1S93 Search Results

1r5gu

Abstract: IR5G 1NZ61 1R5BZ41 1R5BZ61 1R5DL41 1R5DL41A 1R5DU41 1R5DZ41 1R5DZ61
Contextual Info: - 24 li * m 1NU41 1NZ61 1QZS1 1R5BL41 1R5B241 1R5BZS1 1R5CL41 1R5DL41 1R5DL41A 1R5DU41 1R5DZ41 1R5DZ61 1R5GH45 1R5GU41 1R5GZ41 1R5GZ61 1R5JH45 1R5JU41 1R5JZ41 1R5JZ61 1R5LZ41 1R5NH45 1R5NU41 1R5NZ41 1R5TH61 1S90 1S90R 1S91 1S91R 1S92 1S92R 1S93 1S93R 1S96

IR5NU41

Abstract: 1NU 7 IR5D lS99 1i3h 1R5BZ41 1NZ61 1R5BZ61 1R5DL41 1S91
Contextual Info: - 24 li * m 1NU41 1NZ61 1QZS1 1R5BL41 1R5B241 1R5BZS1 1R5CL41 1R5DL41 1R5DL41A 1R5DU41 1R5DZ41 1R5DZ61 1R5GH45 1R5GU41 1R5GZ41 1R5GZ61 1R5JH45 1R5JU41 1R5JZ41 1R5JZ61 1R5LZ41 1R5NH45 1R5NU41 1R5NZ41 1R5TH61 1S90 1S90R 1S91 1S91R 1S92 1S92R 1S93 1S93R 1S96

Contextual Info: H M i n y S MwHmZFK 9 W U \ * M r t \ * 0 \ + t ¥ tm M M U ftojjJlWSr PßWßtKXt JiJvftjjx'iifflj ’ 140 C o m m e rc e Drive Montgomeryville, PA 1S936-1Ö13 _ _ ^ j e j : 2 1 5 )6 3 1 -9 8 4 0 S D 1 Ä 4 2 9 - 3 RF & MICROWAVE TRANSISTORS 450-512MHz CLASS C, MOBILE APPLICATIONS

IR5NU41

Abstract: 1NZ61 IR5BZ41 T 1S97 1i3h 1R5BZ41 1S101 IR5B IR5D IR5G
Contextual Info: - 24- li f i [5] # * m 1NU41 1NZ61 1QZS1 1R5BL41 1R5B241 1R5BZS1 1R5CL41 1R5DL41 1R5DL41A 1R5DU41 1R5DZ41 1R5DZ61 1R5GH45 1R5GU41 1R5GZ41 1R5GZ61 1R5JH45 1R5JU41 1R5JZ41 1R5JZ61 1R5LZ41 1R5NH45 1R5NU41 1R5NZ41 1R5TH61 1S90 1S90R 1S91 1S91R 1S92 1S92R 1S93

1S93C56-3

Contextual Info: ISSI 1S93C56-3 2,048-BIT SERIAL ELECTRICALLY ERASABLE PROM AUGUST 1995 FEATURES OVERVIEW • State-of-the-art architecture — N on-vo latile data storage — Low vo lta g e operation: 3.0V V cc = 2.7 V to 6.0V — Full T T L co m p a tib le inputs and outputs

Contextual Info: APR 2 2 1S93 f Z 7 SGS-THOMSON M»[I^(M iin(gS_ TDA7330 SINGLE CHIP RDS DEMODULATOR + FILTER A D V A N C E DATA • HIGH PERFORM ANCE, STABLE 57KHz FIL­ TER ■ FILTER ADJU STM EN T FREE AND W ITHOUT EXTERNAL COM PONENTS ■ PURELY DIGITAL RDS DEM ODULATION

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

OF sk 733

Abstract: 93C66 93c66 issi f 93c66 txal IS61C416 chip 8-pin 93C66 IS93C66
Contextual Info: ISSI IS93C66 4096-BIT SERIAL ELECTRICALLY ERASABLE PROM WITH 2V READ CAPABILITY FEATURES PRELIMINARY August 1990 PIN CONFIGURATIONS • State-of-the-Art Architecture — Non-volatile data storage — Single supply - 5V operation — Full TTL compatible inputs and outputs

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

Contextual Info: Tm '• - • * 1Meg x 4 Monolithic DRAM molaic M D M 4 1 0 0 0 -8 0 /1 0 /1 2 Issue 3.2 : June 1993 Semiconductor Pin Definition Package Type: 'K .'V .'G '.'W .'J' - 1,048,576 x 4 CMOS High Speed Dynamic RAM Features Row Access Time of 80,100,120 ns 5 Volt Supply ±10%

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

gw 6203

Abstract: ics gw 6203 cid vectra c str 6307 tim STR 6267 ic str 6307 STR 6253 alfa uv timer ASY 48 VI QT 239
Contextual Info: Profaca U V ectra BASIC is H e w le tt-P a c k a rd 's im p le m e n ta tio n o f th e GYV BASIC in te r p re te r fro m M icrosoft C o rp o ra tio n . Vectra BASIC is a n e x te n s io n to s ta n d a rd BASIC a n d tak es a d v a n ta g e o f th e facilities o ffe re d by 16-bit processors. Im p le m e n te d featu res

ED-95

Abstract: diode 1S93 1S93 GP1S93 marking s93
Contextual Info: SPEC. No. DATE: PREPARED BY: SHARP APPROVED BY: ELECTROMC DATE: ISSUE AFIfi3, 1996 COMPONENTS GROUP SW CORPORATION - SPECIFICATION I ED-95 122A OPTO-ELECTROMC DEVICES DIV. \ DEVICE SPECIFICATION FOR PHOTOINTERRUPTER MODEL LNO. 1S93 Specified for THOMSON

Contextual Info: Philips Semiconductors b b 5 3 ^ 31 DDSTEm M il H A P X UHF power transistor BLV194 bTE D — — AUER PHILIPS/DISCRETE FEATURES • Gold metallization ensures excellent reliability. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit.

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

Horizontal Transistor TT 2246

Abstract: ca3080 spice vogt transformer 406 69 CA3098 equivalent ICL8038 applications advantages disadvantages gi 9544 class d amplifier schematic hip4080 STR 6459 SEVEN PIN IC TRANSISTOR FOR POWER SUPPLY siemens transistor manual BUF601
Contextual Info: New High Speed Linear Products VIDEO OP AMPS AND BUFFERS HFA1105 LOW POWER VIDEO OP AMP HFA1115 I LOW POWER PROGRAMMABLE GAIN VIDEO BUFFER [ AnswerFAX DOCUMENT # 3395 AnswerFAX DOCUMENT * 3606 • -3dB Bandwidth Ay * + 2 . 350MHz

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

ha2526

Abstract: HA7-2620 HA-2620 HA2622 HA-2625-5 HA2625 2625-5 HA2-2625-5
Contextual Info: HARRIS SEMICOND SECTOR m W blE ] • 43G2B71 004bSM5 117 H H A S HA-2620, HA-2622 HARRIS HA-2625 SEMICONDUCTOR Very Wideband, Uncompensated Operational Amplifiers RN M SO B3 Features Description • Gain Bandwidth Product Ay 2 5). 100MHz • High Input Im pedance.500MQ

SN54LVT18502

Abstract: LVT18502 LVT182502 SN74LVT182502 SN74LVT18502 GSM Transceiver 1994
Contextual Info: SN54LVT18502, SN54LVT182502, SN74LVT18502, SN74LVT182502 3.3-V ABT SCAN TEST DEVICES WITH 18-BIT UNIVERSAL BUS TRANSCEIVERS Members of the Texas Instruments SCOPE Family of Testability Products Members of the Texas Instruments Widebus ™ Family Compatible With the IEEE Standard

HB 100B

Abstract: 1S93 BUK545 BUK545-100B
Contextual Info: PHILIPS INTERNATIONAL bSE D B 711082b OObMSDl Philips Semiconductors bfib H P H I N Product Specification PowerMOS transistor BUK545-100A/B Logic level FET_ _ GEN ER AL DESCRIPTION N-channei enhancement mode logic level field-effeet power

74LS92 TTL Divide By Twelve Counters

Abstract: N7490A IC 74LS93 of IC 74LS93 sn54ls92j
Contextual Info: SN5490A, SN5492A, SN5493A, SN54LS90, SN54LS92, SN54LS93, SN7490A, SN7492A, SN7493A, SN74LS90, SN74LS92, SN74LS93 DECADE. DIVIDE BY TWELVE AND BINARY COUNTERS MARCH 1974 —R EV ISED MARCH 1988 '90A. LS90 . . . Decade Counters '92A, LS92 . . . Divide By-Twelve Counters

T35W

Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Contextual Info: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,

JZ2 transistor

Abstract: 1S93 BUK454-500B T0220AB ADl40
Contextual Info: bSE J> PHILIPS INTERNATIONAL 711Qfl2b O O b H Q b l 2 ^ Philips Semiconductors BUK454-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

crt controller 6845

Abstract: PARADISE VGA WD90C22 352AS 3S-11 PR11 free 74ls74 pin configurations plasma displays Display theory paradise Western digital 8514
Contextual Info: I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I WD90C22 TABLE OF CONTENTS Section Title 1.0 INTRODUCTION 1.1 Description 1.2 Features 15-1 15-1 15-1 2.0 THEORY OF OPERATION 2.1 WD90C22 Interfaces 15-2