C30V Search Results

MV2112

Contextual Info: K n o x S e m ic o n d u c t o r , I n c . GENERAL PURPOSE ABRUPT VARACTOR DIODES MV2101 - MV2115 MV2201 - MV2215 TYPE NUMBER MV2101 MV2102 MV2103 MV2104 MV2105 MV2106 MV2107 MV2108 MV2109 MV2110 MV2111 MV2112 MV2113 MV2114 MV2115 MV2201 MV2203 MV2205 MV2207

ecg semiconductors master replacement guide

Abstract: ecg master replacement guide mkl b32110 siemens mkp B32650 c945 p 331 ks transistor IC,MASTER master replacement guide Kennlinie KTY 10-6 siemens b32110 A2005 transistor
Contextual Info: Liebe Schuricht-Kunden, Ihre Zufriedenheit ist unser größtes Anliegen. Aus diesem Grunde versuchen wir, Ihnen Informationen und Ware stets zum richtigen Zeitpunkt verfügbar zu machen. Das gilt insbesondere auch für die Produkte der Siemens AG mit den drei

IR10M

Abstract: 1SV103 2l k
Contextual Info: b7 TOSHIBA {DI SCR ET E/O PTO } 9097250 TOSHIBA DFI^aiTasD DomatH 3 ^ | ~ 67C 09 36 4 CDIS C R E T E / O P T O Silicon Epitaxial Planar Type - 1SV103 Variable Capacitance Diode Unit in iran FM RADIO BAND TUNING APPLICATIONS. 4 .3 M AX. FEATURES : - . Low Series Resistance : rs=0.35Q Typ.)

variable capacitors

Abstract: Codi Semiconductor 1N5476 177SM7D K300 1N5461 1N5462 1N5463 1N5464 1N5465
Contextual Info: 1775470 C O D I S E M ICONDUCTOR llil INC 90 D 0 0 5 8 7 ¿ F |].7 7S 4 7a Daoasfl7 4 , CODI Semiconductor Inc. HIGH Q V O LTA G E V A R IA B L E CAPACITO R S 1N5461 thru 1N5476 IT HIGH Q - up to 6 0 0 VOLTAGE VARIABLE CAPACITORS for UHF tuning applications

C10V

Abstract: C13V ZMM55-C2V4 c18v
Contextual Info: ZMM55-C2V4 SERIES SURFACE MOUNT ZENER DIODES VOLTAGE 2.4 to 100 Volts MINI-MELF/LL-34 500 mWatts POWER Unit : inch mm FEATURES • Planar Die construction • 500mW Power Dissipation .063(1.6) • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA

marking TD

Contextual Info: TOSHIBA 1SV225 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE ELECTRONIC TUNING APPLICATIONS OF FM RECEIVERS. • Low Seríes Resistance • Small Package U nit in mm : rs = 0.35 Typ. MAXIMUM RATINGS (Ta = 255C) SYMBOL CHARACTERISTIC Reverse Voltage

1SV103

Contextual Info: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV103 FM R A D IO B A N D T U N IN G APPLICATIONS. • • Low Series Resistance : rs = 0.35U Typ.; Small Package. M A X IM U M RATINGS (Ta = 25°C CHARACTERISTIC Reverse Voltage Junction Tem perature

Diode Marking C.3

Abstract: 1SV225
Contextual Info: TOSHIBA 1SV225 1 SV2 2 5 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ELECTRONIC TUNING APPLICATIONS OF FM RECEIVERS. • • Low Series Resistance Small Package : rg = 0.35 Typ. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: ZMM55-C2V4 SERIES SURFACE MOUNT ZENER DIODES VOLTAGE 2.4 to 100 Volts MINI-MELF/LL-34 500 mWatts POWER Unit : inch mm FEATURES • Planar Die construction • 500mW Power Dissipation .063(1.6) • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA

Contextual Info: MM3Z2V4 . MM3Z47 200 mW MM3Z2V4 . MM3Z47 (200 mW) Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden für die Oberflächenmontage Version 2005-09-27 Maximum power dissipation Maximale Verlustleistung 1.7 200 mW 1 Nominal Z-voltage – Nominale Z-Spannung

1N5443

Abstract: 1N5448
Contextual Info: K n o x S e m ic o n d u c t o r , I n c . GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N5441 TO 1N5476 TYPE NU M BER CAPACITANCE @ - 4 Vdc • 1 MHz pF TU N IN G RATIO C*2 V / C-30V MIN MAX M IN Q UALITY FACTOR Q @ - 4 Vdc f = 50 M Hz 1N5441 1N5442 6.8 8.2 2.5

transistor SMD s72

Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p
Contextual Info: ВВЕДЕНИЕ Впервые, сделана столь масштабная попытка, разобраться с маркировкой компонентов поверхностного монтажа SMD . Конечно, книга не является панацеей, но на взгляд авторов должна существенно помочь в той

marking 6a2 smd

Abstract: zener Z11B
Contextual Info: SMD Zener Diodes Leadless - 500mW 500mW Marking Code Part No. TLZJ2.0A TLZJ2.0B TLZJ2.2A TLZJ2.2B TLZJ2.4A TLZJ2.4B TLZJ2.7A TLZJ2.7B TLZJ3.0A TLZJ3.0B TLZJ3.3A TLZJ3.3B TLZJ3.6A TLZJ3.6B TLZJ3.9A TLZJ3.9B TLZJ4.3A TLZJ4.3B TLZJ4.3C TLZJ4.7A TLZJ4.7B TLZJ4.7C

r46 arcotronics

Abstract: l6599 400w AN1792 L6599 application note l6562 flyback 70W MKP r71 86H-5410 Viper 12A smd Arcotronics r75 l6599 EVAL6599-400W-S
Contextual Info: AN2492 Application note Wide range 400W L6599-based HB LLC resonant converter for PDP application Introduction This note describes the performances of a 400 W reference board, with wide-range mains operation and power-factor-correction PFC and presents the results of its bench

