1S91 Search Results

1r5gu

Abstract: IR5G 1NZ61 1R5BZ41 1R5BZ61 1R5DL41 1R5DL41A 1R5DU41 1R5DZ41 1R5DZ61
Contextual Info: - 24 li * m 1NU41 1NZ61 1QZS1 1R5BL41 1R5B241 1R5BZS1 1R5CL41 1R5DL41 1R5DL41A 1R5DU41 1R5DZ41 1R5DZ61 1R5GH45 1R5GU41 1R5GZ41 1R5GZ61 1R5JH45 1R5JU41 1R5JZ41 1R5JZ61 1R5LZ41 1R5NH45 1R5NU41 1R5NZ41 1R5TH61 1S90 1S90R 1S91 1S91R 1S92 1S92R 1S93 1S93R 1S96

IR5NU41

Abstract: 1NU 7 IR5D lS99 1i3h 1R5BZ41 1NZ61 1R5BZ61 1R5DL41 1S91
Contextual Info: - 24 li * m 1NU41 1NZ61 1QZS1 1R5BL41 1R5B241 1R5BZS1 1R5CL41 1R5DL41 1R5DL41A 1R5DU41 1R5DZ41 1R5DZ61 1R5GH45 1R5GU41 1R5GZ41 1R5GZ61 1R5JH45 1R5JU41 1R5JZ41 1R5JZ61 1R5LZ41 1R5NH45 1R5NU41 1R5NZ41 1R5TH61 1S90 1S90R 1S91 1S91R 1S92 1S92R 1S93 1S93R 1S96

IR5NU41

Abstract: 1NZ61 IR5BZ41 T 1S97 1i3h 1R5BZ41 1S101 IR5B IR5D IR5G
Contextual Info: - 24- li f i [5] # * m 1NU41 1NZ61 1QZS1 1R5BL41 1R5B241 1R5BZS1 1R5CL41 1R5DL41 1R5DL41A 1R5DU41 1R5DZ41 1R5DZ61 1R5GH45 1R5GU41 1R5GZ41 1R5GZ61 1R5JH45 1R5JU41 1R5JZ41 1R5JZ61 1R5LZ41 1R5NH45 1R5NU41 1R5NZ41 1R5TH61 1S90 1S90R 1S91 1S91R 1S92 1S92R 1S93

TMS320P17

Abstract: d6151 filter lark eng 1D2T ltw 8 pin TMS320P14 TMS320LC15
Contextual Info: TMS320C1X DIGITAL SIGNAL PROCESSORS J A N U A H Y 1 9 8 7 — R E V IS E D J U L Y 1991 • Performance Up to 8.77 MIPs Commercial and Military Versions Available • All TMS320C1x Devices are Object Code Compatible Operating Free-Air Temperature . . . 0°C to 70°C

Contextual Info: November 1991 Edition3.0 FUJITSU DATA SHEET M B 8 1 4 4 0 0 -80•/-1o/-12 CMOS 1 M X 4 BIT FAST PAGE MODE DRAM CMOS 1,048,576 x 4 bit Fast Page Mode Dynamic RAM The Fujitsu MB814400 is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304 memory cells accessible in 4-bit increments. The MB814400 features a fa st page" mode of

814400

Abstract: marking CEZ MAS 10 RCD mb814400 MB814400-10 MB814400-12 MB814400-80 ZIP-20P-M02 marking Z1p
Contextual Info: Novem ber 1991 Edition3.0 :• , .-y,-.:. FUJITSU . DATASHEET M B 8 1 4400-80/-10/-12 CMOS 1 M X 4 B I T FAST PAGE MODE DRAM CM O S 1,048,576 x 4 bit Fast Page Mode Dynamic RAM The Fujitsu MB814400 is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

C3317

Abstract: S95 SMD 1S91 BDS950 BDS952 BDS954 BDS956
Contextual Info: PHILIPS INTERNATIONAL SbE D • 7110fl2b D O M B n b 7TS « P H I N Philips Components Data sheet status Product specification date of issue April 1991 BDS950/952/954/956 P » - '7 PNP Silicon epitaxial base power transistors D ESCRIPTIO N PINNING - SOT223

W1P 59 transistor

Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Contextual Info: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors

smd transistor ng hf

Abstract: smd transistor NG transistor smd LC 77 SMD Transistor 1f 1S91 BLU86 1c smd transistor
Contextual Info: Product «pacification Philip» Semiconductora BLU86 UHF power transistor FEATURES Q UIC K REFER EN CE DATA RF performance at Ts S 60 '’C in a common emitter dass-B test circuit see • SM D encapsulation note 1 . « Emitter-ballasting resistors for optimum temperature profile

