150V Search Results

2N5401

Contextual Info: i TOSHIBA TRANSISTOR 2N5401 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE HIGH VOLTAGE AMPLIFIER APPLICATIONS. . High Collector Breakdown Voltage : VC b o =-160V, VCe o = -150V . Low Leakage Current : ICB0=5-50nA(Max. ) @ V c b = - 120V

2sd845

Abstract: 2SB755 2SB75 BASE15-0
Contextual Info: Inchange Semiconductor Product Specification 2SD845 Silicon NPN Power Transistors ・ DESCRIPTION ・With MT-200 package ・Complement to type 2SB755 ・High transition frequency ・High breakdown voltage :VCEO=150V min APPLICATIONS ・For power amplifier applications

055PF

Abstract: 600B MSK600 MSK600B
Contextual Info: ISO 9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 600 WIDE BANDWIDTH HIGH VOLTAGE AMPLIFIER 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 QUALIFIED FEATURES: Ultra Low Quiescent Current - ±15mA for High Voltage 150V Peak to Peak Output Voltage Swing

AUDIO MOSFET POWER AMPLIFIER SCHEMATIC

Abstract: AUDIO MOSFET POWER AMPLIFIER SCHEMATIC schematic diagram MSK154 MSK154B
Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 154 HIGH POWER DUAL OPERATIONAL AMPLIFIER 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: MIL-PRF-38534 QUALIFIED Space Efficient Dual Power Amplifier Low Cost High Voltage Operation: 150V Low Quiescent Current: 50mA Typ. Total

20n15gh

Abstract: ap20N15gh 20n15g AP20N15 TO252 rthjc TO-252 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET to-252
Contextual Info: AP20N15GH RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower Gate Charge ▼ Fast Switching Characteristic BVDSS 150V RDS ON 100mΩ ID G 20A S Description G Advanced Power MOSFETs from APEC provide the

Contextual Info: Schottky Barrier Diode Twin Diode OUTLINE Package I FTO-220G S G 20T C 1 5 M Unit : mm Weight J.54g Typ 150V 20A 4.5 Feature • Tj=i5(rc • Tj=150°C • High lo Rating • 7 / iæ - ju ^ • I r =30^A • Full Molded • *& « £ « & : u c < u • Resistance fo r thermal run-away

Contextual Info: FDC2512 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

Contextual Info: OPA354 OPA2354 OPA4354 SBOS233E − MARCH 2002− REVISED MAY 2009 250MHz, Rail-to-Rail I/O, CMOS OPERATIONAL AMPLIFIERS FEATURES D D D D D D D D D D D D DESCRIPTION UNITY-GAIN BANDWIDTH: 250MHz WIDE BANDWIDTH: 100MHz GBW HIGH SLEW RATE: 150V/µs LOW NOISE: 6.5nV/√Hz

Contextual Info: REV ECN - NOTES: APPD 4785 L = .1 5 0 X POSITIONS 1N .13 8 [ 3 . 5 m m ] PITCH DIMENSIONS INDICATED IN x PARENTHESES. ESBMXX10 0 SU RATINGS CURRENT - 12A VOLTAGE - 300V NUMBER OF POSITIONS .055 \J U.L. FILE NO. A RATINGS CURRENT - 12A VOLTAGE - 150V PITCH:

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD. PZT5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR „ FEATURES * High Collector-Emitter Voltage: VCEO=-150V * High current gain „ APPLICATIONS * Telephone Switching Circuit * Amplifier „ ORDERING INFORMATION

Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 154 HIGH POWER DUAL OPERATIONAL AMPLIFIER 8170 Thompson Road Cicero, N.Y. 13039 315 699-9201 FEATURES: MIL-PRF-38534 QUALIFIED Space Efficient Dual Power Amplifier Low Cost High Voltage Operation: 150V Low Quiescent Current: 50mA Typ. Total

Contextual Info: SBR10150 VOLTAGE 150V 10 .0AMP Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-220 FEATURES .412 10.5 MAX. * Low forward voltage drop * High current capability * High reliability

