20080523A Search Results

20080523A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: IXKC 40N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 28 A RDS on) max = 95 m Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873 Features	Original	40N60C ISOPLUS220TM E72873 20080523a	PDF
40n60c Abstract: mosfet 4800 E72873 Contextual Info: IXKC 40N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 28 A RDS on) max = 95 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873	Original	40N60C ISOPLUS220TM E72873 20080523a 40n60c mosfet 4800 E72873	PDF
20N60C Contextual Info: IXKC 20N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 15 A RDS on) max = 190 m Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873	Original	20N60C ISOPLUS220TM E72873 20080523a 20N60C	PDF
23N60 Abstract: 23n60c5 E72873 IXKC23N60C5 18A60 Contextual Info: IXKC 23N60C5 Advanced Technical Information CoolMOS 1 Po wer MOSFET ID25 = 23 A VDSS = 600 V RDS on) max = 0.1 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge	Original	23N60C5 ISOPLUS220TM E72873 IXKC23N60C5 20080523a 23N60 23n60c5 E72873 IXKC23N60C5 18A60	PDF
35n60 Abstract: IXKH35N60C5 35n60c MOSFET IXYS TO-220 35n60c5 IXKP35N60C5 MOS-FET 1307 L-120 AB Contextual Info: IXKH 35N60C5 IXKP 35N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 35 A VDSS = 600 V RDS on) max = 0.1 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D q D(TAB) S S TO-220 AB (IXKP)	Original	35N60C5 O-247 O-220 20080523a 35n60 IXKH35N60C5 35n60c MOSFET IXYS TO-220 35n60c5 IXKP35N60C5 MOS-FET 1307 L-120 AB	PDF
85N60C Abstract: UPS SIEMENS E72873 ID100 Contextual Info: IXKK 85N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 94 A RDS on) max = 36 mΩ Low RDSon, high VDSS Superjunction MOSFET D TO-264 G G q D E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID100 TC = 25°C TC = 100°C	Original	85N60C O-264 E72873 ID100 20080523a 85N60C UPS SIEMENS E72873 ID100	PDF
SOT-227 heatsink Abstract: Ixkn 40N60C E72873 Contextual Info: IXKN 40N60C CoolMOS 1 Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET VDSS ID25 RDS on) 600 V 40 A Ω 70 mΩ miniBLOC, SOT-227 B G E72873 D S G Preliminary data S S S D G = Gate D = Drain S = Source Either source terminal at miniBLOC can be used	Original	40N60C OT-227 E72873 20080523a SOT-227 heatsink Ixkn 40N60C E72873	PDF
20n60c Abstract: IXKC 20n60c E72873 A8711 Contextual Info: IXKC 20N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 15 A RDS on) max = 190 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873	Original	20N60C ISOPLUS220TM E72873 20080523a 20n60c IXKC 20n60c E72873 A8711	PDF
40N60C Abstract: ISOPLUS247 ISOPLUS247TM ixkr 40n60c IXKR40N60C Contextual Info: IXKR 40N60C CoolMOS 1 Power MOSFET in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base D VDSS ID25 RDS on) 600 V 38 A 70 mΩ Ω ISOPLUS 247TM E153432 G G D Preliminary data S S G = Gate	Original	40N60C ISOPLUS247TM 247TM E153432 O-247 20080523a 40N60C ISOPLUS247 ixkr 40n60c IXKR40N60C	PDF
15N60 Abstract: 15N60C5 E72873 15n60c Contextual Info: IXKC 15N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 15 A VDSS = 600 V RDS on) max = 0.165 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge	Original	15N60C5 ISOPLUS220TM E72873 20080523a 15N60 15N60C5 E72873 15n60c	PDF
47N60C Abstract: 47n60 power mosfet 350v 30a to 247 UPS SIEMENS E72873 ID100 Contextual Info: IXKH 47N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 47 A RDS on) max = 70 mΩ Low RDSon, high VDSS Superjunction MOSFET D TO-247 G G q D E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID100 TC = 25°C TC = 100°C	Original	47N60C O-247 E72873 ID100 20080523a 47N60C 47n60 power mosfet 350v 30a to 247 UPS SIEMENS E72873 ID100	PDF
47N60C Contextual Info: IXKH 47N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 47 A RDS on) max = 70 m Low RDSon, high VDSS Superjunction MOSFET D TO-247 G G ﬂ D E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID100 TC = 25°C TC = 100°C	Original	47N60C O-247 E72873 ID100 20080523a 47N60C	PDF
19n60 Abstract: 19n60c5 E72873 Contextual Info: IXKC 19N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 19 A VDSS = 600 V RDS on) max = 0.125 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge	Original	19N60C5 ISOPLUS220TM E72873 20080523a 19n60 19n60c5 E72873	PDF
Contextual Info: LKK 47-06C5 Advanced Technical Information Dual CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 47 A Ω/MOSFET RDS on) max = 45 mΩ Common Source Topology DCB isoated package 4 D1 T1 2 G1 3 S 1 2 3 4 5 T2 1 G2 5 D2 Features MOSFET T1/T2 Symbol Conditions VDSS	Original	47-06C5 20080523a	PDF