1N5476 Search Results

1N5462

Abstract: varactor diode 1N5469 1N5449 1N5448 1N5441 to 1N5476 datasheet 1N5441 1N5442 1N5443 1N5444 1N5445
Contextual Info: KNOX SEMICONDUCTOR, INC. GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N5441 TO 1N5476 TYPE NUMBER CAPACITANCE @ - 4 Vdc • 1 MHz pF 6.8 8.2 10.0 12.0 15.0 18.0 20.0 22.0 27.0 33.0 39.0 47.0 56.0 68.0 82.0 100.0 1N5441 1N5442 1N5443 1N5444 1N5445 1N5446 1N5447

variable capacitors

Abstract: Codi Semiconductor 1N5476 177SM7D K300 1N5461 1N5462 1N5463 1N5464 1N5465
Contextual Info: 1775470 C O D I S E M ICONDUCTOR llil INC 90 D 0 0 5 8 7 ¿ F |].7 7S 4 7a Daoasfl7 4 , CODI Semiconductor Inc. HIGH Q V O LTA G E V A R IA B L E CAPACITO R S 1N5461 thru 1N5476 IT HIGH Q - up to 6 0 0 VOLTAGE VARIABLE CAPACITORS for UHF tuning applications

Contextual Info: I n t e r n a t io n a l S e m ic o n d u c t o r , I n c . 1N5458 VOLTAGE VARIABLE CAPACITORS thru V E R Y HIGH Q, LOW VOLTAGE, LOW L EA K A G E 3.9 TO 100 PF 1N5476C ELECTRICAL CHARACTERISTICS f CHARACTERISTICS - ALL TYPES T„ = 25 °C unless otherwise specified

1N5443

Abstract: 1N5448
Contextual Info: K n o x S e m ic o n d u c t o r , I n c . GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N5441 TO 1N5476 TYPE NU M BER CAPACITANCE @ - 4 Vdc • 1 MHz pF TU N IN G RATIO C*2 V / C-30V MIN MAX M IN Q UALITY FACTOR Q @ - 4 Vdc f = 50 M Hz 1N5441 1N5442 6.8 8.2 2.5

in547

Abstract: in5448 IN5446 IN5450 IN5454 IN5461 IN5452 IN5444 IN5475 IN5466
Contextual Info: SÔE D TELEDYNE COMPONENTS ö T lT b O S HIG H Q Q U O tiL iS Ü ì @ • 1N5441 THRU S IL IC O N V A R A C T R O N 1N5476 V O L T A G E -V A R IA B L E C A P A C IT A N C E DIO D ES GEOMETRY 415 JA N A N D JA N -TX VER SIO N AVAILABLE IN5461-76 B A N D C

IN5462

Contextual Info: 3 CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkonkoma, N.Y. 11779 • HIGH Q ~ ÌN5441 THRU 1N5476 S IL IC O N V A R A C T R O N V O L T A G E -V A R IA B L E C A P A C IT A N C E O IO D ES JA N AND JAN -TX V ER S IO N A V A ILA B LE IN5461-76 B AND C • Q @ - 4 V D C , 5 0 M Hz to 6 0 0

minor project proposal on electronics

Abstract: 436 diode MIL-S-19500/436 1N5466B JANTXV diode LN 4001 1N5476B 1N5461B 1N5461C 1N5462C 1N5463C
Contextual Info: MIL SPECS IC | D D D D i a S DQiattt. 4 | MIL-S-19500/436 USAF AMENDMENT 5 9 JANUARY 1984 suPEmunra- AMENDMENT 4 13 July 1972 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-VARIABLE CAPACITOR TYPES 1N5461B THRU 1N5476B AND 1N5461C THRU 1N5476C

1N56B2

Abstract: 1N5439 1N5440 1N5441 1N5442 1N5443 1N5476 1N5681 1N5710
Contextual Info: 5238534 K N O X S E M I C O N D U C T O R INC_ 99D 00137 D ' T -C H - l * f TT D e | S23Û534 000 0137 □ Varactor Diodes 1N5439 to 1N5476 and 1N5681 to 1N5710 Type Number A A A A A A A A A A A A A A A A Capacitance @ - 4Vdc 1 MHz pF Min Quality Factor

Contextual Info: K n o x S e m ic o n d u c t o r , I n c . GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N5441 TO 1N5476 TYPE NUMBER TUNING RATIO C-2 V / C-30V MIN MAX CAPACITANCE @ - 4 Vdc • 1 MHz pF 2.5 2.5 2.6 2.6 MIN QUALITY FACTOR Q @ - 4 Vdc f = 50 MHz 3.1 3.1 450 450

varactor diode 1N5469

Abstract: 1N5441 1N5442 1N5443 1N5444 1N5445 1N5446 1N5447 1N5448 1N5449
Contextual Info: GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N5441 TO 1N5476 PART NUMBER CAPACITANCE @ 4 Vdc • 1 MHz pF 6.8 8.2 10.0 12.0 15.0 18.0 20.0 22.0 27.0 33.0 39.0 47.0 56.0 68.0 82.0 100.0 1N5441 1N5442 1N5443 1N5444 1N5445 1N5446 1N5447 1N5448 1N5449 1N5450 1N5451

