25P0 Search Results

Contextual Info: Schem atic: Electrical Specifications: s o l at i on V o l t ag e : 1500 s o l at i on V o l t ag e : 500 Turns Ratio: TX Vrms Vrnns 1CT:1CT CABLE SIDE OCL: Cw/w: 25p0 Max RX to 1CT: 1CT Minimum @100KHz to P1+2 + 5 ±5% 550uH DC Res. (Line Side : nsertion

25P06Q

Contextual Info: SCHOTTKY BARRIER DIODE 27.; a /5 0 ~ 6 0 v f 25posqs f 25P06qs • 3.K.122 MAX FEATURES •J.8U89 _10.3C405»_ 3.41.134) MAX / m i w DIA MAXi o Similar to TO-220AB Case, Fully Molded Isolation / 2.85Ç112) 2.55 l<5üi o Dual Diodes - Cathode Common ° Low Forward Voltage Drop

25p05

Abstract: 25P06 Motorola 3-351 MOSFET S 1550 N motorola diode 739 SC189
Contextual Info: M O T OR OL A SC X S T R S /R IM E 0 I F MOTOROLA b3fc>7554 O G flT llS b | -r-3 • I SEM ICONDUCTOR TECHNICAL DATA M T H 25P 05 M T H 25P 06 M TM 25P05 M TM 25P06 Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r P-Channel Enhancement-Mode Silicon Gate T M O S

25P04Q

Contextual Info: SCHOTTKY BARRIER DIODE C 25P03Q C 25 P04Q 2 7 .7 A / 3 0 ~ 4 0 V FEATURES °Similar to TO-247AC TO-3P Case ° Dual Diodes - Cathode Common ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability ° 20 Volts thru 100 Volts Types Available

25P03L

Abstract: 25p03lg 03lg 369D AN569 NTD25P03L NTD25P03L1 NTD25P03L1G NTD25P03LG NTD25P03LT4G
Contextual Info: 25P03L Power MOSFET −25 Amp, −30 Volt Logic Level P−Channel DPAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source−to−drain diode recovery time is comparable to a discrete fast

25P03L

Abstract: AN569 NTD25P03L NTD25P03L1 NTD25P03LT4
Contextual Info: 25P03LT4 Advance Information Power MOSFET 25 Amps, 30 Volts, Logic Level P-Channel DPAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source-to-drain diode recovery time is comparable to a discrete fast

2N5417

Abstract: A 14U UD3008 2N5292 BD263 BD264A CI44 transistor t05 BC412 KIS434
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

MHT5002

Abstract: ST 2N3053 D28A9 D11C211B20 DC5501 DC6112B MD20 MM4645 MT75 BFS86
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. t - 40°c * - 45°C H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

STC1015E

Abstract: DTS104 ASY82 DTS103 DTS106 DTS108 NKT12
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

DTS108

Abstract: L30C DTS103 DTS106 2SC5250 2sd222 UP 130 L10B
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

MA7805

Abstract: BC128 2S746 BSY37 2S745 2SC183 OC740 PMT120 SAC40
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,

X55a

Abstract: 2sc283 PET8004 BF123 MT1060 310M GW 9n BFW74 2N744 POWER DISS BFW76
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,

25p10v6

Abstract: 25p05av 25p05v6 25p10av 25p10v 25p05v 25p05a marking 25P10AV 25p10 TOPSIDE MARKING STMicroelectronics
Contextual Info: AN1511 APPLICATION NOTE Ensuring Compatibility Between M25P10 to M25P10-A and 25P05 to 25P05-A in Your Application STMicroelectronics is constantly improving its technology. The 1 Mbit M25P10, and 512 Kbit 25P05, Serial Flash memory devices are being upgraded from our 0.35 µm T6X fabrication process to our new

MA3232

Abstract: BF123 CA3036 FT4017 2n1613 replacement A431 BF121 BVEBO-15V DIODE SJ 98 DM01B
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2N5036

Abstract: TRANSISTOR BV 32 2N5035 2N5034 FZJ 101 usaf516es047m 2N5034 package 2N5425 B170000 fzj 165
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

M-8124

Abstract: usaf516es047m usaf517es060m transistor af138 BA109 FZJ 131 2SA314 987T1 988T1 989T1
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,

2n1841

Abstract: 78m5 2SA248 2SA478 2N2234 transistor m014 2SC23 2SC24 2SC437 2SC438
Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT

2S711

Abstract: NS437 A1380 transistor CI44 MM1758 T05 Package transistor t05 TZ7003 BC412 KIS434
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2SD2350

Abstract: usaf521es071m BD112 BD116 BD251 2SD234Y 2N5017 description BD145 T062 MHT5906
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

transistor b1154

Abstract: B1154 10PE1 2N2962 2N1103 ASY13-2 GET116 2SC5220 AFY11 ASY12
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2sa648 transistor

Abstract: usaf516es047m STC5204 usaf517es060m 2SA614 ST9001 usaf516es048m STC5610 st*5519 BD538
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

2SC114 transistor

Abstract: transistor 2SC114 2SC114 BSS43 D28A9 FZJ 101 FZJ 131 VX3866 MHT5001 usaf516es047m
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

2N2886

Abstract: FZJ 131 2SC15-1 2SC111 usaf516es047m 2SC109 BF119 BF140 j-120 2SC153
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,

D634 transistor

Abstract: 2N907 PNP 2sa648 transistor STC5202 2SA614 2SA616 2SA653 2P424 SE9573 B0536
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I