1RF35 Search Results

IRF449

Abstract: irf362 irf413 IRF352 IRF353 IRF360 IRF421 IRF430 IRF433 IRF441
Contextual Info: - 25 2 - Mi m *± « % Vds Vg s or * Vd g % 1RF35! IRF353 IR !R IR IRF360 IRF362 IRF420 IRF421 IRF422 IRF423 IRF430 IRF431 IRF432 IRF433 IRF440 IRF441 IRF442 IRF443 IRF448 IRF449 IRF450 IRF451 IRF452 IRF453 IRF460 IRF462 IRF510 IR IR IR IR IR IR IR IR IR IR

1RF620

Abstract: 1RF530 1rf521 1rf630 IRF449 RF543 irf362 IRF352 IRF353 IRF421
Contextual Info: - 252 - Mi m *± « % Vds Vg s or * Vd g % 1RF35! IRF353 IR !R IR IRF360 IRF362 IRF420 IRF421 IRF422 IRF423 IRF430 IRF431 IRF432 IRF433 IRF440 IRF441 IRF442 IRF443 IRF448 IRF449 IRF450 IRF451 IRF452 IRF453 IRF460 IRF462 IRF510 IR IR IR IR IR IR IR IR IR IR

IRF360

Abstract: irf362 IRF448 IRF449 IRF352 IRF353 IRF421 IRF430 IRF433 IRF441
Contextual Info: - 252 - Mi m *± « % Vds Vg s or * Vd g % 1RF35! IRF353 IR !R IR IRF360 IRF362 IRF420 IRF421 IRF422 IRF423 IRF430 IRF431 IRF432 IRF433 IRF440 IRF441 IRF442 IRF443 IRF448 IRF449 IRF450 IRF451 IRF452 IRF453 IRF460 IRF462 IRF510 IR IR IR IR IR IR IR IR IR IR

IRF411

Abstract: IRF449 1RF540 irf413 1RF620 1rf520 irf362 IRF352 IRF353 IRF421
Contextual Info: - 252 - Mi m *± « % Vds Vg s or * Vd g % 1RF35! IRF353 IR !R IR IRF360 IRF362 IRF420 IRF421 IRF422 IRF423 IRF430 IRF431 IRF432 IRF433 IRF440 IRF441 IRF442 IRF443 IRF448 IRF449 IRF450 IRF451 IRF452 IRF453 IRF460 IRF462 IRF510 IR IR IR IR IR IR IR IR IR IR

irf350

Abstract: 1RF35 2clg
Contextual Info: HE D I MflSS4S2 GQOTISE T | INTERNATIONAL RECTIFIER Data Sheet No. PD-9.304G T - lî z L l— INTERNATIONAL RECTIFIER IOR HEXFET TRANSISTORS IRF3SO fo IRF351 IRF3SS IM - C h a n n e l IRF353 Features: 400 Volt, 0.3 Ohm HEXFET The HEXFET technology is the key to International

irf411

Abstract: IRF413 IRF449 IRF448 irf362 IRF352 IRF353 IRF360 IRF421 IRF430
Contextual Info: - 252 - Mi X m % *± « * % Vd s or Vdg V £ Vg s Pd Id * /CH (V) 11 fé (Ta= 25 tJ) (A) Vg s th) I d ss I g ss * /CH <W) min (nA) Vg s (V) (u A ) Vd s (V) (V) Id («A ) fó f Ds(on) Vrs= Vg s max (V) % te (Ta=25cO ) I d ( on) C i ss g fs Coss C rss % &

1RF350

Abstract: Transistor IRF 044 IRF3503 TRANSISTOR 2SC 635 08/bup 3110 transistor
Contextual Info: MOTOROLA SC I X S T R S /R F IM E D • MOTOROLA 005^75 ■i SEM ICONDUCTOR I 1 j IRF350 IRF351 IRF352 TECHNICAL DATA Part Number Voss 'DS on N-CHANNEL ENHANCEMENT-MODE SILICON GATE TM O S POWER FIELD EFFECT TRANSISTOR IRF350 400 V 0.3 a IRF351 350 V 0.3 n

Contextual Info: • M 3 0 2 5 7 1 D 0 S 3 T 4 a 2 HARRIS 7 f l b ■ H A S IR F350/351/352/353 IRF350R/351R/352R/353R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package TO-2Q4AA • 13A and 15.0A, 350V - 400V • i"DS on) = ° -3 fi and 0 .4 fi

1RF540

Abstract: 1RF620 IRF449 1RF530 RF543 1rf521 irf362 irf413 IRF461 IRF352
Contextual Info: - 252 - Mi X m *± % Vd s or « * % £ Vg s Pd Id Vg s th Id s s Ig s s fó % f Ds on) Vrs= te (Ta=25cO ) Id (on) Ci ss g fs Coss Crss * /CH (V) (A) * /CH <W) min (nA) Vg s (V) (uA) Vd s (V) (V) max (V) Id («A) % & m n V g s =0 Vg s Vd g (V) 11 fé (Ta=25tJ)

irf244

Abstract: IRF351 IRF242 IRF243 IRF245 IRF252 1RF450 1RF430 1RF340 T0204AA
Contextual Info: - gj £ *± € ft A £ t§ <Ta=25^C Vd s or Vd g Vg s Pd Id * /CH a Ig s s rain * /CH Vg s * V) (V) (W) (A) V g s th) Id s s (nA) (V) (HA) (V) (V) (V) ft Id (nA) & & F os(on) Vd s = Vg s max Vd s m Id (on) Ciss g fs Coss ft Crss V g s =0 (max) *typ V g s

irf113

Abstract: 1RF440 1RF450 irf244 IRF242 IRF243 IRF245 IRF252 1RF340 Siliconix
Contextual Info: - ft A gj £ *± V ds or € £ Vgs t§ <Ta=25^C Pd Id m a Ig s s V gs th ) Id s s ft & F o s o n ) Vd s = & I d (on) Coss C is s g fs * /CH rain * /CH Vg s =0 ( * ty p ) ( * ty p ) (* ty p ) Id (max) (max) (max) Vd s (A) (pF) (pF) (pF) (V) (max) max Id

IRF 544 N MOSFET

Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no

NLY4

Abstract: 1RF35
Contextual Info: ¡ 2 H A R R I S /R F 3 5 0 / 3 5 1 / 3 5 2 /3 5 3 IR F 3 5 0 R /3 5 1 R /3 5 2 R /3 5 3 R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -20 4 A A • 1 3 A a n d 1 5 .0 A , 3 5 0 V - 4 0 0 V • r D S o n = ° - 3 f i a n d 0 . 4 f l

1RF350

Abstract: 1RF320 irf244 IRF242 IRF243 IRF245 IRF252 1RF450 Siliconix
Contextual Info: - ft A gj £ *± Vd s or € £ Vg s Pd Id m a t § <Ta=25^C Ig s s Vg s Id s s th) ft & F os on) Vd s = & I d (on) Coss Ciss g fs * /CH rain * /CH Vg s = 0 (*typ) (*typ) (*typ) Id *typ Vg s *typ Id (max) (max) (max) Vd s (A) (A) (V) (S) (A) (pF) (pF) (pF)

IRF350

Abstract: 57113 IRF350-353 IRF3503
Contextual Info: FAIRCHILD SEMICONDUCTOR â4 0GE7T1G S IRF350-353 N-channel Pow er MOSFETs, 15 A, 350 V /4 0 0 V £ £ ii£ £ Ü Ü £ A Schlumberger Company _ _ Power And Discrete Division Description These devices are n-channel, enhancement mode, power M OSFETs designed especially for high voltage, high speed

IRF413

Abstract: 1RF530 IRF449 IRF460 RF543 samsung irf540 1RF540 1RF620 irf362 IRF448
Contextual Info: - 244 - f ä! SD210 SD211 SD212 S0213 S02T4 SD215 SD211 SD219 BS107P BSI07PT BSUOF BS17ÜP DS250F BS250P 1RF 520 IRF521 IRF522 IRF523 IRF530 IRF531 IRF532 IRF533 IRF620 IRF621 IRF622 IRF623 IRF630 IRF631 1RF632 IRF633 € tt € CALOGIC CALOGIC CALOGIC CALOGIC