205A Search Results

Outline Dimensions

Contextual Info: Outline Dimensions Vishay Semiconductors DO-205AB DO-9 for 240U(R) Series DIMENSIONS in millimeters (inches) 19.2 (0.76) MAX. 4.2 ( 0.17 ) MA X. 23 (0.91) plone MIN. Ø 8.9 (0.35) Ø 8.4 (0.33) Ø 27.9 (1.1) MAX. 190 (7.48) MAX. SW 32 53.3 (2.1) MAX. 10 (0.39) MAX.

VP0300M

Abstract: VP0300L VP0300B-2 VP0300B VP0300
Contextual Info: VP0300 SERIES P-Channel Enhancement-Mode MOS Transistors HHSüSSÜS PRODUCT SUMMARY PART NUMBER V BR DSS (V) VP0300B -3 0 VP0300L VP0300M BOTTOM VIEW TO-39 (TO-205AD) •d "W (A) PACKAGE 2.5 -1 .2 5 TO -39 -3 0 2.5 -0 .3 2 TO -92 -3 0 2.5 - 0 .5 TO -237 1 SOURCE

Contextual Info: Tem ic 2N6851 Siliconix P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) -200 TDS(on) (ß ) 0.80 I d (A) -4.0 Parametric limits in accordance with M1L-S-19500I564 where applicable. T 0-205A F (TO-39) Ô D P-Channel MOSFF.T Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)

VN0808M

Abstract: VNDQ09 VNDQ3CHP VN88A TO-205AD
Contextual Info: VNDQ09 N-Channel Enhancement-Mode MOSFETs iTSS?SS.xd DEVICE TYPE PACKAGE Single TO-39 TO-205AD Single TO-237 • VN0808M Single TO-220SD • VN88AFD Quad 14-Pin Plastic • VQ1006J Quad 14-Pin Dual-ln-Line • VQ1006P Single Chip • Available as VNDQ3CHP

vn0300m

Contextual Info: SILICONIX INC 1ÔE D • GG3j MG7 4 b ■ VN0300 SERIES f X S ilicon ix X V 3254735 in c o r p o r a te d N-Channet Enhancement-Mode MOS Transistors T -S q -o S PRODUCT SUMMARY PART NUMBER TQ-205AD TO-39 V(BR)DSS fDS(ON) < ii) (V) Id (A) PACKAGE VN0300B

Contextual Info: -BTSSKte 2N6661 JANTX, JANTXV N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY _ TO-39 TO-205AD h O (V) (A) 90 4 0.86 V (B R )D S S BO TTO M VIEW •d 2 GATE 3 & C AS E-D R A IN ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

DO-30

Abstract: DO205AC DO205AA DO30 do-205aa DO-205AA DO-8 DO-8 DO-205AC
Contextual Info: Outline Dimensions Vishay Semiconductors DO-205AC DO-30 , DO-205AA (DO-8) and B-42 for 45L(R), 150K(R) and 150KS(R) Series DIMENSIONS FOR 45L(R) SERIES - DO-205AC (DO-30) in millimeters (inches) 15.30 (0.60) MAX. Ø 7.39 (0.297) Ø 6.89 (0.271) 8.30 (0.327)

IRLF130

Abstract: SS452 mosfet b44 diode b44
Contextual Info: Preliminary Data Sheet No. PD-9.659 INTERNATIOIM AL R E C T IFIE R r i o R REPETITIVE AVALANCHE AND dv/dt RATED IRLF130 HEXFET TRANSISTORS LOGIC LEVEL L SERIES N-CHANNEL 100 Volt, 0.20 Ohm Logic Level HEXFET® TO-205AF TO-39 Hermetic Package The Logic Level ‘L’ series of power MOSFETs are designed

FRL9130R

Abstract: 2E12 FRL9130D FRL9130H Rad Hard in Fairchild for MOSFET
Contextual Info: FRL9130D, FRL9130R, FRL9130H 5A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 5A, -100V, RDS on = 0.550Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

LD 33 regulator

Abstract: JANTXV2N6800 IRFF330 JANTX2N6800
Contextual Info: PD - 90432C IRFF330 JANTX2N6800 JANTXV2N6800 REF:MIL-PRF-19500/557 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF330 BVDSS 400V RDS(on) 1.0Ω ID 3.0A  The HEXFET technology is the key to International

Contextual Info: 45L R , 150K(R), 150KS(R) Series Vishay Semiconductors Standard Recovery Diodes (Stud Version), 150 A FEATURES • Alloy diode RoHS • High current carrying capability COMPLIANT • High surge current capabilities • Stud cathode and stud anode version DO-205AA (DO-8)

2E12

Abstract: 3E12 FRL430D FRL430H FRL430R Rad Hard in Fairchild for MOSFET
Contextual Info: FRL430D, FRL430R, FRL430H 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 2A, 500V, RDS on = 2.50Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

mm5416

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 772 283-4500 FAX: (772)286-8914 Website: http://www.semi-tech-inc.com Email: data1@semi-tech-inc.com TYPE: MM5416 CASE OUTLINE: TO-205AD (TO-39) PNP SILICON TRANSISTOR

Contextual Info: Bulletin I25247 10/06 ST203SPbF SERIES Stud Version INVERTER GRADE THYRISTORS 205A Features All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capability Low thermal impedance High speed performance Lead Free

