1N483B Search Results

Contextual Info: 1N483B THRU 1N486B LOW POWER MINIATURE GLASS PASSIVATED SILICON RECTIFIER Voltage - 70 to 225 Volts Current 200 Milliamperes - FEATURES High temperature metallurgically bonded con­ structed rectifiers 0.2 Ampere oper^ ation at Ta = 25*C with no thermal runaway

1N4868

Abstract: lt 8220 1N483B1 1N4858 1N5194 JAN1N486B N5194 1N483B 1N485B 1N486B
Contextual Info: 1N483B-1N486B 1N51I94-1N5196 «¡erosemi Corp. GENERAL PURPOSE SILICON DIODES FEATURES • • • • Voidless hermetically sealed glass package. Triple layer passivation. Metallurgically bonded. TX types available per MIL-S-19500/118C. ABSOLUTE M A XIM U M RATING S

Contextual Info: 1N483B Small Signal Diode DO-35 Color Band Denotes Cathode Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 80 V IF AV Average Rectified Forward Current 200 mA IFSM Non-repetitive Peak Forward Surge Current

kpbc10

Abstract: diode 1N645 EFR135 DIODE 1N649 gp20 diode JTX1N4942 SMD zener diode 203 rectifier diode GP20 RGP10E D041
Contextual Info: 6ENL INSTR/ POüJER 2SE D • 7^9/~éC> 30^0137 G G Q 3 3 m T ■ Standard Silicon Rectifiers t II A PKG TYPE 0.2 0.4 D0204MB D0204MB 0041 n Îl II 0.5 0.5 0.8 1.0 MINI M ELF GL-34 MINI M ELF GL-34 D041 MPG06 I I I VRRM (volts) 50 1N483B GL34A BYM05-50 GP08A

RG3G

Abstract: D0204AP 1N647 RG3A D0-204AP 1N5559
Contextual Info: QUICK GUIDE TO GLASS PASSIVATED RECTIFIERS TYPE 1N483B thru 1N486B 1N645 thru 1N649 1N4245 thru 1N4249 1N4942* thru 1N4948' 1N5059 thru 1N5062 1N5614 thru 1N5622 CASE D0204MB DO204MB D0204AP D0204AP D0204AP D0204AP le A 02 04 1.0 10 1.0 1.0 1.0 1.0 1.0 I» (A)

fdh900

Abstract: BA217 BA216 FD777 1N4151 1N4152 1N4153 1N4154 1N4305 1N4376
Contextual Info: FAIRCHILD DIODES DIODES COMPUTER DIODES BY ASCENDING trr GLASS PACKAGE DEVICE NO. trr ns Max BV V Min 1 FD700 0.70 30 2 1N4376 0.75 20 3 BAY82 0.75 15 100 12 1.0 4 FD777 0.75 15 100 8.0 1.0 5 1N5282 2.0 80 100 55 1.3 Item Vr V Vf V Max 50 20 1.1 100 10 1.1

1N4548

Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
Contextual Info: Discrete POWER & Signal Technologies Diode Cross-Reference Guide Industry Part Number 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N114 1N115 1N116 1N116A 1N117 1N1170 1N117A 1N118 1N118A 1N119 1N120 1N126 1N126A 1N127 1N127A 1N128 1N128A

1N456

Abstract: 1N456A 1N457 1N457A 1N458 1N458A 1N459 1N459A Scans-0016000
Contextual Info: Diode Data NATL SEMICOND DISCRETE HE D [ faSQliaO 0037GQ1 7 | Low Leakage Diodes Glass Package Device No. 1N456 Package No. DO-35 VRRM V Min •r nA Max 30 25 Vr V If mA C PF Max 1.0 40 10 VF v Min 25 ® Max 1N456A DO-35 30 25 25 1.0 100 1N457 DO-35 70

JAN1N486B

Contextual Info: Microsemi Corp. yfm f* in e a iode expert?. SANTA ANA, CA F o r m o re in fo rm a tio n call: 7 1 4 979-K220 FE A TU R E S 1 N 4 8 3 B thru 1 N 4 8 6 B and 1 N 5 19 4 thru 1 N 5 19 6 GENERAL PURPOSE SILICON DIODES • V o id le s s h e rm e tic a lly s e a le d g la s s p a c k a g e (00-35).

IN5240

Abstract: in5239 in5242 in5228 1N4868 1N5108 1N5110 IN5108 IN5226 JAN1N486B
Contextual Info: Zener Voltage at I zt Volts @ mA Zener Type No. Max. Zener Impedance @ I zt Ohms Zener Voltage Tolerance 1N5102 1N5103 1N5104 180.0 190.0 200.0 4.0 850.0 900.0 950.0 ±5% 1N5105 1N 5106 1N5107 220.0 240.0 260.0 3.0 1100.0 1300.0 1500.0 ±5% 1N5108 1N5109 1N5110

IN3599

Abstract: 1N9168 1N4242 IN485 IN625 1N20S 1N4389 1N4243 in648 IN458a
Contextual Info: jomltron « • - _ SemitronicsCorp. ■ SS 481.1541= DD0DB05 3 ■ H iç rrp tp sem ico nd u c to r s IN T E X / SEMITRONICS CORP S7E D _ , , , / / / silicon diodes Reverse Current «A)150°C (See Notes) 5.0 SO 56 50 50 6.5 2.0 1.0 2.0 2.0 15 1.5

1N484

Abstract: 1N466A D0-35 1N462 1N458 1N4838 1N456 1N457 1N458A 1N461
Contextual Info: TT 2514DU QDDD3S2 D '|~ 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC i 99D 0 0 3 5 2 D -f à>ï-°7 SILICON DIODES Typa Case Min. Forward P X V . Currant V olts at I V mA Ravarsa Currant a t2 5 * t Pa ­ Maximum vana Ravarsa V olt- Currant at Tamp.

1N4848

Abstract: 1N4868 1N4828 1N484 1N4858 1N456 1N456A 1N457A 1N458 1N458A
Contextual Info: Diode Data NATL SEMICOND DISCRETE H E D [ f c , 5 ai l 3D GQ37QQ1 7 Low Leakage Diodes Glass Package If mA C PF Max Proc No. 1.0 40 10 D2 1.0 100 VF V VRRM V Min •r nA Max DO-35 30 25 25 1N4S6A DO-35 30 25 25 1N457 DO-35 70 25 60 1.0 20 1N457A DO-35 70

N1702

Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
Contextual Info: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961

st178

Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment

1N1743

Abstract: IN5234 IN5008 1N4202 zener diode 1N PH 48 diode 1n1418 1NS232 zener diode c51 ph 1n587 1N4465
Contextual Info: ZENER DIODE/RECTIFIER CROSS REFERENCE CHART Containing all JE D E C registered Zener diodes. This popular reference chart contains highlight information on all JE D E C registered Zener diode and rectifier types as well as Microsemi types. The following Codes are used:

1n813 fairchild

Abstract: 2N3303 abb inverter manual acs 800 FD6666 diode 2N3137 UA703 equivalent FD200 diode 2N2369 AVALANCHE PULSE GENERATOR UA716 Fairchild dtl catalog
Contextual Info: Fairchild Semiconductor Dab Cataloi 196! The Fairchild Semiconductor Data Cataloc — an all-inclusive volume of product infor mation covering diodes, transistors, digita and linear integrated circuits, MSI and LS devices from the world's largest suppliei

1N6122A JANTX

Abstract: 1N6121 1N6116A JANTX JANTX1N5626 JANTX 1N4246 JANTX 1N5811 JAN 1N5811 1N5416 JANTX JANTX 1N647-1 "general instrument 1n4946
Contextual Info: GENERAL INSTRUMENT # 1 IN PRICE, # 1 IN SERVICE, # 1 IN MILITARY General Instrument Power Semiconductor Division , is the world’s largest manufacturer of rectifiers and bridges, supplying over 2 billion annually. We’re proud to be number one in quality and reliability as we are

N5194

Abstract: 1N483B 1N485B JAN1N486B N5195 1N486B 1N5194 1N5195 1N5196 D035
Contextual Info: M¡erosemi Corp. f* The óiocie experta ym \ SANTA ANA, CA F o r m o r e in f o r m a ti o n call: 1 N 4 8 3 B thru 1 N 4 8 6 B and 1 N 5 19 4 thru 1N 519 6 714 979-K220 GENERAL PURPOSE SILICON DIODES FE A T U R E S • V o id le s s h e rm e tic a lly s e a le d g la s s p a c k a g e (00-35).

TXD10K40

Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Contextual Info: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: INCH-POUND MIL-PRF-19500/118H 19 July 2007 SUPERSEDING MIL-PRF-19500/118G 22 June 2006 The documentation and process conversion measures necessary to comply with this revision shall be completed by 19 October 2007. PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON,

IN3599

Abstract: IN433A IN625 1N3068 1N218 1N4147 IN648 1N3069 1N3067 IN485
Contextual Info: « • - _ j o m lt r o n SemitronicsCorp. ■ 481.1541= DD0DB05 3 ■ H iç rrp tp S S sem ico nd u c to r s IN T E X / SEMITRONICS CORP S7E D _ , , , / / / - <DI V t silicon diodes Reverse Current «A)150°C (See Notes) 5.0 SO 56 50 50 6.5 2.0