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IXYS Corporation


IXYS Corporation IXKC23N60C5 Transistor: N-MOSFET; unipolar; 600V; 23A; 147W; ISOPLUS220™
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXKC23N60C5				1	1 $13.36 10 $10.71 100 $9.62 1000 $9.62 10000 $9.62	Get Quote

23N60C5 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: IXKC 23N60C5 Advanced Technical Information ID25 = 23 A VDSS = 600 V RDS on max = 0.1 Ω CoolMOS Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM	Original	23n60c5 isoplus220tm e72873	PDF
Contextual Info: IXKC 23N60C5 CoolMOS 1 Power MOSFET ID25 = 23 A VDSS = 600 V RDS on) max = 0.1 Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S Preliminary data	Original	23n60c5 isoplus220tm e72873 20100303c	PDF
23N60 Abstract: 23n60c5 E72873 IXKC23N60C5 18A60 Contextual Info: IXKC 23N60C5 Advanced Technical Information CoolMOS 1 Po wer MOSFET ID25 = 23 A VDSS = 600 V RDS on) max = 0.1 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge	Original	23n60c5 isoplus220tm e72873 ixkc23n60c5 +320080523a 23n60 18a60	PDF
23N60 Abstract: E72873 A6014 Contextual Info: IXKC 23N60C5 CoolMOS 1 Power MOSFET ID25 = 23 A VDSS = 600 V RDS on) max = 0.1 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S Preliminary data	Original	23n60c5 isoplus220tm e72873 20100303c +223n60 a6014	PDF
Contextual Info: IXKC 23N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 23 A VDSS = 600 V RDS on max = 0.1 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM	Original	23n60c5 isoplus220tm e72873	PDF
Contextual Info: IXKC 23N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 23 A VDSS = 600 V RDS on max = 0.1 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM	Original	23n60c5 isoplus220tm e72873	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	ms-013 10-pin 5m-1994 mo-229 +107n60b equivalent 18n50 equivalent ixgh 1499 mosfet smd 4407 ixdd 614 c 547 b w57 bjt transistor r1275ns20l r1271ns12c ixys cs 20-22 mof1 ixtp 220n04t2	PDF