M25P10 Search Results

AN1995

Abstract: M25P10-A ufdfpn8
Contextual Info: M25P10-A 1 Mbit, serial Flash memory, 50 MHz SPI bus interface Features • 1 Mbit of Flash memory ■ Page Program up to 256 bytes in 1.4 ms (typical) ■ Sector Erase (256 Kbit) in 0.65 s (typical) ■ Bulk Erase (1 Mbit) in 1.7 s (typical) ■ 2.3 to 3.6 V single supply voltage

25p10v6

Abstract: 25p05av 25p05v6 25p10av 25p10v 25p05v 25p05a marking 25P10AV 25p10 TOPSIDE MARKING STMicroelectronics
Contextual Info: AN1511 APPLICATION NOTE Ensuring Compatibility Between M25P10 to M25P10-A and M25P05 to M25P05-A in Your Application STMicroelectronics is constantly improving its technology. The 1 Mbit M25P10, and 512 Kbit M25P05, Serial Flash memory devices are being upgraded from our 0.35 µm T6X fabrication process to our new

M25P16 driver

Abstract: M25PXX M25P32 M25P16 M25P10A AN2082 M25P64 spi flash m25pxx M25P20 M25P40
Contextual Info: AN2082 APPLICATION NOTE Software Drivers for the M25Pxx Serial Flash Memories This Application Note provides library source code in C for the M25P05A, M25P10A, M25P20, M25P40, M25P80, M25P16, M25P32 and M25P64 Serial Flash memories, which use interfaces close to the new

serial flash M25P10

Contextual Info: M25P10 1 Mbit, Low Voltage, Serial Flash Memory With 20 MHz SPI Bus Interface PRELIMINARY DATA FEATURES SUMMARY • 1 Mbit of Flash Memory ■ Page Program up to 128 Bytes in 3 ms (typical) ■ Sector Erase (256 Kbit) in 1 s (typical) ■ Bulk Erase (1 Mbit) in 2 s (typical)

AI020

Abstract: ST M25P10 M25P10
Contextual Info: M25P10 1 Mbit Low Voltage Paged Non-Volatile Memory With 20 MHz Serial SPI Bus Interface PRELIMINARY DATA • 1 Mbit PAGED Non Volatile Memory ■ 128 BYTE PAGE PROGRAM IN 3 ms TYPICAL ■ 256 Kbit SECTOR ERASE IN 1 s TYPICAL ■ BULK ERASE IN 2 s TYPICAL

AN1995

Abstract: M25P M25P10-A marking 2S8
Contextual Info: M25P10-A 1 Mbit, serial Flash memory, 50 MHz SPI bus interface Features „ 1 Mbit of Flash memory „ Page Program up to 256 bytes in 1.4 ms (typical) „ Sector Erase (256 Kbit) in 0.65 s (typical) „ Bulk Erase (1 Mbit) in 1.7 s (typical) SO8 (MN) 150 mil width

M25P10

Abstract: ST M25P10 SO8 Wide Package QRFS0001 ATM-.100 M25P
Contextual Info: QRFS0001 QUALIFICATION REPORT M25P10 Using CMOST6X-U35 Technology at Agrate R1 Fab Table 1. Product and Process being Qualified Product M25P10 Package SO8 Process CMOST6X-U35 Fab Line Agrate R1 PRODUCT DESCRIPTION The M25P10 is a 1 Mbit 128K x 8 bit Low Voltage, Paged Flash Memory, accessed by a 20 MHz SPI

150mil

Abstract: WINBOND Serial flash cross reference SST25LF040-33-4C-S2A M25P80-VMW6G SST25LF080-33-4C-S2AE AT25F4096N W25P40VSNIG SST25LF020-33-4C-SAE w25p20vsnig 200mil
Contextual Info: Serial Flash Cross Reference Package Density ST Micro 8-pin SOIC 150mil 8-pin SOIC 150mil Green 1M-bit M25P10-AVMN6 SST25VF010-20-4C-SA M25P10-AVMN6G SST25VF010-20-4C-SAE AT25F1024AN-10SU-2.7 W25P10VSNI W25P10VSNIG 8-pin SOIC 150mil 8-pin SOIC 150mil Green

VDFPN8

Abstract: M25P10 M25P10-A ST10 VDFPN
Contextual Info: M25P10-A 1 Mbit, Low Voltage, Serial Flash Memory With 40 MHz SPI Bus Interface FEATURES SUMMARY • 1 Mbit of Flash Memory ■ Page Program up to 256 Bytes in 1.4ms (typical) ■ Sector Erase (256 Kbit) in 0.8s (typical) ■ Bulk Erase (1 Mbit) in 2.5s (typical)

M25P10-A

Abstract: M25P10 ST10
Contextual Info: M25P10-A 1 Mbit, Low Voltage, Serial Flash Memory With 25 MHz SPI Bus Interface FEATURES SUMMARY • 1 Mbit of Flash Memory ■ Page Program up to 256 Bytes in 1.5ms (typical) ■ Sector Erase (256 Kbit) in 2 s (typical) ■ Bulk Erase (1 Mbit) in 3 s (typical)

AN1995

Abstract: VDFPN8 package M25P10-A vdfpn8
Contextual Info: M25P10-A 1 Mbit, serial Flash memory, 50 MHz SPI bus interface Features • 1 Mbit of Flash memory ■ Page Program up to 256 bytes in 1.4 ms (typical) ■ Sector Erase (256 Kbit) in 0.65 s (typical) ■ Bulk Erase (1 Mbit) in 1.7 s (typical) ■ 2.3 to 3.6 V single supply voltage

AN1511

Abstract: M25P10 M25P10-A ST10 serial flash M25P10
Contextual Info: M25P10 1 Mbit, Low Voltage, Serial Flash Memory With 20 MHz SPI Bus Interface NOT FOR NEW DESIGN FEATURES SUMMARY This device is now designated as “Not for New Design”. Please use the M25P10-A in all future designs as described in application note AN1511 .

