1N5474 Search Results

Contextual Info: 1N5474BCHIP Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.68p‘ C1/C2 Min. Capacitance Ratio2.9 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.250 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleChip

Contextual Info: 1N5474B+JANTXV Diodes Varactor Diode Military/High-RelY Ct{Cj} Nom. F Junction Cap.68p‘ C1/C2 Min. Capacitance Ratio2.9 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.250 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)400m Semiconductor MaterialSilicon Package StyleDO-7

Contextual Info: 1N5474B06 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.68p C1/C2 Min. Capacitance Ratio2.9 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.250 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)250m Semiconductor MaterialSilicon Package StyleDO-7

Contextual Info: 1N5474B12 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.68p C1/C2 Min. Capacitance Ratio2.9 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.250 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)250m Semiconductor MaterialSilicon Package StyleDO-7

Contextual Info: 1N5474B18 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.68p C1/C2 Min. Capacitance Ratio2.9 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.250 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)250m Semiconductor MaterialSilicon Package StyleDO-7

Contextual Info: 1N5474B+JANTX Diodes Varactor Diode Military/High-RelY Ct{Cj} Nom. F Junction Cap.68p‘ C1/C2 Min. Capacitance Ratio2.9 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.250 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)400m Semiconductor MaterialSilicon Package StyleDO-7

Contextual Info: 1N5474B Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.68p‘ C1/C2 Min. Capacitance Ratio2.9 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.250 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)400m Semiconductor MaterialSilicon Package StyleDO-7

Contextual Info: MSI ELECTRONICS INC 3SE £ E3 5b5bMbb 000036b T E M S I T - 0 7 -/7 - HERMETICALLY SEALED GL AS S PACKAGED TUNING DIODES 08 D S D elect ABRUPT - HYPERABRU PT U E L E C T R IC A L C H A R A C T E R IS T IC S T a = 2 5 ° C unless otherwise noted GENERAL APPLICATIONS

1N5462

Abstract: varactor diode 1N5469 1N5449 1N5448 1N5441 to 1N5476 datasheet 1N5441 1N5442 1N5443 1N5444 1N5445
Contextual Info: KNOX SEMICONDUCTOR, INC. GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N5441 TO 1N5476 TYPE NUMBER CAPACITANCE @ - 4 Vdc • 1 MHz pF 6.8 8.2 10.0 12.0 15.0 18.0 20.0 22.0 27.0 33.0 39.0 47.0 56.0 68.0 82.0 100.0 1N5441 1N5442 1N5443 1N5444 1N5445 1N5446 1N5447

IN5142

Abstract: IN5142A MVAM106 1N5472A MV104g Motorola 1N547 MVAM115 1N5470A 226AA TO226AA
Contextual Info: TUNING, HOT CARRIER, AND PIN DIODES Motorola’s RF diodes are designed for electronic tuning, mixing, and switching high frequency signals. These diodes are available in the hermetic D 0 -2 0 4 A A DO-7 and low cost TO-226AA (TO-92) packages. Tuning Diodes

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

MSPD2018

Abstract: MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode
Contextual Info: Aeroflex / Metelics, Inc. Microwave Diodes & Passive Semiconductor Devices Microwave Diodes & Passive Semiconductor Devices Aeroflex / Metelics, Inc. Aeroflex / Metelics, Inc. East Coast Operations 54 Grenier Field Road, Londonderry, NH 03053 Tel: 603 641-3800

A-29 diode

Abstract: Voltage Variable Capacitance Diodes 1N5450A 1N5470A 1N5472A MV1650 N5447A 1N5441A 1N5140 1N5141
Contextual Info: 6367255 MOTOROLA SC P I O D E S /O P T O ÖT 89D 77450 DE |h3t,7SSS □077'4SD fi *T " 0 7 ~ /? General Purpose Abrupt Junction Tuning Diodes Voltage variable capacitance diodes for electronic tuning and control of RF circuits through UHF frequencies. Utilized

variable capacitors

Abstract: Codi Semiconductor 1N5476 177SM7D K300 1N5461 1N5462 1N5463 1N5464 1N5465
Contextual Info: 1775470 C O D I S E M ICONDUCTOR llil INC 90 D 0 0 5 8 7 ¿ F |].7 7S 4 7a Daoasfl7 4 , CODI Semiconductor Inc. HIGH Q V O LTA G E V A R IA B L E CAPACITO R S 1N5461 thru 1N5476 IT HIGH Q - up to 6 0 0 VOLTAGE VARIABLE CAPACITORS for UHF tuning applications