Contextual Info: UTC 2N5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =625mW *High current gain 1 APPLICATIONS *Telephone Switching Circuit *Amplifier TO-92 1:EMITTER 2:BASE

Contextual Info: Technical Specification RQ72xxxHPXxx Rail Grade DC-DC Power Supply 150V 5.0-24V 255W Continuous Input Transient Input Outputs Max Power 3000Vdc REINFORCED Insulation Half-brick DC-DC Converter a pu d bl va ic n at ce io d n 42-110V The RailQor half-brick converter series is composed of nextgeneration, board-mountable, isolated REINFORCED , fixed

Contextual Info: Product data sheet Characteristics 9070T150D23 TRANSFORMER CONTROL 150VA 120/240V-24V Commercial Status Commercialised Product or component type Industrial Control Transformer Product certifications CE CSA UL listed NEMA degree of protection Not rated open device

ATARx9x

Abstract: ATMEL 431 ATA8401
Contextual Info: Atmel ATA8401 UHF ASK/FSK Industrial Transmitter DATASHEET Features ● Integrated PLL loop filter ● ESD protection 3kV HBM/150V MM ● High output power (8.0dBm) with low supply current (9.0mA) ● Modulation scheme ASK/FSK ● FSK modulation is achieved by connecting an additional capacitor between the

U2T405

Abstract: t605 U2T305
Contextual Info: U2T301 U2T305 POWER DARLINGTONS U2T401 U2T405 5 Amp, 150V, Planar NPN FEATURES DESCRIPTION • • • • • Unitrode NPN Darlingtons consist of a two transistor circuit on a single monolithic planar chip. High Current Gain: 1000 min. @ lc = 2A Low Saturation Voltage: as low as 1.5V max. @ lc = 2A

BUV27AF

Abstract: BUV27F
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUV27F/AF DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 120V(Min)- BUV27F 150V(Min)- BUV27AF ·High Switching Speed APPLICATIONS ·Designed for fast switching applications such as high

2SC783

Abstract: 2sa483 2SA48
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA483 DESCRIPTION •High Collector Current: IC= -1.5A ·Collector-Emitter Breakdown Voltage : V BR CEO= -150V(Min) ·Complement to Type 2SC783 APPLICATIONS ·Power amplifier applications

2SC1450

Abstract: 2SA766
Contextual Info: Inchange Semiconductor Product Specification 2SC1450 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Wide area of safe operation ·High collector-emitter breakdown voltage :VCEO=150V min ·Complement to type 2SA766 APPLICATIONS ·For power amplifier and vertical output

OPA2354

Abstract: OPA354 OPA354AIDDA OPA354AIDDAR OPA4354 OABI OPA2354AIDDA
Contextual Info: OPA354 OPA2354 OPA4354 SBOS233E − MARCH 2002− REVISED MAY 2009 250MHz, Rail-to-Rail I/O, CMOS OPERATIONAL AMPLIFIERS FEATURES D D D D D D D D D D D D DESCRIPTION UNITY-GAIN BANDWIDTH: 250MHz WIDE BANDWIDTH: 100MHz GBW HIGH SLEW RATE: 150V/µs LOW NOISE: 6.5nV/√Hz

IXFK240N15T2

Abstract: IXFX240N15T2 PLUS247
Contextual Info: Advance Technical Information IXFK240N15T2 IXFX240N15T2 GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 = = 150V 240A Ω 5.2mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions

Contextual Info: FDB075N15A_F085 N-Channel Power Trench MOSFET 150V, 110A, 7.5mΩ D D Features „ Typ rDS on = 5.5mΩ at VGS = 10V, ID = 80A „ Typ Qg(tot) = 80nC at VGS = 10V, ID = 80A G „ UIS Capability „ RoHS Compliant G „ Qualified to AEC Q101 TO-263 FDB SERIES Applications

12103C106KAT

Contextual Info: LTC3639 High Efficiency, 150V 100mA Synchronous Step-Down Regulator FEATURES n n n n n n n n n n n n n n Wide Operating Input Voltage Range: 4V to 150V Synchronous Operation for Highest Efficiency Internal High Side and Low Side Power MOSFETs No Compensation Required