23FL33 Search Results

transistor BC 157

Abstract: TRANSISTOR BC 158 TRANSISTOR BC 158 pnp PNP 157A bc 106 transistor BC 158 is npn or pnp BC 327/25 transistor BC 557 npn transistor bc 558 pnp transistor bc 325
Contextual Info: EPOXY TRANSISTORS CONTINENTAL DEVICE INDIA 3SE D • 23fl3314 OdOOOlS fl ■ JZ . COMMERCIAL/ENTERTAINMENT APPLICATIONS s VCEO VCBO VEBO _Volts Device_ min 1C VCE Volts Volts_ mA Volts min hFE at bias min_ min/max_

CSA715

Abstract: CSC1162
Contextual Info: CSA715 CDU, CSA715 PNP PLASTIC POWER TRANSISTOR Complementary to CSC1162 Low frequency Power Amplifier PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE DIM ‘V p T A B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 F eLJ —G—I MAX. 7.8 E V V- MIN. 7.4 2.25 TYP. 0.49 | 0.75

Contextual Info: 2N6101 2N6101 NPN PLASTIC POWER TRANSISTOR Medium Power Linear and Switching Service in Consumer, Automotive, and Industrial Applications MIN DIM MAX A 14.42 16.51 B 9,63 10.67 C 3.56 4.83 0.90 E 1.15 1.40 F 3.75 3.86 G 2.29 2.79 H 2,54 3,43 J 0,56 K 12.70 14.73

Contextual Info: TIP47, TIP48, TIP49, TIP50 TIP47, 48,49, 50 NPN PLASTIC POWER TRANSISTORS Linear and Switching Applications DIM A B C E F G H J K L M N MIN MAX 14.42 9,63 3,56 16.51 10.67 4.83 0,90 1,15 1,40 3,75 3,88 2,29 2,79 2,54 3,43 0,56 12,70 14,73 6,35 2,03 2,92 31.24

Contextual Info: 23633^ o d o ü 7 3 h *ì g 7 • BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H BC818-16 = 6E BC818-25 = 6F BC818-40 = 6G PA CKA GE O U TLINE DETAILS A LL DIM ENSIO NS IN m m

2F P marking

Abstract: CMBT2907 CMBT2907A
Contextual Info: CMBT2907 CMBT2907A SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P silicon transistors M a ik in g PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm CMBT2907 = 2B CMBT2907A = 2F 3.0 2 .8" 0.14 0.09 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6

a 3120

Abstract: TIP50 A 3121 IC TIP47 TIP48 TIP49
Contextual Info: TIP47, TIP48, TIP49, TIP50 TIP47, 48, 49, 50 NPN PLASTIC POWER TRANSISTORS Linear and Switching Applications DIM A B C E F G H J K L M N MIN MAX 14.42 9.63 3,56 16.51 10.67 4.83 0,90 1,15 1,40 3,75 3,88 2,29 2,79 2,54 3,43 0,56 12,70 14,73 6,35 2.03 2,92 31.24

2SA970BL

Abstract: BC212A 2SA720r 2SA733P 2SA970 Transistor BC212B 2SA719 2SA719Q 2SA719R 2SA719S
Contextual Info: TO-92 Plastic Package Transistors PNP M axim um Ratings Type No. Electrical Characteristics (Ta=25”C, Unless O therw ise S pecified ) PD 'c (W) (A) Tc=25"c C30 ' ces @ & @ Freq (MHz) (pF Ma> NF (dB) Max CDIL Case Style ^EBO (V) Min (V) Min 2SA719 30

cmbt918

Abstract: marking IAY 000D
Contextual Info: CMBT918 V H F/UH F TRANSISTOR N -P -N transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm M arkin g CMBT918 = 3B _3 .0_ 2.8 Pin configuration 0.46 0.38 3 —^ 0.14 0.09 2.6 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _1.02 0.60 0.40 0 .89 " 2.00 1.80 A B SO LU T E M A XIM U M R A T IN G S

CBR1545CT

Contextual Info: CBR1545CT Dual 4L Dual Centre Tap Schottky Barrier Rectifier Suited for SMPS and High Frequency E)C to DC Converters ABSOLUTE MAXIMUM RATINGS Parameters Symbol Average Rectified Forward Current duty cycle = 0.5; T c = 135 °C Per Diode Per Device . If(AV)

MJE170

Abstract: MJE171 MJE172 MJE180 MJE181 MJE182
Contextual Info: MJE170, MJE171, MJE172 MJE180, MJE181, MJE182 MJE170, 171, 172 MJE180, 181, 182 PNP PLASTIC POWER TRANSISTORS NPN PLASTIC POWER TRANSISTORS 'Low Power Audio Amplifier and Low Current, High Speed Switching Applications PIN CONFIGURATION 1. EMITTER 2. CO LLECTO R

