23033 Search Results

2n h 2222a

Abstract: transistor 2222a to-92 transistor 2222a transistor 2n 2222 2n 2222A to-92 npn mml 600 pnp 2n 2222 transistor 2N917 33T4
Contextual Info: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 32E D • 23033=14 0000012 5 ■ PROFESSIONAL GRADE APPLICATIONS " VCEO VCBO VEBO Volts Volts Volts min min min Device hFE at bias min/max IC VCE ICM PTA mA Volts mA mW max max PTC W max Cob ts NF ICBO VCE sat fT

all diodes ratings

Abstract: BAV74 marking a5 diode
Contextual Info: 23033=14 00007BL, 83G BAV74 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE Dual diodes, common cathodes Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm BAV74 - A5 _3 .0_ Pin configuration 2.8 1 = ANODE 2 = ANODE 3 = CATHODE -K 0.14 0.48 0.38 3 2.6 2.4 1.02

BF 914 transistor

Abstract: diode t 4148 33T4 transistor BF 914
Contextual Info: DIODES PROFESSIONAL GRADE GENERAL PURPOSE DIODES — CONT INENTAL DEVICE INDIA 32E D trr 4 nsec; dissipation 250 mW; IPM=225 mA. AXIAL LEAD * 23033^4 OOOODlfl 3 m T - 0 3 - c > 9 • . PIV Volts min VF@ Volts max IF mA CT 41 CT 42 CT 43 CT 44 25 40 50 75 100

BCW67A

Contextual Info: 23033^4 □0GD7b4 b44 itili 'H t BCW67, A, B, C BCW68, F, G, H GENERAL PURPOSE TRANSISTOR P-N -P transistor Marking BCW67A = DA BCW67B = DB BCW67C = DC BCW68F = DF BCW68G = DG BCW68H = DH PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m _3.0_ 2.8 0.14 0.48 0.38

2N2195

Abstract: 2N198 2N1987 BFY72 BSY52 BSY53 BSY54 CL150
Contextual Info: b3E J> CONTINENTAL DEVICE INDIA • 23033^4 QQQGOTl 2Tb ■ CDIL TO-39 METAL-CAN PACKAGE TRANSISTORS NPN Maximum Ratings Typ» V CBO V CEO V EBO *CBO No. (V) Min (V) M'm (V) Min (MA) Max 75 30 7 BSY53 0.010 V CB hFE 75 30 7 0.010 O 'c * (mA) V CE V C E (S a t)& V B E (S a t)° 'c

CT54

Abstract: CT182 CT41 CT21 CT22 CT23 CT24 CT26 CT27 CT28
Contextual Info: CONTINENTAL DEVICE INDIA b3E D • 23033^4 QQQOObS 1QM ■ CDIL- DO-35 GENERAL PURPOSE DIODES FOR PROFESSIONAL APPLICATIONS 250 MW Electrical Type No. Ir at Vr Characteristics (At Ta=25°C, U nless Otherwise Specified) PD P1V Vf o cd Ip max (mA) min

ez 921

Abstract: 2SA733P 2SA1015Y 2SA537 PNP 2SA1015GR 2SA1015 2SA537B 2SA10150 2SA673A 2SA733
Contextual Info: CONTINENTAL DEVICE INDIA b3E D • 23033^4 DGDG1S3 b3b B K D I L - TO-92 PLASTIC PACKAGE TRANSISTO RS PNP Maximum Ratings Typ« No. 2SA537 (V) Un VCEO (V) Un VEBO (V) Un 60 50 5 VC80 Electrical Characteristics 'CBO (UA) VC8 (V)

2SA10150

Abstract: SO-160
Contextual Info: CONTINENTAL DEVICE INDIA b3E D • 23033^4 DGDG1S3 b3b B K D I L - TO-92 PLASTIC PACKAGE TRANSISTORS PNP Maximum Ratings Typ« No. 2SA537 VC80 (V) Un 60 VCEO VEBO (V) (V) Un Un 50 5 Electrical Characteristics 'CBO (UA) VC8

CIL TRANSISTOR

Abstract: cil 612 npn transistor to106 TRANSISTOR TO-106 Transistor CIL 622 CIL622 CIL 167 transistor K 3565 TO-106 Transistor CIL 611
Contextual Info: EPOXY TRANSISTORS CONTINENTAL DEVICE INDIA 35E D • 23033^4 00G00ÜÖ G ■ 'J l¡t 3/« ,/£ - PROFESSIONAL GRADE APPLICATIONS Device VCEO VCBO VEBO Volts Volts Volts min min min hFE at bias 1C VCE ICM PTA ICBO VCE sat fT mA Volts mA mW f»A Volts MHz max

stripline

Abstract: MIL-T-10727 QQN-290 Aries Electronics 10 pin single row socket Elevator
Contextual Info: ARI ES E L E C T R O N I C S INC S4E D • 0^23033 G O G O ^ l 34b ■ P.O . B o x 130, F re n c h to w n , N J 08825 P h o n e 1-908-996-6841 F A X 1-908-996-3891 PRIES STRIP-LINE SOCKETS ELEVATOR STRIP-LINE SOCKETS ELECTRONICS, INC. For mounting liquid crystal

Contextual Info: SL2S1412; SL2S1512; SL2S1612 ICODE ILT-M Rev. 3.0 — 2 May 2012 230330 Product short data sheet COMPANY PUBLIC 1. General description The ISO 18000-3 mode 3/EPC Class-1 HF standard allows the commercialized provision of mass adoption of HF RFID technology for passive smart tags and labels. Main fields of

BCW66H

Abstract: BCW66F BCW66G
Contextual Info: 23033=14 0ÜQ0 7b5 Ô71 BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N -P -N transistor Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAG E O UTLIN E D ETA ILS ALL D IM EN SIO N S IN m m _3.0 2.8 0.14 0.09 0.48 0.38 Pin configuration _L § 3 0.70 0.50

PO diode

Abstract: diode to-105
Contextual Info: TO-105 NOISE LIMITER DIODE ALSO AVAILABLE IN TO-92, ON REQUEST E lectrical Typo VF Pd C haracteristics (A t Ta=25°C, Unless O therw ise S pecified) O Ip Ifm No. max C08O (W) (V) (mA) (mA) .5 1 200 450 2303314 OOOOni 1B7 • 34 This Material Copyrighted By Its Respective Manufacturer

DIODE A6

Abstract: 0018413 MARKING J1A BAS16
Contextual Info: 23033*14 DD0D714 0 1 e BAS16 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE Silicon epitaxial high-speed diode PACKAGE OUTLINE DETAILS ALL DIM ENSIONS IN m m M arking BASI 6 = A6 _3.0_ 2.8 0 14 0.48 0.38 3 Pin configuration 2.6 1 = ANODE 2 = NC 2.4 3 = CATHODE

TO 106 transistor

Abstract: TO-106 transistor case To 106 TO106 transistor to106 transistor t06 19 33T4 cd-12 TO-92 TRANSISTOR TO-106
Contextual Info: ^ CONTINENTAL DEVICE INDIA 35E » • 23033^4 □□□□□El 3 ■ PROFESSIONAL GRADE GENERAL PURPOSE DIODES • RADIAI, LEAD ‘ PIV VF @ IF IFM IR @ VR PTA trr Co Volts Volts mA mA mW nsec max MA max Volts min Pf typ 5 1.2 50 150 0.1 5 - 150 CD 12 \ 12

A1362

Abstract: CSA1362 CSA1362GR transistor marking CS
Contextual Info: 23033^4 DDGOflbT CSA1362 LOW FREQUENCY POWER AMPLIFIER TRANSISTOR P -N -P transistor PA CKA G E O UTLIN E DETAILS ALL D IM EN SIO N S IN m m Marking CSA1362GR = AE _3.0_ 2.8 0.14 0.09 0.48 0.38 0.70 0.50 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR

CIL TRANSISTOR

Abstract: cil 612 npn transistor to106 Transistor CIL 611 bf 771 TO 106 transistor to-106 transistor bf 196 33T4 T0105
Contextual Info: EPOXY TRANSISTORS CONTINENTAL DEVICE INDIA 35E D • 23033^4 00G00ÜÖ G ■ 'Jl¡t 3 /«,/£- PROFESSIONAL GRADE APPLICATIONS Device VCEO VCBO VEBO Volts Volts Volts min min min hFE at bias 1C mA VCE Volts ■ min/max ICM mA max PTA mW max ICBO VCE sat fT

Contextual Info: SL2S1412; SL2S1512; SL2S1612 ICODE ILT-M Rev. 3.0 — 2 May 2012 230330 Product short data sheet COMPANY PUBLIC 1. General description The ISO 18000-3 mode 3/EPC Class-1 HF standard allows the commercialized provision of mass adoption of HF RFID technology for passive smart tags and labels. Main fields of

Contextual Info: 23033*34 Ü DO Ga b? 234 • CSA1162 CDÎL LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR P-N-P transistor PA CKA G E O U TLIN E D ETA ILS ALL D IM EN SIO N S IN m m Marking CSA1162Y-3E CSA1162GR G -3F _3.0 2 . 8~ 0.48 0.38 3 Pin configuration 1 = BASE

Contextual Info: DIODES PROFESSIONAL GRADE GENERAL PURPOSE DIODES — CONTINENTAL DE V I C E INDIA 32E D trr 4 nseo; dissipation 250 mW; IPM=225 mA. AXIAL LEAD * • 23033^4 OOOOOlfl 3 m T - VR Co A»A max Volts PF max 0.1 0.1 0.1 5.0 5.0 20 30 40 50 75 4 4 20 20 20 - 20 20

CC 6520 TRANSISTOR

Abstract: 33T4 CMBT6520
Contextual Info: 23033^4 0D0D850 T3Q • CMBT 6520 HIGH-VOLTAGE TRANSISTOR P -N -P transistor MarkinS CMBT6520 = 2Z PACKAGE O UTLINE DETAILS ALL D IM E N SIO N S IN m m 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter

2N3501

Abstract: 2N3439 2N3440 2N3500 2N3742 2N4926 BD115 BF258 BF259 BF336
Contextual Info: CONTINENTAL DEVICE INDIA b3E D • 23033*14 OQQOOflb W ■ CDIL TO-39 METAL-CAN PACKAGE TRANSISTORS NPN Type No. VCBO VCEO (V) (V) Min Min VEBO (V) Min •cBO (MA) Max VCB (V) hFE ® lc •& VCE (mA) (V) Min Max 10.0 0.75 10.000 10.0 1.00 40 2N3742 300

BD115

Abstract: TO-92-4pin
Contextual Info: CONTINENTAL DEVICE INDIA b3E D • 23033^4 OOQOOflb =13^ ■ CDIL TO-39 METAL-CAN PACKAGE TRANSISTORS NPN Type No. hFE VCEO V EBO •cBO VCB (V) Min (V) Min (V) Min (MA) Max (V) 2N3439 450 350 7 20.000 360 40 2N3742 300 300 7 0.200 200 VCBO lc (mA)

Contextual Info: 23033*14 DDDDßSG T3G • CMBT 6520 HIGH-VOLTAGE TRANSISTOR P-N -P transistor Marking CMBT6520 = 2Z PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter