1024KX8 Search Results

Contextual Info: LH28Fxxx FLASH MEMORY FLASH NON-VOLATILE MEMORY FLASH E2ROM FLASH ROM READ ONLY MEMORY ETOX DUAL VOLTAGE LH28F800SUTD 8M 1024Kx8/512Kx16 3V Dual Work

Contextual Info: bq4016/bq4016Y 1024Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4016 is a nonvolatile 8,388,608-bit static RAM organized as 1,048,576 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited

EDI8F81024C

Abstract: OC98N a410c
Contextual Info: ^EDI EDI8F81024C 1Mtgx8 SRAM Module ELECTRONC DESIGNS. WC 1Megx8 Static RAM CMOS, Module Features 1024Kx8 bit CMOS Static The EDI8F81024C is a 8 Megabit CMOS Static RAM based Random Access Memory on eight 128Kx8 Static RAMs mounted on a multi-layered • Access Times 70 thru 100ns

Contextual Info: bq4016/bq4016Y 1024Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4016 is a nonvolatile 8,388,608-bit static RAM organized as 1,048,576 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited

PN-84

Contextual Info: bq4016/bq4016Y BENCHMARQ 1024Kx8 Nonvolatile SRAM Features General Description > D a ta retention in the absence of power The CM O S bq4016 is a nonvolatile 8,388,608-bit sta tic RAM organized a s 1,048,576 w ords by 8 bits. The in ­ teg ra l control circuitry an d lithium

Contextual Info: bq4016/bq4016Y 1024Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4016 is a nonvolatile 8,388,608-bit static RAM organized as 1,048,576 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited

EDI8F81024C

Abstract: EDI8F81024C100BSC EDI8F81024C70BFC EDI8F81024C70BSC EDI8F81024C85BSC
Contextual Info: EDI8F81024C 1Megx8 SRAM Module 1Megx8 Static RAM CMOS, Module Features 1024Kx8 bit CMOS Static Random Access Memory • Access Times 70 thru 100ns • Data Retention Function EDI8F81024LP • TTL Compatible Inputs and Outputs • Fully Static, No Clocks

Contextual Info: bq4016/bq4016Y 1024Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4016 is a nonvolatile 8,388,608-bit static RAM organized as 1,048,576 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited

1024Kx8

Contextual Info: EDI8F81024C White Electronic 1Mx8 Static RAM CMOS, Module FEATURES DESCRIPTION „ 1024Kx8 bit CMOS Static „ Random Access Memory • • • • Access Times 70 thru 100ns Data Retention Function EDI8F81024LP TTL Compatible Inputs and Outputs Fully Static, No Clocks

Contextual Info: bq4016/bq4016Y Il BENCHMARQ 1024Kx8 Nonvolatile SRAM Features General Description ► D ata retention in the absence of power The CMOS bq4016 is a nonvolatile 8,388,608-bit static RAM organized as 1,048,576 words by 8 bits. The in­ tegral control circuitry and lithium

1024Kx8

Contextual Info: h bq4016/bq4016Y BENCHMARQ 1024Kx8 Nonvolatile SRAM Features General Description ► D ata retention in the absence of power The CMOS bq4016 is a nonvolatile 8,388,608-bit static RAM organized as 1,048,576 words by 8 bits. The in­ teg ral control circuitry and lithium

Contextual Info: ^EDI EDI8F81024C ELECTRONIC DESIGNS IN C • Commercial Eight Megabit SRAM Module 1Megx8 Static RAM CMOS, Module Features The EDI8F81024C is a 8192K bit CMOS Static RAM 1024Kx8 bit CMOS Static based on eight 128Kx8 Static RAMs mounted on a multi­ Random Access Memory

Contextual Info: Preliminary bq4016/bq4016Y 1024Kx8 Nonvolatile SRAM Features General Description >• D ata retention in the absence of power The CMOS bq4016 is a nonvolatile 8,388,608-bit static RAM organized as 1,048,576 words by 8 bits. The in te g ra l co n tro l c irc u itry an d

Contextual Info: Preliminary BENCHMARQ b q 4 0 1 6 / b q 4 0 1 6 Y 1024Kx8 Nonvolatile SRAM Features General Description >• Data retention in the absence of power The CMOS bq4016 is a nonvolatile 8,388,608-bit static RAM organized as 1,048,576 words by 8 bits. The in­ tegral control circuitry and lithium

14552

Abstract: EDI8F81024C EDI8F81024C100BSC EDI8F81024C70BSC EDI8F81024C70BSI EDI8F81024C85BSC EDI8F81024LP100BSC EDI8F81024LP70BSC EDI8F81024LP85BSC
Contextual Info: EDI8F81024C 1Megx8 Static RAM CMOS, Module FEATURES DESCRIPTION • 1024Kx8 bit CMOS Static The EDI8F81024C is a 8Mb CMOS Static RAM based on eight 128Kx8 Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate. • Random Access Memory • Access Times 70 thru 100ns

tegra

Abstract: 1024Kx8 bq4016
Contextual Info: Preliminary bq4016/bq4016Y 1024Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4016 is a nonvolatile 8,388,608-bit static RAM organized as 1,048,576 words by 8 bits. The integral control circuitry and lithium

1024Kx8

Contextual Info: ^EDI EDI8F81024C EL fCm ON C DESIGNS N C IMegxB SRAM Module 1Klegx8 Static RAM Features CMOS, Module 1024Kx8 bit CMOS Static The EDI8F81024C is a 8 Megabit CMOS Static RAM based Random Access Memory on eight 128Kx8 Static RAMs mounted on a multi-layered • Access Times 70 thru 100ns

Contextual Info: B O ù J M AR/lilHITE TECHNOLOGY 4bE D • I S b B L T Û 00D0M2b T ■ B ü l T / ^ ^ - i3~2,5~~ White Technology FLASH PROM WTI Part Number Speeds Max Power Temperature Organization Available Dissipation Range Packages Features/Options WF-1024K8-200XX 1024Kx8

Contextual Info: bq4016/bq4016Y 1024Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4016 is a nonvolatile 8,388,608-bit static RAM organized as 1,048,576 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited

Contextual Info: bq4016/bq4016Y 1024Kx8 Nonvolatile SRAM Features ➤ Data retention in the absence of power ➤ Automatic write-protection during power-up/power-down cycles ➤ Conventional SRAM operation; unlimited write cycles ➤ 10-year minimum data retention in absence of power

cmos static ram 1mx8 5v

Abstract: EDI8F81024C EDI8F81024C100BSC EDI8F81024C70BSC EDI8F81024C85BSC EDI8F81024LP70BSC EDI8F81024LP85BSC 1024Kx8
Contextual Info: White Electronic Designs EDI8F81024C 1Mx8 Static RAM CMOS, Module FEATURES DESCRIPTION 1024Kx8 bit CMOS Static Random Access Memory • • • • Access Times 70 thru 100ns Data Retention Function EDI8F81024LP TTL Compatible Inputs and Outputs Fully Static, No Clocks

Contextual Info: bq4016/bq4016Y 1024Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4016 is a nonvolatile 8,388,608-bit static RAM organized as 1,048,576 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited

bq4016

Abstract: bq4016Y 36-PIN
Contextual Info: bq4016/bq4016Y 1024Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4016 is a nonvolatile 8,388,608-bit static RAM organized as 1,048,576 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited

IC 4025 pin diagram

Contextual Info: ^EDI EDI8F81024C E L E C T R O N IC D E S IG N S IN C . - Commercial Eight Megabit SRAM Module 1Megx8 Static RAM CMOS, Module Features The EDI8F81024C is a 8192K bit CMOS Static RAM 1024Kx8 bit CMOS Static based on eight 128Kx8 Static RAMs mounted on a multi­