IRF 260 N

Abstract: IRFF220 JANTX2N6790 JANTXV2N6790
Contextual Info: PD - 90427D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF220 JANTX2N6790 JANTXV2N6790 REF:MIL-PRF-19500/555 200V, N-CHANNEL Product Summary Part Number IRFF220 BVDSS RDS(on) ID 200V 3.5A 0.80Ω T0-39 ® The HEXFET technology is the key to International

368D

Abstract: Vrsm 610C RB420D RB421D RB425D RB441Q RB450F RB471E RB501H
Contextual Info: < Ûco<OC OJ QO LO 368A 610 A 205A ,36 8 0 |S 1 0A 1730G <64 : 610 D 368A 1563 610A 368D 610A 368D 610A 205A 368D 610 F 20 5 F 610 D 205D 368A 669 669 421B 4 21 B 78E 42 0 E 610A <c <s CJ>w w u. <c -c o if ü £ & Q k*J -PI "rv vr1 ^ ÍK , •Ç-. ^ i Ì j 5= i

MRF229

Abstract: 5A09 2N3553 motorola Transistor 2N3866 MRF317 motorola mrf MRF high power transistor MRF314A MRF340 transistor MRF317
Contextual Info: ÌF PRODUCTS — BIPOLAR POWER TRANSISTORS continued CASE 79-02 TO-205AD (TO-39) CASE ; 44B-05 (.380" Stud) CASE 145A-09 (.380" Stud) CASE 211-07 CASE 211 -09 (.380" Flange) CASE 79-03 (TO-205 Type I CASE 221A-02 (TO-220AB) For VIHF Applications 30-20CI MHz VHF AM/FM Transistors

368D

Abstract: Vrsm 610C RB420D RB421D RB425D RB441Q RB450F RB471E RB501H
Contextual Info: < Ûco<OC OJ QO LO 368A 610 A 205A ,36 8 0 |S 1 0A 1730G <64 : 610 D 368A 1563 610A 368D 610A 368D 610A 205A 368D 610 F 20 5 F 610 D 205D 368A 669 669 421B 4 21 B 78E 42 0 E 610A <c <s CJ>w w u. <c -c o if ü £ & Q k*J -PI "rv vr1 ^ ÍK , •Ç-. ^ i Ì j 5= i

368D

Abstract: S4 68A 610C RB420D RB421D RB425D RB441Q RB450F RB471E RB501H
Contextual Info: < Ûco<OC OJ QO LO 368A 610 A 205A ,36 8 0 |S 1 0A 1730G <64 : 610 D 368A 1563 610A 368D 610A 368D 610A 205A 368D 610 F 20 5 F 610 D 205D 368A 669 669 421B 4 21 B 78E 42 0 E 610A <c <s CJ>w w u. <c -c o if ü £ & Q k*J -PI "rv vr1 ^ ÍK , •Ç-. ^ i Ì j 5= i

2DL15A

Abstract: ISS355 1SS287 1SS288 1SS289 1SS290 1SS291 1SS292 1SS300 1SS301
Contextual Info: U Q U .U U ü 89C 89C 46 6101 2051 Û Ü Û D 3C Û 420E 420D 657 657 657 205D 205A 559A 6 10 A 610A 78E 205C 205D 205F : 205C 15 3 - - <T3 ^5 o> co ao tir 02 = < —CQ w S i+j & I I G e 2 C v JS V , -E iS Ë -S G E eo a. c ~ =1 e « % |p 5 « í í ss f f

Contextual Info: FRL130D, FRL130R, FRL130H 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 8A, 100V, RDS on = 0.180^ TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

2n5320

Abstract: 2N5320 MOTOROLA 2N5321 2N5321 MOTOROLA
Contextual Info: MOTORCLA SC 12E D I b3b?aSM 00flb434 Ö | XSTRS/R F 'T-3Ç- 'P 2N5320 2N5321 CASE 79-04, STYLE 1 TO-39 TO-205AD) M A X IM U M RATINGS Symbol Rating 2N5320 2N5321 U nit Collector-Emltter Voltage VcEO 75 50 Vdc Collector-Base Voltage VcBO 100 75 Vdc Emitter-Base Voltage

2N3810 LCC

Abstract: 206AA *2N2920* LCC 2N3811 JANTX 2n3737 2N2907AUB
Contextual Info: Bipolar Small Signal Transistors Page 1 of 9 Next Home Package Device Type VCEO sus Volts IC (max) Amps hFE@IC/VCE min/max @ mA/V VCE(sat)@ IC/IB COB V@mA/mA pF fT MHZ PNP TO-5/205AD 2N1132A 40 0.6 30/90@150/10 1.5@150/15 30 60 NPN TO-5/205AD 2N1613,L *

SDB-205A-RD

Abstract: SDB-205 SDB-205A-GD SDB-205A SDB-205AGD SDC-205A-GD SDB205AGD SDB- stanley
Contextual Info: • BRACKET TYPE LED SDB-205A Series o/ 9.3mm ■ Absolute Maximum Ratings Ta = 25°C Red Yellow Pure Green RD BR YD(AY) GD(BG) Unit Power Dissipation Pb 100 125 125 mW Forward Current IF 50 50 50 mA Peak Forward Current IFM 300 100 100 mA Reverse Voltage