AN1995

Abstract: M25P10-A ST10
Contextual Info: M25P10-A 1 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 1 Mbit of Flash Memory Page Program up to 256 Bytes in 1.4ms (typical) Sector Erase (256 Kbit) in 0.8s (typical) Bulk Erase (1 Mbit) in 2.5s (typical)

SO8 Wide Package

Abstract: M25P10 QRFS0002
Contextual Info: QRFS0002 QUALIFICATION REPORT M25P10 Using CMOST6X-U35 Technology at Catania M5 Fab Table 1. Product and Process being Qualified Product M25P10 Package SO8 Process CMOST6X-U35 Fab Line Catania M5 PRODUCT DESCRIPTION The M25P10 is a 1 Mbit 128K x 8 bit Low Voltage, Paged Flash Memory, accessed by a 20 MHz SPI

serial flash M25P10

Abstract: M25P10 ST10
Contextual Info: M25P10 1 Mbit Low Voltage Paged Flash Memory With 20 MHz Serial SPI Bus Interface PRELIMINARY DATA • 1 Mbit PAGED Flash Memory ■ 128 BYTE PAGE PROGRAM IN 3 ms TYPICAL ■ 256 Kbit SECTOR ERASE IN 1 s TYPICAL ■ BULK ERASE IN 2 s TYPICAL ■ SINGLE 2.7 V to 3.6 V SUPPLY VOLTAGE

Contextual Info: M25P10 1 Mbit, Low Voltage, Serial Flash Memory With 20 MHz SPI Bus Interface PRELIMINARY DATA FEATURES SUMMARY • 1 Mbit of Flash Memory ■ Page Program up to 128 Bytes in 3 ms (typical) ■ Sector Erase (256 Kbit) in 1 s (typical) ■ Bulk Erase (1 Mbit) in 2 s (typical)

Contextual Info: M25P10-A 1 Mbit, Low Voltage, Serial Flash Memory With 25 MHz SPI Bus Interface FEATURES SUMMARY • 1 Mbit of Flash Memory ■ Page Program up to 256 Bytes in 2 ms (typical) ■ Sector Erase (256 Kbit) in 2 s (typical) ■ Bulk Erase (1 Mbit) in 3 s (typical)

AN1995

Abstract: M25P10-A ST10
Contextual Info: M25P10-A 1 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 1 Mbit of Flash Memory Page Program up to 256 Bytes in 1.4ms (typical) Sector Erase (256 Kbit) in 0.8s (typical) Bulk Erase (1 Mbit) in 2.5s (typical)

M25P10

Abstract: M25P10-A ST10
Contextual Info: M25P10-A 1 Mbit, Low Voltage, Serial Flash Memory With 25 MHz SPI Bus Interface PRELIMINARY DATA FEATURES SUMMARY • 1 Mbit of Flash Memory ■ Page Program up to 256 Bytes in 2 ms (typical) ■ Sector Erase (256 Kbit) in 2 s (typical) ■ Bulk Erase (1 Mbit) in 3 s (typical)

STR71x

Abstract: serial flash M25P10 AN1810 M25P10-A c instruction set for serial communication using c stmicroelectronics Serial Flash Memory Device M25-I
Contextual Info: AN1810 APPLICATION NOTE STR71x BSPI COMMUNICATION WITH M25P10-A SERIAL FLASH INTRODUCTION The aim of this application note is to present a practical example of communication using the BSPI peripheral of the STR71x. It shows an easy way of communicating between a STR71x microcontroller and a M25P10-A

serial flash M25P10

Abstract: M25P10 ST10
Contextual Info: M25P10 1 Mbit Low Voltage Paged Flash Memory With 20 MHz Serial SPI Bus Interface PRELIMINARY DATA • 1 Mbit PAGED Flash Memory ■ 128 BYTE PAGE PROGRAM IN 3 ms TYPICAL ■ 256 Kbit SECTOR ERASE IN 1 s TYPICAL ■ BULK ERASE IN 2 s TYPICAL ■ SINGLE 2.7 V to 3.6 V SUPPLY VOLTAGE

Contextual Info: M25P10A Serial Flash Embedded Memory Features M25P10A 1Mb 3V Serial Flash Embedded Memory Features • Electronic signature – JEDEC-standard 2-byte signature 2011h – RES command, 1-byte signature (10h) for backward compatibility • More than 20 years data retention

M24Cxx

Abstract: STR71x STA2051 STR71 Serial communication I2C in flash memory spi 0x0008 AN1810 M25P10-A c instruction set for serial communication using c
Contextual Info: AN1810 APPLICATION NOTE STR71x BSPI COMMUNICATION WITH M25P10-A SERIAL FLASH INTRODUCTION The goal of this application note is to present a practical example of communication using the BSPI peripheral of the STR71x. It shows an easy way of communicating between a STR71 microcontroller and a M25P10-A

AN1995

Abstract: vdfpn8 M25P10-A
Contextual Info: M25P10-A 1 Mbit, low voltage, Serial Flash memory with 50MHz SPI bus interface Feature summary • 1 Mbit of Flash Memory ■ Page Program up to 256 Bytes in 1.4ms (typical) ■ Sector Erase (256 Kbit) in 0.8s (typical) ■ Bulk Erase (1 Mbit) in 2.5s (typical)