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00FLB434 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2n5320 Abstract: 2N5320 MOTOROLA 2N5321 2N5321 MOTOROLA Contextual Info: MOTORCLA SC 12E D I b3b?aSM 00flb434 Ö \| XSTRS/R F 'T-3Ç- 'P 2N5320 2N5321 CASE 79-04, STYLE 1 TO-39 TO-205AD) M A X IM U M RATINGS Symbol Rating 2N5320 2N5321 U nit Collector-Emltter Voltage VcEO 75 50 Vdc Collector-Base Voltage VcBO 100 75 Vdc Emitter-Base Voltage	OCR Scan	00flb434 2n5320 2n5321 o-205ad +22n5320 motorola 2n5321 motorola	PDF
PD488170L Abstract: NEC 488170L D488170L RDRAM cross reference NEC RDRAM 36 REF05 Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT jiiP D 4 8 8 1 7 0 L 18M-BIT Base Rambus DRAM 1M-WORD X 9-BIT X 2-BANK ★ Description The 18-Megabit Rambus DRAM RDRAM is an extremely-high-speed CMOS DRAM organized as 1M word x 9 bits x 2 banks and capable of bursting up to 256 bytes of data at 1.67 ns per byte. The use of Rambus	OCR Scan	18m-bit 18-megabit /xpd488170l p32g6-65a +7bm27525 pd488170l nec 488170l d488170l rdram cross reference nec rdram 36 ref05	PDF

Catalog Datasheet

Type

Document Tags

PDF

2n5320

Abstract: 2N5320 MOTOROLA 2N5321 2N5321 MOTOROLA
Contextual Info: MOTORCLA SC 12E D I b3b?aSM 00flb434 Ö | XSTRS/R F 'T-3Ç- 'P 2N5320 2N5321 CASE 79-04, STYLE 1 TO-39 TO-205AD) M A X IM U M RATINGS Symbol Rating 2N5320 2N5321 U nit Collector-Emltter Voltage VcEO 75 50 Vdc Collector-Base Voltage VcBO 100 75 Vdc Emitter-Base Voltage

OCR Scan

00flb434 2n5320 2n5321 o-205ad +2

PDF

PD488170L

Abstract: NEC 488170L D488170L RDRAM cross reference NEC RDRAM 36 REF05
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT jiiP D 4 8 8 1 7 0 L 18M-BIT Base Rambus DRAM 1M-WORD X 9-BIT X 2-BANK ★ Description The 18-Megabit Rambus DRAM RDRAM is an extremely-high-speed CMOS DRAM organized as 1M word x 9 bits x 2 banks and capable of bursting up to 256 bytes of data at 1.67 ns per byte. The use of Rambus

OCR Scan

18m-bit 18-megabit /xpd488170l p32g6-65a +7

PDF