Contextual Info: 1N5476 1N5681 1N5710 Varactor Diodes 1N5439 to 1N5476 and 1N5681 to 1N5710 Type Number 1N5439 1N5440 1N5441 1N5442 1N5443 1N5444 1N5445 1N5446 1N5447 1N5448 1N5449 1N5450 1N5451 1N5452 1N5453 1N5454 A A A A A A A A A A A A A A A 1N5455 1N5456 1N5461

1N5449

Contextual Info: K n o x S e m ic o n d u c t o r , I n c GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N5441 TO 1N5476 TYPE NUMBER 1N5441 1N5442 1N5443 1N5444 1N5445 1N5446 1N5447 1N5448 1N5449 1N5450 1N5451 1N5452 1N5453 1N5454 1N5455 1N5456 ♦ 1N5461 ♦ 1N5462 ♦ 1N5463 ♦ 1N5464

1n54j

Abstract: 1N5441 1N5461 1N5476 1n54j9 1N5440 1N5439 1N5442 1N5443 1N5444
Contextual Info: "F ¿7-/9 4TE D ^ooaaTö 00000^3 ö ?t • 1N5439 iseh In tern atio n al i n t e r n a tional Semiconductor, In c - thru semicond 1N5456 1N5461 thru H IG H Q - VOLTAGE VARIABLE CAPACITORS 1N5476 MINIMUM QUALITY TUNING RATIO a t V r = 4 Vdc FACTOR 2 V to 3 0 V

Contextual Info: MSI ELECTRONICS INC 3SE £ E3 5b5bMbb 000036b T E M S I T - 0 7 -/7 - HERMETICALLY SEALED GL AS S PACKAGED TUNING DIODES 08 D S D elect ABRUPT - HYPERABRU PT U E L E C T R IC A L C H A R A C T E R IS T IC S T a = 2 5 ° C unless otherwise noted GENERAL APPLICATIONS

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

MSPD2018

Abstract: MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode
Contextual Info: Aeroflex / Metelics, Inc. Microwave Diodes & Passive Semiconductor Devices Microwave Diodes & Passive Semiconductor Devices Aeroflex / Metelics, Inc. Aeroflex / Metelics, Inc. East Coast Operations 54 Grenier Field Road, Londonderry, NH 03053 Tel: 603 641-3800

A-29 diode

Abstract: Voltage Variable Capacitance Diodes 1N5450A 1N5470A 1N5472A MV1650 N5447A 1N5441A 1N5140 1N5141
Contextual Info: 6367255 MOTOROLA SC P I O D E S /O P T O ÖT 89D 77450 DE |h3t,7SSS □077'4SD fi *T " 0 7 ~ /? General Purpose Abrupt Junction Tuning Diodes Voltage variable capacitance diodes for electronic tuning and control of RF circuits through UHF frequencies. Utilized

1N3182

Abstract: 1N3946 1N4598 T-Cl-19 1N3555 1N4788A 1N4794 1N5470A 1N3552 1N951
Contextual Info: 17 7 5 4 7 0 C O D I SEMICONDUCTOR INC TD 9 0 D 00581 D D eT J 1 7 7 5 4 7 0 QODDSfll 3 |~~ “TX li Ü CODI Semiconductor,3 Inc. iE°EC"lGISTERED VO LTAG E V A R IA B L E JEDEC REGISTERED VOLTAGE VARIABLE CAPACITOR c a p a c it o r s SPECIFICATION LIST TYPE

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

varactor

Abstract: 1N3182 1N5138 1N3947 1N5136 K511 vc299 vc99 MIL-S-19500 1n3945
Contextual Info: Table of Contents ZENER DIODES Page K 1 2 0 -K 5 1 0 K511 - K681 1N4678 - 1N4714 1 N 4 6 1 4 - 1N4627 1N4099 - 1N4121 1N5518 - 1N5546 1N6082 - 1N6091 KZ43A - KZ100A KZ343A - KZ3100A KZ450 - KZ498 CURRENT REGULATOR AND VARACTOR DIODES Page 9 9 9 10 10 11 11

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

varactor 36z

Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r

germanium transistor

Abstract: 2N5121 2N5418 2N5539 2N5637 V2205 MM8006
Contextual Info: INTRODUCTION I I N . . . INDEX Numerical index of ElA-registered device types, w ith major electrical specifications 2N . . . & 3N . . . INDEX Numerical index of ElA-registered device types, with major electrical specifications DEVICE INDEX Complete alpha-numeric index of all device types