MTM25P05 Search Results

Contextual Info: MTM25P05 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)20 I(D) Max. (A)25 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)

25p05

Abstract: TH25P06 25P06 MTH75 25p0 MTH25P06
Contextual Info: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA MTH25P05 MTH25P06 MTM25P05 MTM25P06 Designer's Data Sheet Power Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate TM OS TMOS POWER FETs 25 AMPERES rDS on = 0.14 OHM 50 and 60 VOLTS T h e s e T M O S P o w e r F E T s a re d e s ig n e d fo r h ig h s p e e d p o w e r

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

MFE9200

Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
Contextual Info: MOTOROLA SC XSTRS/R IM E F D | b3b?254 O O fl'ìB n 1 | Selection by Package by contacting a Motorola sale office In your area or by con­ tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com­

1RFZ40

Abstract: 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50
Contextual Info: MOTOROLA SC X S T R S /R IME D | F b3b?2S4 Q O fl' iB n 1 | J l 9 / - 6 0 Selection by Package The product listed in Tables t through 22 have been com­ piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained

20N15

Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
Contextual Info: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.

IRFD1Z3 equivalent

Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not

25P05

Abstract: MTH25P06 25P06 MTM25P06 AN569 MTH25P05 MTM25P05 ph-15 diode
Contextual Info: — Order this data sheet .m by MOTOROLA MTH25P051D SEMICONDUCTOR TECHNICAL DATA Data Sheet Designer’s Field Effect Transistor Power P-ChannelEnhancement-Mode Silicon Gate TMOS These TMOS Power FETs are designed for high speed power switching applications such as switching regulators, converters,

TO204AE

Abstract: MTM55N10 MTM25N06L MTM45N12 MDT 1200 MTM25N05L MTM35N05 MTM50N05E 251C MTM20N15
Contextual Info: - m m £ *± A Vd s or £ t II £ Vg s V Id (V) MTM20N15 MOT N 150 + 20 MTM2DP06 MOT P -60 ± 2 0 I dss IGSS Pd * /CH Vd g 3 fê (Ta-25°G) V g s th> min * /CH (W) (A) 201 (nA) Vg s (V) (m a Vd s (V) ) 150 500 20 250 -20 125 ±100 ±20 -200 % (V) i o (on)

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

25p05

Abstract: 25P06 Motorola 3-351 MOSFET S 1550 N motorola diode 739 SC189
Contextual Info: M O T OR OL A SC X S T R S /R IM E 0 I F MOTOROLA b3fc>7554 O G flT llS b | -r-3 • I SEM ICONDUCTOR TECHNICAL DATA M T H 25P 05 M T H 25P 06 M TM 25P05 M TM 25P06 Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r P-Channel Enhancement-Mode Silicon Gate T M O S