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

Contextual Info: I n t e r n a t io n a l S e m ic o n d u c t o r , I n c . 1N5458 VOLTAGE VARIABLE CAPACITORS thru V E R Y HIGH Q, LOW VOLTAGE, LOW L EA K A G E 3.9 TO 100 PF 1N5476C ELECTRICAL CHARACTERISTICS f CHARACTERISTICS - ALL TYPES T„ = 25 °C unless otherwise specified

1N5443

Abstract: 1N5448
Contextual Info: K n o x S e m ic o n d u c t o r , I n c . GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N5441 TO 1N5476 TYPE NU M BER CAPACITANCE @ - 4 Vdc • 1 MHz pF TU N IN G RATIO C*2 V / C-30V MIN MAX M IN Q UALITY FACTOR Q @ - 4 Vdc f = 50 M Hz 1N5441 1N5442 6.8 8.2 2.5

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

germanium transistor

Abstract: 2N5121 2N5418 2N5539 2N5637 V2205 MM8006
Contextual Info: INTRODUCTION I I N . . . INDEX Numerical index of ElA-registered device types, w ith major electrical specifications 2N . . . & 3N . . . INDEX Numerical index of ElA-registered device types, with major electrical specifications DEVICE INDEX Complete alpha-numeric index of all device types

philips ecg master replacement guide

Abstract: ecg semiconductors master replacement guide ECG transistor replacement guide book free philips ecg semiconductors master replacement guide oz 8602 gn AC digital voltmeter using 7107 smd glass zener diode color codes cd 1619 CP fm radio russian transistor cross-reference yd 7377
Contextual Info: Chapter 7 Component Data and References Component Data None of us has the time or space to collect all the literature available on the many different commercially available manufactured components. Even if we did, the task of keeping track of new and obsolete

in547

Abstract: in5448 IN5446 IN5450 IN5454 IN5461 IN5452 IN5444 IN5475 IN5466
Contextual Info: SÔE D TELEDYNE COMPONENTS ö T lT b O S HIG H Q Q U O tiL iS Ü ì @ • 1N5441 THRU S IL IC O N V A R A C T R O N 1N5476 V O L T A G E -V A R IA B L E C A P A C IT A N C E DIO D ES GEOMETRY 415 JA N A N D JA N -TX VER SIO N AVAILABLE IN5461-76 B A N D C

minor project proposal on electronics

Abstract: 436 diode MIL-S-19500/436 1N5466B JANTXV diode LN 4001 1N5476B 1N5461B 1N5461C 1N5462C 1N5463C
Contextual Info: MIL SPECS IC | D D D D i a S DQiattt. 4 | MIL-S-19500/436 USAF AMENDMENT 5 9 JANUARY 1984 suPEmunra- AMENDMENT 4 13 July 1972 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-VARIABLE CAPACITOR TYPES 1N5461B THRU 1N5476B AND 1N5461C THRU 1N5476C

30223 varactor sod323

Abstract: Zener c10v KSV1402-1412 SMV30224 30223 sod 323 1N5455 sod-523 varactor diodes MV1662 varactor diode 1N5469 varactor 1N5144
Contextual Info: VARACTORS SMV1401, 1402, 1403, 1404, 1405, 1406, 1407, 1408, 1409, 1410, 1411, SMV1412 TMV1401, 1402, 1403, 1404, 1405, 1406, 1407, 1408, 1409, 1410, 1411, TMV1412 SMV20411, 20412, 20413, 20414, SMV20415 SMV20422, 20423, 20424, SMV20425 SMV20432, 20433, 20434, 20435, 20436, SMV20437