25P06 Search Results

25P06Q

Contextual Info: SCHOTTKY BARRIER DIODE 27.; a /5 0 ~ 6 0 v f 25posqs f 25P06qs • 3.K.122 MAX FEATURES •J.8U89 _10.3C405»_ 3.41.134) MAX / m i w DIA MAXi o Similar to TO-220AB Case, Fully Molded Isolation / 2.85Ç112) 2.55 l<5üi o Dual Diodes - Cathode Common ° Low Forward Voltage Drop

25p05

Abstract: 25P06 Motorola 3-351 MOSFET S 1550 N motorola diode 739 SC189
Contextual Info: M O T OR OL A SC X S T R S /R IM E 0 I F MOTOROLA b3fc>7554 O G flT llS b | -r-3 • I SEM ICONDUCTOR TECHNICAL DATA M T H 25P 05 M T H 25P 06 M TM 25P05 M TM 25P06 Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r P-Channel Enhancement-Mode Silicon Gate T M O S

k 3561 MOSFET

Abstract: TP5N05 BUZ80a equivalent p20n50 P12N08 nx 9120 TP3N40 FD1Z0 IRFZ22 mosfet th15n20
Contextual Info: 1 Selection by Package The product listed in Tables 1 through 22 have been com­ piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained by contacting a Motorola sale office in your area or by con­

25P06G

Abstract: NVB25P06 25p06
Contextual Info: 25P06, 25P06 Power MOSFET −60 V, −27.5 A, P−Channel D2PAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. Features http://onsemi.com • AEC Q101 Qualified − 25P06

H118

Abstract: F25P05QS F25P06QS
Contextual Info: SCHOTTKY BARRIER DIODE F25P05QS 25P06QS 2 7 .7 A /5 0 — 60V FEATURES ° Similar to TO-220AB Case, Fully Molded Isolation o Dual Diodes - Cathode Common ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability o 30 Volts through 100 Volts Types Available

IRFD1Z3 equivalent

Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not

25p05

Abstract: TH25P06 25P06 MTH75 25p0 MTH25P06
Contextual Info: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA MTH25P05 25P06 MTM25P05 25P06 Designer's Data Sheet Power Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate TM OS TMOS POWER FETs 25 AMPERES rDS on = 0.14 OHM 50 and 60 VOLTS T h e s e T M O S P o w e r F E T s a re d e s ig n e d fo r h ig h s p e e d p o w e r

Contextual Info: 25P06, 25P06 Power MOSFET −60 V, −27.5 A, P−Channel D2PAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. Features http://onsemi.com • AEC Q101 Qualified − 25P06

25P05

Abstract: MTH25P06 25P06 MTM25P06 AN569 MTH25P05 MTM25P05 ph-15 diode
Contextual Info: — Order this data sheet .m by MOTOROLA MTH25P051D SEMICONDUCTOR TECHNICAL DATA Data Sheet Designer’s Field Effect Transistor Power P-ChannelEnhancement-Mode Silicon Gate TMOS These TMOS Power FETs are designed for high speed power switching applications such as switching regulators, converters,

25P06G

Abstract: NTB25P06T4G 25p06 NTB25P06 NTB25P06G NTB25P06T4
Contextual Info: 25P06 Power MOSFET −60 V, −27.5 A, P−Channel D2PAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. Features http://onsemi.com • Pb−Free Packages are Available Typical Applications

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle