256K 16BIT DRAM ZIP Search Results

hitachi hn27c256

Abstract: hm514280 256K RAM HM62256 1M x 16-Bit x 4 Banks synchronous sRAM BLS 16K-X hitachi HM6264 Hitachi 32k static RAM 16M x8 55ns 72 pin flash dimm sop-40 16-bit hm6264 application note
Contextual Info: HITACHI Memory Devices CONTENTS • • • • VOLATILE - Dynamic RAM •Fast Page Mode •EDO •Synchronous - Dynamic RAM Modules - Static RAM 10 NON VOLATILE - EPROM - EEPROM / Flash - MaskROM 12 14 15 2 APPLICATION SPECIFIC - Video RAM - FIFO / LINE / Frame RAM /

LA 8512

Abstract: samsung dram 1M - FLASH PCMCIA linear card samsung memory rom 1K x8 SRAM 1m X 8 dip 1M - PCMCIA linear card SAMSUNG 256K x 16bit DRAM 30 pin SIP dram memory TSOP 44 Package nand memory
Contextual Info: FUNCTION GUIDE MEMORY ICs 4. ORDERING INFORMATION 4.1 DRAM KM 4 X X XXXXX X X X - XX DRAM SPEED •6 : •7 : •8 : •10: ORGANIZATION • 1: X1 • 4: X4 • 8: X8 • 9: X9 •16: X16 • 18: X18 • 32: x32 60ns 70ns 80ns 100ns PACKAGE PROCESS & POWER

transistor KSP 42

Abstract: irf950 IRFP100 transistor KSP 56 transistor KSP 92 G 23 ksp 36 93 IRF9500 transistor KSP 13 Samsung "NAND Flash" "ordering information" IRFP p-channel
Contextual Info: ORDERING INFORMATION KSV 3100A C N/ + BURN-IN OPTIONAL (SEE BURN-IN PROGRAM) PACKAGE TYPE (SEE EACH SPEC OF DEVICE) OPERATING TEMP IC’S ONLY BLANK: SEE INDIVIDUAL SPEC C : 0 - 70°C I : - 40 - 85°C M : - 5 5 - + 125°C DEVICE NUMBER AND SUFFIX (OPTIONAL)

RCD 2226

Contextual Info: ADVANCE M T 4C 16260/1 256K X 16 DRAM M IC R O N DRAM 256K X 16 DRAM ASYMMETRICAL, FAST PAGE MODE FEATURES 40-Pin SOJ 40-Pin ZIP Q-6 (0-4) DQ9 1 DQ11 3 Vss 5 DQ14 • Masked Write Not Available Available 4 DQ12 6 DQ 13 B 9 Vcc 11 DQ15 12 D01 D 02 13 DQ4

IBM PC AT schematics

Abstract: R3041 IBM PC schematics IBM schematics 514256 486 system bus crt monitor block diagram crt monitor functional diagram crt terminal interface block diagram PC MONITOR VIDEO OUTPUT CONNECTOR
Contextual Info: R3041 EVALUATION KIT IDT79S341 Integrated Device Technology, Inc. FEATURES: • IDT’s System Integration Manager IDT/sim included in EPROM – On-board debug monitor – Simplifies software development • Complete low-cost 20MHz RISC system – Plug-in AT-style card or stand alone mode

IBM PC AT schematics

Abstract: crt monitor circuit diagram crt monitor block diagram IBM PC schematics floppy drive emulator ibm crt monitor 514256 486 system bus R3051 R3052
Contextual Info: R3041 EVALUATION KIT IDT79S341 Integrated Device Technology, Inc. FEATURES: • IDT’s System Integration Manager IDT/sim included in EPROM – On-board debug monitor – Simplifies software development • Complete low-cost 20MHz RISC system – Plug-in AT-style card or stand alone mode

IBM PC AT schematics

Abstract: R3051 R3052 R3081 514256 power supply connector 4p pc isa schematics R3041 2681 duart
Contextual Info: R3041 EVALUATION KIT IDT79S341 Integrated Device Technology, Inc. FEATURES: • IDT’s System Integration Manager IDT/sim included in EPROM – On-board debug monitor – Simplifies software development • Complete low-cost 20MHz RISC system – Plug-in AT-style card or stand alone mode

3654P

Abstract: DRAM 4464 jeida dram 88 pin MB814260 4464 dram 1024M-bit 4464 64k dram MB81G83222-008 mb814400a-70 4464 ram
Contextual Info: To Top / Lineup / Index Product Line-up Memory Volatile memory 4M-bit DRAM 5.0V RAM 4M-bit DRAM (3.3V) 16M-bit DRAM (5.0V) 16M-bit DRAM (3.3V) 16M-bit SDRAM 64M-bit SDRAM SGRAM DRAM Modules (5.0V) DRAM Modules (3.3V) SDRAM Modules Non-Volatile memory Rewritable

CL480 c-cube

Contextual Info: 5 DRAM/ROM Interface This chapter describes the local DRAM/ROM interface bus. It details all of the signals necessary to connect the CL48x to a DRAM array and optional ROM. The memory controller in the CL48x interacts directly with external memory and generates the control signals required to access external

R5F61725

Abstract: R5F72543 R5F72544 R5F72114 HD64F36079 R5S72625P144FPU R8A77850 MITSUBISHI E100 R5F35L83JFF m3776amch
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

