1SV225 Search Results

1SV225

Abstract: S3 diode
Contextual Info: 1SV225 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV2 2 5 ELECTRONIC TUNING APPLICATIONS OF FM RECEIVERS. • • Low Seríes Resistance Small Package : rs = 0.35 Typ. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage

1SV225

Abstract: C3 SC-59 TOSHIBA
Contextual Info: 1SV225 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV225 Electronic Tuning Applications of FM Receivers • Low series resistance: rs = 0.35 typ. · Small package Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit

marking TD

Contextual Info: TOSHIBA 1SV225 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE ELECTRONIC TUNING APPLICATIONS OF FM RECEIVERS. • Low Seríes Resistance • Small Package U nit in mm : rs = 0.35 Typ. MAXIMUM RATINGS (Ta = 255C) SYMBOL CHARACTERISTIC Reverse Voltage

1SV225

Contextual Info: 1SV225 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV225 Electronic Tuning Applications of FM Receivers • Low series resistance: rs = 0.35 typ. • Small package Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol

Contextual Info: TOSHIBA 1SV225 1 SV2 2 5 TO SHIBA VAR IABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ELECTRONIC TU N IN G APPLICATIONS OF FM RECEIVERS. • • Low Series Resistance Small Package : rs = 0.35 Typ. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

Diode Marking C.3

Abstract: 1SV225
Contextual Info: TOSHIBA 1SV225 1 SV2 2 5 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ELECTRONIC TUNING APPLICATIONS OF FM RECEIVERS. • • Low Series Resistance Small Package : rg = 0.35 Typ. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

1SV225

Contextual Info: 1SV225 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV225 Electronic Tuning Applications of FM Receivers • Low series resistance: rs = 0.35 typ. • Small package Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating

Contextual Info: SILICON EPITAXIAL PLANAR TYPE 1SV225 U nit in mm ELECTRONIC TU N IN G APPLICATIONS OF FM RECEIVERS. • • Low Seríes Resistance Small Package : rs = 0.35 Typ. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range

1SV225

Abstract: C30V
Contextual Info: 1SV225 東芝可変容量ダイオード シリコンエピタキシャルプレーナ形 1SV225 ○ FM チューナ電子同調用 単位: mm • 直列抵抗が小さい。: rs = 0.35 Ω 標準 • 外形が小さい。 絶対最大定格 (Ta = 25°C)

Contextual Info: 1SV225 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV225 Electronic Tuning Applications of FM Receivers • Low series resistance: rs = 0.35 typ. · Small package Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit

k192a

Abstract: c2458 C2498 C2668 C2717 C1923 Y C2499 k710 K241 C2995
Contextual Info: ALPHANUMERICAL INDEX Type No. Marking Page Type No. Marking 1SS154 BA 105 1SV217 T6 175 1SS239 SI 107 1SV224 T7 177 1SS241 TY 109 1SV225 V3 179 1SS242 S2 111 1SV226 TA 181 1SS268 BF 113 1SV227 T9 183 1SS269 BG 115 1SV228 V4 185 1SS271 BD 117 1SV229 T8 188

GENERAL SEMICONDUCTOR MARKING UD

Abstract: 1SV225
Contextual Info: TOSHIBA 1SV225 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 22 5 Unit in mm ELECTRONIC TUNING APPLICATIONS OF FM RECEIVERS. • • Low Series Resistance Small Package : rs = 0.35 Typ. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: SILICON EPITAXIAL PLANAR T Y P E VARIABLE CAPACITANCE DIODE 1SV225 Unit in mm ELECTRONIC TUNING APPLICATIONS OF FM RECEIVERS. • Low Series Resistance • Small Package + G.5 2.5 - a s : rs = 0.35 Typ. dd HO + 1 EI rfö A + I MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: 1SV225 TO SHIBA 1 SV2 2 5 TO SHIBA VAR IABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ELECTRONIC TU N IN G APPLICATIONS OF FM RECEIVERS. • • Low Series Resistance Small Package : rs = 0.35 Typ. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

1S1585

Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241
Contextual Info: Super-Mini Diodes SOT-23MOD, SOT-143MOD. F6 Mark Equivalent other package Type No. A3 1S1585 Anode common Cathode comon Electrical Characteristics (Ta=25°C) Type No. Application V r(V) IO(mA) trr (ns) Connection JX. Remarks 1SS181 High-speed switching 80

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

SCJ0004N

Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード

Variable Capacitance Diodes

Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
Contextual Info: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A

1SV200

Abstract: 1SV202 1SV210 1SV211 1SV213 470 NR 200 1SV222 1SV204 isv214 1SV209
Contextual Info: - 188 - * m 1SV200 % ft p & Bi * 5H ft ntf (V) (V) min 30 26. 5 2. 55 14. 01 2.10 10. 5 3. 3 26. 6 2. 61 26. 6 2. 61 3. 00 0. 60 33 2. 6 14 5. 5 35 3. 5 14. 16 2. 11 26 2. 5 10. 5 3. 3 33 2.6 13. 65 4. 95 13.88 2. 015 37 13. 2 41. 0 2. 7 28 2. 75 14 5. 5

marking code 62z

Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
Contextual Info: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX

smd code book

Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ

TA4029CTC

Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X
Contextual Info: 製品カタログ 2011-1 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8

RFM70U12D

Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック

JDV2S31CT

Abstract: 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 高周波用半導体デバイス 当社半導体製品につきましては格別のお引き立てを賜わり誠にありがとうございます。