1R5DL41 Search Results

Contextual Info: SILICON EPITAXIAL JUNCTION TYPE HIGH EFFICIENCY RECTIFIER HED 1R5DL41A SWITCHING TYPE POWER SUPPLY APPLICATIONS. Repetitive Peak Reverse Voltage VRRM=200V Average Forward Current F (AV) =1.5A (Ta=25°C) 35ns (Max.) Very Fast Reverse-Recovery Time v^o .g sv

Contextual Info: 1R5DL41A TOSHIBA High Efficiency Rectifier HED Silicon Epitaxial Junction Type 1R5DL41A Switching Mode Power Supply Applications • Unit: mm Repetitive Peak Reverse Voltage: VRRM = 200 V • Average Forward Current: IF (AV) = 1.5 A (Ta = 25°C) • Very Fast Reverse-Recovery Time: trr = 35 ns (max)

Contextual Info: TOSHIBA 1R5DL41A TO S H IB A HIGH EFFICIENCY RECTIFIER HED SILICON E PITAX IAL JU NC TIO N TYPE 1 R5DL41A Unit in mm SW ITCHING TYPE POWER SUPPLY APPLICATIO NS €E Repetitive Peak Reverse Voltage : V r r m = 200 V Average Forward Current : Ip (AV) = 1.5 A (Ta = 25°C)

1r5gu

Abstract: IR5G 1NZ61 1R5BZ41 1R5BZ61 1R5DL41 1R5DL41A 1R5DU41 1R5DZ41 1R5DZ61
Contextual Info: - 24 li * m 1NU41 1NZ61 1QZS1 1R5BL41 1R5B241 1R5BZS1 1R5CL41 1R5DL41 1R5DL41A 1R5DU41 1R5DZ41 1R5DZ61 1R5GH45 1R5GU41 1R5GZ41 1R5GZ61 1R5JH45 1R5JU41 1R5JZ41 1R5JZ61 1R5LZ41 1R5NH45 1R5NU41 1R5NZ41 1R5TH61 1S90 1S90R 1S91 1S91R 1S92 1S92R 1S93 1S93R 1S96

Contextual Info: 1R5DL41A TOSHIBA High Efficiency Rectifier HED Silicon Epitaxial Junction Type 1R5DL41A Switching Mode Power Supply Applications • Unit: mm Repetitive Peak Reverse Voltage: VRRM = 200 V · Average Forward Current: IF (AV) = 1.5 A (Ta = 25°C) · Very Fast Reverse-Recovery Time: trr = 35 ns (max)

1R5DL41A

Contextual Info: 1R5DL41A TOSHIBA High Efficiency Rectifier HED Silicon Epitaxial Junction Type 1R5DL41A Switching Mode Power Supply Applications • Unit: mm Repetitive Peak Reverse Voltage: VRRM = 200 V • Average Forward Current: IF (AV) = 1.5 A (Ta = 25°C) • Very Fast Reverse-Recovery Time: trr = 35 ns (max)

Contextual Info: 1R5DL41 TOSHIBA High Efficiency Rectifier HED Silicon Epitaxial Junction Type 1R5DL41 Switching Mode Power Supply Application • Repetitive Peak Reverse Voltage: VRRM = 200 V • Average Forward Current: IF (AV) = 1.5 A (Ta = 25°C) • Very Fast Reverse-Recovery Time: trr = 60 ns (max)

TOSHIBA DLA

Abstract: 1R5DL41A 1R5DL41 TOSHIBA RECTIFIER
Contextual Info: 1R5DL41A TOSHIBA High Efficiency Rectifier HED Silicon Epitaxial Junction Type 1R5DL41A Switching Mode Power Supply Applications • Unit: mm Repetitive Peak Reverse Voltage: VRRM = 200 V • Average Forward Current: IF (AV) = 1.5 A (Ta = 25°C) • Very Fast Reverse-Recovery Time: trr = 35 ns (max)

1R5DL41A

Abstract: dla toshiba
Contextual Info: 1R5DL41A TOSHIBA High Efficiency Rectifier HED Silicon Epitaxial Junction Type 1R5DL41A Switching Mode Power Supply Applications • Repetitive Peak Reverse Voltage: VRRM = 200 V • Average Forward Current: IF (AV) = 1.5 A (Ta = 25°C) • Very Fast Reverse-Recovery Time: trr = 35 ns (max)

IR5NU41

Abstract: 1NU 7 IR5D lS99 1i3h 1R5BZ41 1NZ61 1R5BZ61 1R5DL41 1S91
Contextual Info: - 24 li * m 1NU41 1NZ61 1QZS1 1R5BL41 1R5B241 1R5BZS1 1R5CL41 1R5DL41 1R5DL41A 1R5DU41 1R5DZ41 1R5DZ61 1R5GH45 1R5GU41 1R5GZ41 1R5GZ61 1R5JH45 1R5JU41 1R5JZ41 1R5JZ61 1R5LZ41 1R5NH45 1R5NU41 1R5NZ41 1R5TH61 1S90 1S90R 1S91 1S91R 1S92 1S92R 1S93 1S93R 1S96

Contextual Info: 1R5DL41A TOSHIBA High Efficiency Rectifier HED Silicon Epitaxial Junction Type 1R5DL41A Switching Mode Power Supply Applications • Unit: mm Repetitive Peak Reverse Voltage: VRRM = 200 V • Average Forward Current: IF (AV) = 1.5 A (Ta = 25°C) • Very Fast Reverse-Recovery Time: trr = 35 ns (max)

1R5DL41A

Contextual Info: TOSHIBA 1R5DL41A TOSHIBA HIGH EFFICIENCY RECTIFIER HED SILICON EPITAXIAL JUNCTION TYPE 1 R5DL41A Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATIONS Repetitive Peak Reverse Voltage : V rrm = 200V Average Forward Current : If (a v ) = 1.5A (Ta = 25°C) Very Fast Reverse-Reeovery Time : trr = 35ns (Max.)

IR5NU41

Abstract: 1NZ61 IR5BZ41 T 1S97 1i3h 1R5BZ41 1S101 IR5B IR5D IR5G
Contextual Info: - 24- li f i [5] # * m 1NU41 1NZ61 1QZS1 1R5BL41 1R5B241 1R5BZS1 1R5CL41 1R5DL41 1R5DL41A 1R5DU41 1R5DZ41 1R5DZ61 1R5GH45 1R5GU41 1R5GZ41 1R5GZ61 1R5JH45 1R5JU41 1R5JZ41 1R5JZ61 1R5LZ41 1R5NH45 1R5NU41 1R5NZ41 1R5TH61 1S90 1S90R 1S91 1S91R 1S92 1S92R 1S93

Contextual Info: 1R5DL41A T O SH IB A T O SHIBA HIGH EFFICIENCY RECTIFIER HED SILICON EPITAXIAL JUNCTION TYPE 1R5DL41A Unit in mm SW ITCHING TYPE POWER SUPPLY APPLICATIONS Repetitive Peak Reverse Voltage : V r r m = 200 V Average Forward Current : Ip(AV) = l-5A (Ta = 25°C)

Contextual Info: 1R5DL41A TOSHIBA TOSHIBA HIGH EFFICIENCY RECTIFIER HED SILICON EPITAXIAL JUNCTION TYPE 1 r rn i d1 a Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATIONS Repetitive Peak Reverse Voltage V r r M = 200V Average Forward Current IF(AV) = 1-5A (Ta = 25°C) V pru

Contextual Info: 1R5DL41A TOSHIBA High Efficiency Rectifier HED Silicon Epitaxial Junction Type 1R5DL41A Switching Mode Power Supply Applications • Unit: mm Repetitive Peak Reverse Voltage: VRRM = 200 V • Average Forward Current: IF (AV) = 1.5 A (Ta = 25°C) • Very Fast Reverse-Recovery Time: trr = 35 ns (max)

smd 1gw

Abstract: diode Z47 1ZB36 1ZB20 zener U1DL49 1ZB20 6B4B41 FAST RECOVERY DIODE 200ns 2a 1B4B41 J2C42
Contextual Info: a SELECTOR GUIDE The following products are recommended for use in any new circuitry designs. General Purpose Rectifiers —> Peak Repetitive Reverse Voltage 600V 1000V 1S 1887 1S 1888 1S 1830 S5277B S5277G S5277J S5277N D O -41S S5566B S5566G S5566J S5566N

1ZB36

Abstract: 2z47 1J4B41 1B4B42 100L6P43 1Z16 6G4B41 3Z150 30L6P45 10GL2CZ
Contextual Info: 1 PART NUMBER INDEX P art No. 05B4B48 05G4B48 05GU4B48 05J4B48 05NH45 05NH46 05NU41 05NU42 0R8GU41 100G6P43 100L6P43 100Q6P43 100U6P43 10B4B41 10DL2C41A 10DL2C48A 10DL2CZ47A 10FL2C48A 10FL2CZ47A 10G4B41 10GL2CZ47A 10GWJ2C48C 10GWJ2CZ47C 10J4B41 10JL2CZ47 10JWJ2CZ47

BY228 equivalent

Abstract: BYD14G RU20A cross reference
Contextual Info: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book Sinterglass Avalanche Diodes vishay semiconductors vSE-db0112-1009 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

zener diode 1NU 9F

Abstract: diode 1NU DLA DIODE TOSHIBA diode 1NU 7.1 NH5 Diode Schottky diode TO220 15A 1000V diode 1NU 5.1 diode 1NU 6F 10lc48 GU 1R5
Contextual Info: 2004-3 PRODUCT GUIDE Small and Medium Diodes semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Contents 1. Diode Product Tree 3 2. Selection Guide by Product Categories 4 3. Definitions and Terms 8 4. Symbols and Terms 9 5. Device Characteristics 5.1 General-Purpose Rectifiers:

1gw transistor

Abstract: TSA1000 1J4B41 1G4B41 1B4B41 magnetron power control scr driver ic for rectifier 3 phase scr drive circuit diagram 4G4B41 1B4B42
Contextual Info: mAPPLICATION CIRCUIT 1. Igniter . 448 2. Strobe . 449

bvy27-200

Abstract: BY228 equivalent ERD29-08 ERC06-15s ERC05-10b BYD14J RGP15J equivalent BYD14G ERD28-06S BVY28-200
Contextual Info: VISHAY Vishay Semiconductors Cross Reference This guide includes a code letter system which designates the compatibility between Vishay Semiconductors devices and those of other manufacturers. Code Definitions 1 = equivalent 2 = minor electrical difference

S6A35

Abstract: SF3G42 SF10JZ47 S6785G SF3J42 1R5GU41 S6A37 SCR S6A37 GT8G132 SM3GZ47
Contextual Info: [ 9 ] 応用回路例 [ 9 ] 応用回路例 1. スイッチング電源 1 自励式シングルフライバック方式 (RCC) 応用回路例 交 交流入力 二次整流 ダイオード 流 フィルタ + 直流出力 − 差動増幅 回 路 駆動用

1ZB36

Abstract: 0R1QYZ41 4D4B44 6b4b41 4D4B41 s5502n 0R1NYZ41 30jh11 10L6P44 30L6P43A
Contextual Info: [ 10 ] 保守廃止品種一覧表 [ 10 ] 保守廃止品種一覧表 次の品種が保守品種および廃止品種となっております。新規採用は代替推奨品種にてご検討くださいま すようお願いいたします。 2003-3-1 現在