2SC3668

Contextual Info: TOSHIBA 2SC3668 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3668 U nit in mm POWER SWITCHING APPLICATIONS • Low Saturation Voltage : V(^e (sat)~ 0.5V (Max.) • High Speed Switching Time : tstg= 1.0/^s (Typ.)

Zener c10v

Abstract: zener diodes color coded C27V C47V zener color codes colour code diode zener C62V TZMC12 C91V C24V
Contextual Info: 500mW Surface Mount Zener Diodes TZMC2V4 – TZMC100 500mW Surface Mount Zener Diodes Features • • • • • • • • Planar Die Construction 500mW Power Dissipation Very Sharp Reverse Characteristic Very High Stability Low Reverse Current Level Standard Zener Voltage Tolerance is ± 5 %

WZ-071

Abstract: wz-061 Zener c9v WZ 061 wz-040 eZ-081 WZ-046 WZ-075 Zener wz-192
Contextual Info: K ZEN ER VO LTAGE TYPE LOW NOISE V NOM. 500mW - 3.2 - 10 - 10 - WZ-061 WZ-065 BZ-061 BZ-065 BZ-071 WZ-075 6.1 6.5 7.1 BZ-075 BZ-081 WZ-081 7.5 8.1 - 10 30 10 30 0.5 10 30 0.5 10 30 10 - 100 4V,50MHz 1S2139-C 10-16® 4V 4~14® 10V - 100® 4V,50MHz - 40® 10V,50MHz

c24v

Abstract: c22v c36v C39V C47V C27V C62V C43V C75V c33v
Contextual Info: WILLAS ZMM55-C2V4 SERIES SURFACE MOUNT ZENER DIODES VOLTAGE 2.4 to 100 Volts MINI-MELF/LL-34 500 mWatts POWER Unit : inch mm FEATURES • Planar Die construction • 500mW Power Dissipation .063(1.6) • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA

bz 148

Abstract: 1S2588 WZ-061 Zener wz-192 WZ-071 WZ-090 WZ 061 Zener c9v WZ090 wz-040
Contextual Info: 7954734 SAKATA U S A CORP IP ? JRC DE I 7T S 4734 K ZENER DIODES ZEN ER VO LTAGE TYPE V NOM. - BZ-050 5.0 WZ-054 BZ-054 5.4 10 - 10 - 1W - - 0.5 - 10 30 10 30 EZ-062 WZ-061 BZ-061 6.1 0.5 10 30 EZ-065 WZ-065 BZ-065 6.5 0.5 10 30 EZ-070 WZ-071 BZ-071 7.1

variable capacitors

Abstract: 1N5681 1N5682 1N5683 1N5684 1N5685 1N5695 1N5696 1N5710 20CT
Contextual Info: '7^0'7-rf INTERNATIONAL SEMICOND 4TE D • In tern atio n al Semiconductor, In c . ^000376 O D O O O b ^ O ^ M I S n ^ ^ v o l t a g e v a r ia b l e c a p a c it o r s 1N5681 thru 1N5695 HIGH Q - HIGH TUNING RANGE VOLTAGE VARIABLE CAPACITORS for UHF tuning applications

Contextual Info: ZMM55-C2V4 SERIES SURFACE MOUNT ZENER DIODES 2.4 to 75 Volts VOLTAGE POWER 500 mWatts FEATURES • Planar Die construction • 500mW Power Dissipation 0.063 1.6 • Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA 0.020(0.5) 0.012(0.3)

Contextual Info: K n o x S e m ic o n d u c t o r , I n c . PLASTIC SURFACE MOUNT GENERAL PURPOSE ABRUPT VARACTOR DIODES SMV2101 - SMV2115 TYPE NUMBER SMV2101 1 + SMV2102 t + SMV2103 J + SMV2104 J + SMV2105 J + SMV2106 t + SMV2107 1 SMV21081 SMV2109 1 SMV2110 SMV2111* SMV2U2*

Contextual Info: K n o x S e m ic o n d u c t o r , I n c . GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N5441 TO 1N5476 TYPE NUMBER TUNING RATIO C-2 V / C-30V MIN MAX CAPACITANCE @ - 4 Vdc • 1 MHz pF 2.5 2.5 2.6 2.6 MIN QUALITY FACTOR Q @ - 4 Vdc f = 50 MHz 3.1 3.1 450 450

V2205

Abstract: MV2201 MV2213 MV2215 V2103 V2105
Contextual Info: K n o x S e m ic o n d u c t o r , in c . GENERAL PURPOSE ABRUPT VARACTOR DIODES MV2101 -M V 2115 MV2201 - MV2215 TYPE NU M BER CAPACITANCE @ - 4 Vdc 1 M H z pF MIN Q U A LITY FACTOR Q @ - 4 Vdc f = 50 M Hz CA PA C ITA N C E RATIO C-2V / C-30V MIN MV2101