M8512

Abstract: samsung dram AM8512 TSOP 56 Package nand memory
Contextual Info: FUNCTION GUIDE MEMORY ICs 4. ORDERING INFORMATION 4.1 DRAM KM 4 X X XXXXX X X X - XX DRAM SPEED •6 : •7 : •8 : • 10: ORGANIZATION • 1: X1 • 4: X4 • 8: X8 60ns 70ns 80ns 100ns PACKAGE • 9: X9 •1 6 : X16 •P : DIP • 18: X18 • 32: x32 PROCESS & POWER

R5F72543

Abstract: r5f61725 SH7724 R5F2136Can R5F72543RKBGV R5F35L83 R8A77240D500BG 2332 prom R5F70834AD80FTV R5F70835
Contextual Info: Renesas MPU & MCU General Catalog 2009.10 2009.10 Renesas MPU & MCU General Catalog Renesas MPU & MCU General Catalog RJJ01B0001-1200 2009. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon 11.1 Renesas Technology www.renesas.com

cy3341

Abstract: 64K X 4 CACHE SRAM CY7C190 pasic380 cy7c189 palce22v10 programming guide palce16v8 programming algorithm STATIC RAM 6264 vhdl code for 8-bit parity checker 64x18 synchronous sram
Contextual Info: Product Selector Guide Static RAMs Organization/Density Density X1 X4 X4 SIO 7C147 2147 7C123 7C148 7C149 7C150 7C189 7C190 2148 2149 7C122 9122 93422 7C167A 7C168A 7C169A 7C170A 7C171A 7C172A 7C128A 7C187 7C164 7C166 7C161 7C162 7C185 6264 7C182 7C197 7C194

missile seeker

Abstract: military processors SCTD002 SMJ55161 SMJ44C256 military switch 320F240 SMJ5C1008 military mcm 1553 MILITARY QUALIFIED DIP SWITCHES
Contextual Info: TI Mi l itary Semiconductors winning missile designs with TI military semiconductors Seeker Launcher/ Aircraft Link Memory Signal Conditioning SDRAM SRAM VRAM Data Conversion A/D Data Correction gain, offset C80, ASIC EPROM Target Detection Recognition FIFO

Triton P54C

Abstract: cy7c37128 62128 SRAM adapter 48-pin TSOP CY7C37192 CYM74P436 CY3501A CY7C37512 MIB 30 Product Selector Guide
Contextual Info: Product Selector Guide Fast Static RAMs Organization/Density Density X1 X4 X4 SIO X8 4K 7C147 2147 7C123 7C148 7C149 7C150 2148 2149 7C122 9122 93422 16K 7C167A 7C168A 7C128A 6116 64K to 72K 7C187 7C164 7C166 7C185 6264 7C182 256K to 288K 7C197 7C194 7C195

Contextual Info: PRELIMINARY M IC R O N 256K WIDE DRAM X MT4C16260/1 16 WIDE DRAM 256K X 16 DRAM FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • A ddress entry: ten row-addresses, eight columnaddresses • High-performance CMOS silicon-gate process

upd23c8000

Abstract: upd4502161 uPD23C8000X uPD4504161 *D431016 uPD23C16000
Contextual Info: MENU INDEX QUESTIONNAIRE Dynamic RAM Dynamic RAM Module Static RAM Mask ROM Flash Memory COMBO Memory MCP Flash memory and SRAM Application Specific Memory Users Manual, Application Notes, Information Related References MENU Synchronous DRAM 128M synchronous DRAM -PC100 compliant64M synchronous DRAM -PC100 compliant64M synchronous DRAM (x32) -PC100 compliant16M synchronous DRAM (Revision A)

Contextual Info: ADVANCE l^ iic n o N 256K WIDE DRAM X MT4C16270/1 16 WIDE DRAM 256K x 16 DRAM FEATURES • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 500mW active, typical

dram zip

Contextual Info: PRELIMINARY U | | C n D N 256K X M T4C 16260/1 16 W ID E DRAM 256K X 16 DRAM WIDE DRAM ASYMMETRICAL, FAST-PAGE-MODE FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • Address entry: ten row-addresses, eight columnaddresses • High-performance CMOS silicon-gate process

Contextual Info: PRELIMINARY I^ IIC R O N 256K WIDE DRAM 256K X X MT4C16260/1 16 WIDE DRAM 16 DRAM ASYMMETRICAL, FAST-PAGE-MODE FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • Address entry: ten row-addresses, eight columnaddresses • High-perform ance CM OS silicon-gate process

Contextual Info: ADVANCE WIDE DRAM 256K x 16 DRAM FAST-PAGE-MODE WITH EXTENDED DATA-OUT FEATURES PIN ASSIGNMENT Top View • Industry-standard x l6 pinouts, timing, functions and packages • High-perform ance CM O S silicon-gate process • Single +5V ±10% power supply

Contextual Info: ADVANCE MT4C16270/1 256K X 16 WIDE DRAM |U |IC = R O N WIDE DRAM 256K x 16 DRAM FEATURES PIN ASSIGNMENT Top View • Industry-standard xl6 pinouts, tim ing, functions and packages • H igh-perform ance CMOS silicon-gate process • Single +5V ±10% pow er supply

Contextual Info: PRELIMINARY MT4C16256/7/8/9 256K X 16 WIDE DRAM MICRON 256K WIDE DRAM 16 DRAM X FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% pow er supply • Low power, 3mW standby; 500mW active, typical

mt4c256

Abstract: RCD 2226
Contextual Info: ADVANCE 256K X M T 4C 16270/1 16 W IDE DRAM 256K X 16 DRAM WIDE DRAM FAST-PAGE-MODE WITH EXTENDED DATA-OUT FEATURES PIN ASSIGNMENT Top View • Industry-standard xl6 pinouts, tim ing, functions and packages • H igh-perform ance CMOS silicon-gate process