19N60C5 Search Results

19N60C5 Price and Stock

Filter by Manufacturer

IXYS Corporation


IXYS Corporation IXKC19N60C5 Transistor: N-MOSFET; unipolar; 600V; 19A; ISOPLUS220™; 430ns
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXKC19N60C5				1	1 $5.29 10 $3.78 100 $3.78 1000 $3.78 10000 $3.78	Get Quote

19N60C5 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: IXKC 19N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 19 A VDSS = 600 V RDS on max = 0.125 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge	Original	19n60c5 isoplus220tm e72873	PDF
19n60 Contextual Info: IXKC 19N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 19 A VDSS = 600 V RDS on) max = 0.125 Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge	Original	19n60c5 isoplus220tm e72873 20090209b +119n60	PDF
19n60 Contextual Info: IXKC 19N60C5 Advanced Technical Information ID25 = 19 A VDSS = 600 V RDS on max = 0.125 Ω CoolMOS Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM	Original	19n60c5 isoplus220tm e72873 19n60	PDF
19n60 Contextual Info: IXKC 19N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 19 A VDSS = 600 V RDS on max = 0.125 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge	Original	19n60c5 isoplus220tm e72873 19n60	PDF
19n60 Contextual Info: IXKC 19N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 19 A VDSS = 600 V RDS on) max = 0.125 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge	Original	19n60c5 isoplus220tm e72873 20090209b +119n60	PDF
19n60 Abstract: 19n60c5 E72873 Contextual Info: IXKC 19N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 19 A VDSS = 600 V RDS on) max = 0.125 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge	Original	19n60c5 isoplus220tm e72873 20080523a +119n60	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	ms-013 10-pin 5m-1994 mo-229 +107n60b equivalent 18n50 equivalent ixgh 1499 mosfet smd 4407 ixdd 614 c 547 b w57 bjt transistor r1275ns20l r1271ns12c ixys cs 20-22 mof1 ixtp 220n04t2	PDF