TMS3401

Abstract: SPVU001 MD653 SPVU001B ls 010s 100s MS3401
Contextual Info: TM S3 4 0 1 0 GRAPHICS SY ST EM PROCESSOR SPVS002C • • • TOP VIEW 1 3 2 ns . . ( T M S 3 4 0 1 0 6 0 ) 1 6 0 ns . . ( T M S 3 4 0 1 0 - 5 0 ) 2 0 0 ns . (T M S 3 4 0 1 0 -4 0 ) Fully P rog ra m m a b le 32 -B it General-Purpose P roc e ss or w i t h 1 2 8 - M e g a b Y tc A d d re s s

VSB20

Contextual Info: p ilC R O N IT/AT/XT* SPECIFICATION - 16K SRAM FAMILY ABSOLUTE MAXIMUM RA TIN G S* X T .-55°C to+125=C ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS -4 0 °C < T a < 85°C ; -4 0 ° C < T A < 125°C ; -5 5 °C <

Contextual Info: PRELIMINARY SRAM 32Kx 9 SRAM FEATURES PIN ASSIGNMENT Top View • High speed: 15, 17, 20 and 25ns • H igh-perform ance, low -pow er CM O S double-m etal process • Single +5V ±10% pow er supply • Easy m em ory expansion w ith CE1, CE2 and OE options

D316251

Abstract: DM11000 zAO5 A27CZ RC 4565
Contextual Info: 1M x 1 DRAM molai c M D M 11000-80/10/12/15 Issue 3.1 : O c to b e r 1991 S ' Pin Definitions Package Type: T.V 1,048,576 x 1 CMOS High Speed Dynamic RAM Features 1 18 GND WE 2 17 ^OJT RAS 3 16 CAS NO 4 AO 5 Al 6 CZ CZ A2 7 d A3 5« Row Access Times of 80,100/120/150 ns

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

486dx isa bios opti

Abstract: 82C496 opti 486 chipset opti 82c496 OPTi chipset 486 opti 82c206 opti 486 chipset 82c206 T227 opti 8254
Contextual Info: MSR T. *.m OPTi-DXBB DATABOOK Version 12 PRELIMINARY OPTi-DXBB PC/AT Chipset 82C496/82C206 Preliminary 82C496 DATA BOOK Version 1.2 OPTi, Inc. 2525 Waish Avenue, Santa Clara, CA 95051 U.S.A. page 1 OPTi-DXBB DATABOOK Version 1.2 PRELIMINARY Disclaimer This specification is subject to change without notice. OPTi, Incorporated assumes no responsibility

DIODE MOTOROLA B34

Abstract: DIODE MOTOROLA B33 diode schottky B34 1S91
Contextual Info: Order this data shwrt by MBRS320T3/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBRS320T3 MBRS330T3 MBRS340T3 Su rface M o u n t Sc h o ttk y Pow er Rectifiers . em ploying the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and

intel 8288

Abstract: intel 8288 bus controller 8085 MICROCOMPUTER SYSTEMS USERS MANUAL 8086 interrupt structure design fire alarm 8088 microprocessor RCA SK CROSS-REFERENCE 8086 family users manual 8086 user manual AP 67 weir smm 200
Contextual Info: iAPX 86, 88 USER'S MANUAL AUGUST 1981 Intel Corporation makes no warranty for the use of its products and assumes no responsibility for any errors which may appear in this document nor does it make a commitment to update the information contained herein. Intel software products are copyrighted by and shall remain the property of Intel Corporation. Use, duplication or

Contextual Info: Product specification Ph ilip * S em iconductors BLU86 UHF power transistor F EA T U R ES • SM D encapsulation Q U ICK R E F E R E N C E DATA R F performance at Ts S 60 “C in a common emitter dass-B test circuit see note 1 . • Emitter-ballasting resistors for

Contextual Info: MT5C1009 SRAM 128Kx 8 SRAM WITH SINGLE CHIP ENABLE FEATURES PIN ASSIGNMENT Top View • • • • High speed: 20, 2 5 ,3 5 ,4 5 , 55 and 70ns A utom atic C hip Enable pow er dow n All inputs and outputs are TTL com patible H igh-perform ance, low -pow er C M O S double-m etal

52C9007

Abstract: IC-724
Contextual Info: PRELIMINARY p ilC R O N MT52C9007 F IF O 5 1 2 x 9 F IF O WITH PROGRAMMABLE FLAGS FEATURES • • • • • • • • w [j 1 Dd j M A R K IN G tim e tim e tim e tim e •’C 7 28 q 1 28 1 V cc i r ] Ü5' D9 2 27 ] D5 26 j De D4 C 3 26 D6 D3 [ 4 25

BFG55A

Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
Contextual Info: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors

st178

Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment

BA100 diode

Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any