CSA748

Abstract: CSC1398
Contextual Info: CSA748 CSA748 PNP PLASTIC POWER TRANSISTOR Complementary CSC1398 Medium Power Amplifier DIM A B C D E F G H J K L M N MIN MAX 16.51 10.67 4.83 0.90 1.15 1,40 3.75 3,88 2.29 2.79 2.54 3.4 3 0,5 6 12.70 14,73 6,35 2.03 2.92 31 .2 4 7 DEG 14.42 9,63 3.56 ABSOLUTE MAXIMUM RATINGS

v23033

Abstract: a06 transistor TRANSISTOR A06 marking A06 MARKING J1A CMBTA05 CMBTA06
Contextual Info: CMBTA05 CMBTA06 CDIL SILICON EPITAXIAL TRANSISTORS N -P -N transistor P A C K A G E O U T L IN E D ETAILS A L L D IM EN SIO N S IN m m M arking CMBTA05 = 1H CMBTA06 = 1G _3.0 2.8 0.14 0.09 0.48 0.38 3 2.6 Pin configuration 2 .4 BASE EMITTER 3 = COLLECTOR _K02

CSB834

Abstract: CSD880 A1442
Contextual Info: CSB834 CSB834 PNP PLASTIC POWER TRANSISTOR Complementary CSD880 Low frequency Power Amplifier Applications DIM A C D E F G H J K L M N ' MIN 14.42 9.63 3.56 MAX 16.51 10.67 4.83 0.90 1,15 1.40 3,75 3.66 2,29 2.79 2,54 3.43 0,56 12.70 14,73 6,35 2,03 2.92 31.24

BCG36

Abstract: bc557 SALJ TO-92-4pin BC327-10 to-92-4
Contextual Info: — CONTINENTAL DEVICE INDIA L.3E D • GG00124 S72 M C D I L TO-92 PLASTIC PACKAGE TRANSISTORS PNP Type No. BC307B (Ta=25°C, Unless Otherwise Specified) Electrical Characteristics Maximum Ratings VC80 VCEO V EBO 'CBO (V) Min (V) Min 00 Min (UA) Max 50

2N6706

Abstract: 2n6730 tn2905 CSC1573 MPSW13 2N6705 2N6707 2N6711 cil916 2N6713
Contextual Info: TO-237 DIM A B C D E F G H K L MIN 4,32 4,45 3,18 0,41 0,35 1,14 12,70 5.DEG MAX 5,33 5,20 4,19 0,55 0,50 0,55 1,40 2,54 - A L L DIM EN SIO N S A R E IN M.M. L L PIN CONFIGURATION AVAILABLE IN TO-237 CDIL Code Style 3 TO-237 PIN 1 PIN 2 PIN 3 Emitter Base

2SA970BL

Abstract: 2SA733P 25A933 2SA720r 2SA970 2SA719 2SA719Q 2SA719R 2SA733 2sa733p 2sa733q 2SA720
Contextual Info: TO-92 Plastic Package Transistors PNP M axim um Ratings Type No. Electrical Characteristics (Ta=25”C, Unless O therw ise S pecified ) PD 'c (W) (A) Tc=25"c C30 ' ces @ & @ Freq (MHz) (pF Ma> NF (dB) Max CDIL Case Style ^EBO (V) Min (V) Min 2SA719 30

CSA1012

Abstract: CSC2562 ic 356 transistor CSA1012
Contextual Info: CSA1012, CSC2562 CSA1012 PNP PLASTIC POWER TRANSISTOR CSC2562 NPN PLASTIC POWER TRANSISTOR High Current Switching Applications i— i * r: * .4 IP U = ,C . e , •il t * j DJ g 1 tl DIM A B C D E F G H J K L M N MIN MAX 16.51 10.67 4,83 0.90 1.15 1.40 3,75

Contextual Info: SILICON PLANAR EPITAXIAL TRANSISTORS P-KJ-P transistors Marking BCW89 = H3 PA CKA GE OU TLINE DETAILS A LL DIM ENSIO NS IN mm O .U Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter Collector-emitter voltage (open base)

Contextual Info: L TIP41, TIP41A, TIP41B, TIP41C TIP42, TIP42A, TIP42B, TIP42C TIP 41, 41 A, 41 B, 41C TIP 4 2 ,42A, 42B, 42C NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications DIM A B C D E F G H J K L M N MIN

BD168

Contextual Info: CDIL BD166, BD168, BD170 BDI66,168,170 PNP PLASTIC POWER TRANSISTORS Complementary BD165, 167,169 Aucjio Amplifier and Driver Circuit Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE DIM MIN. A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 2.25 TYP.

Contextual Info: BUX84, BUX84A BUX84, 84A NPN PLASTIC POWER TRANSISTORS High Voltage, High Speed Power Switching Applications DIM A B C E F G H J K I M N MIN 1 4 .« 9.63 3.56 MAX 16.51 10.67 4.83 0.90 1.15 1.40 3,75 3.B8 2.29 2.79 2.54 3.43 0,56 12.70 14,73 6,35 2.92 2,03

Contextual Info: BSR20 BSR20A SILICON P-N -P HIGH-VOLTAGE TRANSISTORS P-N -P high-voltage small-signal transistors PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking BSR20 = T35 BSR20A = T36 3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6

W15NA

Contextual Info: E3fl33T4 DÜ OÜTBT W BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G Pin configuration PA CKA G E O U TLINE DETAILS A LL D IM ENSIO NS IN m m _3.0_ 2.8 0.14