25p05
Abstract: TH25P06 25P06 MTH75 25p0 MTH25P06
Contextual Info: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA MTH25P05 MTH25P06 MTM25P05 MTM25P06 Designer's Data Sheet Power Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate TM OS TMOS POWER FETs 25 AMPERES rDS on = 0.14 OHM 50 and 60 VOLTS T h e s e T M O S P o w e r F E T s a re d e s ig n e d fo r h ig h s p e e d p o w e r
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100ccy145m25p05th25p06+425p06mth7525p0mth25p06
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MFE9200
Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
Contextual Info: MOTOROLA SC XSTRS/R IM E F D | b3b?254 O O fl'ìB n 1 | Selection by Package by contacting a Motorola sale office In your area or by con tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com
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dk101/do-22qi0020-hmfe9200+9buz84abuz90 equivalentirf150 mosfet amp circuitbuz35smtp40n06mirfz22 mosfet1rf620mtm12n10lmtp25n10e
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MTH13N50
Abstract: 218AC MTH6K MTH20P08 MTH35N06 MTH35N15 MTH50N05E MTH8N90 TO218AC MTH15N35
Contextual Info: - m m £ tt * Vos or € £ Vg s V W. (Ta=25‘ C) ÍD Ig s s Pd Vg s Jd s s th) xi fà ft 1D S ( o n ) Vd s = 'te (V) * /CH * /CH (A) (W) (nA) Vg s (V) (HA) Vd s (V) min m ax (V) (V) g fs iD(on) Ciss Coss Crss & m m n V g s =0 (max) Id (mA) *typ (0) Vg s
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mth6k90o-218acmtk8p18t0-218ac+14mth8p20hth13n45mth40n05mth40n06mth13n50218acmth6kmth20p08mth35n06mth35n15mth50n05emth8n90to218acmth15n35
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1RFZ40
Abstract: 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50
Contextual Info: MOTOROLA SC X S T R S /R IME D | F b3b?2S4 Q O fl' iB n 1 | J l 9 / - 6 0 Selection by Package The product listed in Tables t through 22 have been com piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained
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dk101/d0020-frj1rfz401rf150+8mtp25n10emth7n50 transistormtp35n06ebuz80a equivalentbuz90 equivalentmtp40n06mmfe9200mth7n50
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20N15
Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
Contextual Info: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.
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20n1535n05mje13002 to92ur3060+5an803 motorola2n6823isolated dc-dc mc34063mje12007motorola switchmode 1 special
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IRFD1Z3 equivalent
Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with out further notice to any products herein to improve reliability, function or design. Motorola does not
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vp1204ntp8p085001dvp1206n+141208n5002d1209nvp1209nirfd1z3 equivalent8n60 equivalenttp8n20tp8n10siemens semiconductor manualwhat is comparable with irf 32052n6823irf8408mtm5n90 designers datasheetsmps cook circuit
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25P05
Abstract: MTH25P06 25P06 MTM25P06 AN569 MTH25P05 MTM25P05 ph-15 diode
Contextual Info: — Order this data sheet .m by MOTOROLA MTH25P051D SEMICONDUCTOR TECHNICAL DATA Data Sheet Designer’s Field Effect Transistor Power P-ChannelEnhancement-Mode Silicon Gate TMOS These TMOS Power FETs are designed for high speed power switching applications such as switching regulators, converters,
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mth25p051d25p05d782bie200+7mth25p0625p06mtm25p06an569mth25p05mtm25p05ph-15 diode
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25p05
Abstract: 25P06 Motorola 3-351 MOSFET S 1550 N motorola diode 739 SC189
Contextual Info: M O T OR OL A SC X S T R S /R IM E 0 I F MOTOROLA b3fc>7554 O G flT llS b | -r-3 • I SEM ICONDUCTOR TECHNICAL DATA M T H 25P 05 M T H 25P 06 M TM 25P05 M TM 25P06 Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r P-Channel Enhancement-Mode Silicon Gate T M O S
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25p0525p06motorola 3-351mosfet s 1550 n+2motorola diode 739sc189
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