0003B Search Results

DS1200

Abstract: DS1204 DS2400 DS6200 DS6201 DS6204 DS6205 DS6207 DS620X
Contextual Info: DALLAS SEMI CON DUCTOR CORP 3SE D H EblHlBO 0003b4L. Ô El DAL DS620x am M iM •«¿ÉT N * M a ÌH te ÌN M M B a i DS620X CyberKey SEMICONDUCTOR - T ' C , 3 . f5 T jr v ' ¡¿ â n à iâ a à FEATURES PACKAGE/PIN DESCRIPTION • G rea ter than 5 0 ,0 0 0 cycle connector life

TMPT6429

Contextual Info: ALLEGRO MICROSYSTEMS INC 8 5 1 4 0 1 9 SP RA GU E. ^3 D • 0504330 0003b0L 4 ■ AL6R S E M I C O N D S / ICS 93 D 0 3 6 0 6 J . SMALL-OUTLINE BIPOLAR TRANSISTORS NPN Transistors ELECTRICAL CHARACTERISTICS at TA = 25°C IcBO 40 30 40 60 40 40 25 40 30 25

Contextual Info: 0003b2fi HSt HPKJ PIN Silicon Photodiodes 3 Range Peak Sensitivity Wavelength À A p (nm) (nm) Spectral Dimensional Type No. Outline Package (P.42,43) Active Area Effective Size Active Area (mm) ( m m 2) 2.77X2.77 7.7 S2506-02 • S2506-04 S4707-01 S5077

TP4119

Abstract: 2n3819 field-effect transistors nj132 TP3823 TP3370 TP4392 2N3819 NJ16 NJ32 TP3369
Contextual Info: 6513650 S PR AG UE /SE NICOND GROUP 8 5 1 4 0 1 9 S P RA GU E, SEMICONDS/ICS 0003b00 4 93 D 03600] 7"- PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C VgS oH) V(flR)GSS Limits Igss Max. (nA) Device Tin*

SCR SN 102

Abstract: SCR SN 101 RC snubber ac motor SN 101 SCR W614 1134 scr back to back scr
Contextual Info: MACNECRAFT ELECTRIC CO 5flE 5707101 0003bSb 3fl4 HIGH R E LIA B ILIT Y TYPE AC C O N T R O LLE D 90-280 VAC or 80-140 VD C IN PU T 50/60 Hz AC O U T P U T C LASS 6 AC C O N T R O L L E D IN PU T AC SCR O UTPUT S O LID STATE RELAYS j 1 H ig h T ra n s ie n t C a p a b ility — Single out­

Contextual Info: ALLEGRO MICROSYSTEMS INC TB ] • 0504330 0003bS5 b ■ ALGR r - 9 )• O i PROCESS BLA Process BLA NPN High-Voltage Transistor The NPN process BLA transistor is a double­ diffused silicon epitaxial planar device used primarily in video circuits and similar high-voltage, low-current

T3D 35 zener DIODE

Abstract: T3D zener DIODE t3d 99 diode diode zener t3d 23 T3D 91 DIODE T3D 95 Diode T3D 82 T3D 65 diode T3D 82 diode ZENER DIODE T3D
Contextual Info: SPR AGU E/SENIC OND GROUP 8 5 1 4 0 1 9 SPRAGUE. 13 D • 0513050 0003b54 7 ■ 93D 0 3624 I S E M I C O N D S /ICS DIODE CHIPS T H Z ’ S eries ‘W Zener Diodes ELECTRICAL CHARACTERISTICS at Tfl = 25°C Device Type Min. V Nom. (V) Max. (V) («Iff (mA)

2SC4663

Abstract: TP5V20FS
Contextual Info: i iv y - _ _ . F S SerieS Switching Power Transistor I W ß \f>£l3] 5a 2SC4663 NPN CTP5V20FS) — • - Ô2n3fi? 0003b3fl êOT Outline Dimensions A b s o lu te M axim um R a tin g s m Item i IE # Symbol Storage Temperature Junction Temperature a U9 9 ■

Contextual Info: ONE AND FOUR ELEMENT LED ARRAYS LITEM: L T L -5 x 3-14 SERIES LTL-5 x 3-11 SERIES TAIWAN LITON ELECTRONIC 4^E D • 00351^5 0003b53 SflT ITLIT FEATURES • D E S IG N E D FO R EASE IN C IR C U IT BOARD A SSEM BLY. •B L A C K C ASE • D E S IG N E D ENHANCES

Contextual Info: SUPERTEX INC ^ blE D • 67732^5 0003bS2 1 % Supertax ine. *STX HV9124 HV9127 Objective High-Voltage Current-Mode PWM Controller Ordering Information Max Duty Cycle 16 Pin Plastic DIP 49% HV9124P HV9124C HV9124PJ 99% HV9127P HV9127C HV9127PJ Package O ptions

Contextual Info: - GOLDSTAR TECHNOLOGY IN C / Sb E . D • MG2Ô7S7 0003bS3 . . . . . . SQM B I G S T SEMI-CUSTOM 1C □ HCMOS STANDARD CELL - GENERAL DESCRIPTION

ECG940

Abstract: ECG941 philips pit ECG940 equivalent
Contextual Info: PHILIPS E C A G A AA A • C f mI S \ VV t G 1?E D INC tbSBIEfl 0003bt.û 5 ■ ^ ECG940 -v L H FET INPUT OPERATIONAL AMPLIFIER semiconductors • • • • • • ■ HIGH INPUT IMPEDANCE . . . 1,000,000 Mn HO FREQUENCY COMPENSATION REQUIRED SHORT-CIRCUIT PROTECTION

Contextual Info: MAGNECRAFT ELECTRIC CO SflE D 5707101 0003bSb 3fl4 • MGF HIGH RELIABILITY TYPE AC CONTROLLED 90-280 VAC or 80-140 VDC INPUT 50/60 Hz AC OUTPUT CLASS 6 AC CONTROLLED INPUT AC SCR OUTPUT SOLID STATE RELAYS High Transient Capability— Single out­ put features back to back SCR's and

T3D DIODE

Abstract: T3D 45 diode diode T3D diode T3D 25 T3D 40 DIODE Diode T3D 08 T3D 18 diode T3D 77 diode Diode T3D 30 Diode T3D 35
Contextual Info: S P RAG UE /S EM IC ON D GROUP 8 5 14019 SPRAGUE, D • S E M I C O N D S / ICS 0513550 0003b27 S 93 D 0 3 6 2 7 SMALL-OUTLINE DIODES i ‘TMPD’ General-Purpose and Low-Leakage Diodes ELECTRICAL CHARACTERISTICS at TA = 25°C VF Device Type »rr Max. ns

PF3820

Contextual Info: AL LE GRO MICROSYSTEMS 8 5 1 4 0 1 9 S P RA GU E. INC <Ì3 D • 0S0433Ô S E M I C O N D S / ICS 0003bl5 T ■ AL6R 3 93 D 03 6 1 2 SMALL-OUTLINE JUNCTION FIELD-EFFECT TRANSISTORS P-Channel JFETs ELECTRICAL CHARACTERISTICS at TÄ = 25°C V gsío hj ^ BHIGSS

Contextual Info: SIPEX CORP bOE D C lr > A v % • 3283711 0003b75 4bfl « S P X HS574A ^ lk A * A * Corporations S IG N A L PRO CESSING EXCELLENCE COMPLETE 12-BIT, 25uSEC A/D CONVERTER WITH INTERFACE FEATURES ■ Complete 12-bit A/D converter with sample-hold, reference, clock, and three state

RETICON

Abstract: reticon photodiode array RA3812P RETICON diode array 456 diode EGG RETICON RA3812 reticon photodiode array sensor photodiode reticon
Contextual Info: E G & G RETICON II c /5 n /3 47E D • 3Ü3073Ö D F T /r n A / 0003b2E 7 RET RA3812P Solid State Image Sensor Array Introduction 16 The Reticon RA3812P is a two-dimensional self-scanned optical sensor array consisting of 456 silicon photodiodes in a 38 x 12 matrix. This device is a functional equivalent to low

Contextual Info: AL L E G R O MICROSYSTEMS INC T3 » • 0504330 0003bôl 7 ■ ALGR T-91-01 PROCESS DMA Process DMA NPN Small-Signal Transistor Process DMA is a double-diffused NPN silicon epitaxial planar device designed for use in VH F and UHF amplifiers, mixers, and oscillators.

71342S

Abstract: IDT71342S35
Contextual Info: INTEGRATE» DEVICE 14E D m 4355771 0003b07 4 IDT 71342S IDT 71342L CMOS D.UAL-PORT RAM 32K 4 K x 8-BIT WITH SEMAPHORE T - H 6 - 2 3 -3 1 DESCRIPTION: FEATURES: TTie IDT71342 Is an extremely high-speed 4K x 8 dual-port static RAM with full on-chip hardware support of semaphore signalling

S2840

Contextual Info: • 4 2 2 ^ 0 "I 0003b5G TT2 ■ HPKJ Related Products PHOTOTRANSISTORS The phototransistor gives a large output current as compared to photodiodes. Hamamatsu supplies high-sensitivity phototransistors based on its long experience with opto-semiconductor technology.

LR41729

Abstract: 231D-4-5 231D-4-12
Contextual Info: SSR SOLID STATE BELAY h a g n e c r a f t e l e c t r i c HGF 5707101 0003bSE 73T SflE D co C L A S S 231 I 4 AM PS S P S T — NO D C IN P U T S AC OUTPUTS Z E R O C R O S S IN G UL R E C O G N IZ E D FILE NO. E52197 231D 4 AMP C S A CER TIFIED FILE NO. LR41729

Contextual Info: rSTOKO TK702XX 1.03 V REGULATOR WITH ON/OFF SWITCH FEATURES APPLICATIONS • Low Input Voltage Operation Single Battery Cell ■ Internal PNP Transistor ■ Pagers ■ Built-In Shutdown Control (Off Current, 8 |iA Typ) ■ Low Dropout Voltage (30 mV Typ)

77761-1

Contextual Info: Ordering number : ENN*7776 CMOS IC LC877448A/40A/32A/24A 8 Bit Single Chip Microcontroller Incorporating 48K/40K/32K/24K Byte ROM and 1536 Byte RAM on Chip Preliminary Overview Package Dimensions The LC877448A, LC877440A, LC877432A and LC877424A are 8 bit single chip microcontrollers

Contextual Info: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion