP5Z1MM16PH3

Abstract: DP5Z1MM16PI3 DP5Z1MM16PJ3 DP5Z1MM16PY DP5Z1MW16PA3
Contextual Info: 1Mx16, 120 - 200ns, STACK/PGA 30A162-21 A 16 Megabit FLASH EEPROM DP5Z1MM16PY/I3/H3/J3/DP5Z1MW16PA3 PRELIMINARY DESCRIPTION: The DP5Z1MM16PY/I3/H3/J3/DP5Z1MW16PA3 ‘’SLCC’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’

DP5Z2MW16PA3

Abstract: DP5Z2MW16PH3 DP5Z2MW16PI3 DP5Z2MW16PJ3 DP5Z2MW16PY3
Contextual Info: 2Mx16, 120 - 200ns, STACK/PGA 30A161-22 A 32 Megabit FLASH EEPROM DP5Z2MW16Pn3 PRELIMINARY DESCRIPTION: SLCC Stack The DP5Z2MW16Pn3 ‘’SLCC’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip

amd 29f010

Abstract: CE021
Contextual Info: 4 Megabit 5V C M O S Flash EEPROM D EN SE-PAC ' ,vr M IC R O S Y S T E M S _ V DP5Z PRELIMINARY DESCRIPTION: The DP5Z12832VA/DP5Z12832VAP is a 4 megabit 5 volt CMOS Flash EEPROM (Electrically In-System Programmable and Erasable ROM

DP5Z2MW32PV3

Abstract: Dense-Pac Microsystems
Contextual Info: 64 Megabit FLASH EEPROM DP5Z2MW32PV3 PRELIMINARY DESCRIPTION: The DP5Z2MW32PV3 ‘’VERSA-STACK’’ module is a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip Carriers SLCC mounted on a co-fired ceramic substrate. It

Contextual Info: DENSE-PAC MICROSYSTEMS 64 Megabit FLASH EEPROM DP5Z4MW16Pn3 P R E L IM IN A R Y D E S C R IP T IO N : Th e D P 5 Z 4 M W 1 6 P n 3 " S L C C " devices are a revolutionary new m em ory subsystem using D ense-Pac M icrosystem s' ceram ic Stackable Leadless C h ip

11A16

Contextual Info: 32 Megabit FLASH EEPROM DP5Z1MW32PV3 DENSIE-PAC MI GR ÖS VST BMS PRELIMINARY DESCRIPTION: The DP5Z1MW32PV3 "VERSA-STACK" module is a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC mounted on a co-fired ceramic substrate. It

DP5Z2MK16PA3

Abstract: DP5Z2MK16PH3 DP5Z2MK16PI3 DP5Z2MK16PJ3 DP5Z2MK16PY
Contextual Info: 2Mx16, 120 - 200ns, STACK/PGA 30A161-02 A 32 Megabit FLASH EEPROM DP5Z2MK16Pn3 PRELIMINARY DESCRIPTION: The DP5Z2MK16n3 ‘’SLCC’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip Carriers SLCC . Available unleaded, straight leaded, ‘’J’’ leaded, gullwing

1230A1

Contextual Info: 16 Megabit FLASH EEPROM D E N S E - P A C M I C K OS V S T M S \í DP5Z1MM16PY/I3/H3/J3/DP5Z1MW16PA3 AD VAN CED IN FO RM ATIO N DESCRIPTION: The DP5Z1MM16PY/Í3/H3/J3/DP5Z1MW16PA3 "SLCC" devices are a revolutionary new memory subsystem using Dense-Pac Microsystems'

DP5Z1MM8NKH3

Abstract: 00FIH
Contextual Info: 1Mx8, 120 - 200ns, STACK/PGA 30A189-01 A 8 Megabit FLASH EEPROM DP5Z1MM8NKY/I3/H3/J3/DP5Z1MX8NKA3 PRELIMINARY DESCRIPTION: The DP5Z1MM8NKY/I3/H3/J3/DP5Z1MX8NKA3 ‘’SLCC’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’

SLCC Series

Abstract: DP5Z2MX16PA3 DP5Z2MX16PH3 DP5Z2MX16PI3 DP5Z2MX16PJ3 DP5Z2MX16PY
Contextual Info: 2Mx16, 120 - 200ns, STACK/PGA 30A161-02 1 32 Megabit FLASH EEPROM DP5Z2MX16Pn3 PRELIMINARY DESCRIPTION: The DP5Z2MX16Pn3 ‘’SLCC’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip Carriers SLCC . Available unleaded, straight leaded, ‘’J’’ leaded, gullwing

Contextual Info: DENSE-PAC 64 Megabit FLASH EEPROM DP5Z2MW32PV3 MICROSYSTEMS PRELIMINARY DESCRIPTION: The DP5Z2M W 32PV3 VERSA -STA CK module is a revolutionary new memory subsystem using Dense-Pac Microsystems ceram ic Stackable Leadless Chip Carriers SLCC mounted on a co-fired ceramic substrate. It