U2T405
Abstract: t605 U2T305
Contextual Info: U2T301 U2T305 POWER DARLINGTONS U2T401 U2T405 5 Amp, 150V, Planar NPN FEATURES DESCRIPTION • • • • • Unitrode NPN Darlingtons consist of a two transistor circuit on a single monolithic planar chip. High Current Gain: 1000 min. @ lc = 2A Low Saturation Voltage: as low as 1.5V max. @ lc = 2A
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UZT301
Abstract: U2T405 U2T305 R82E U2t301 U2T401 60V transistor npn 2a
Contextual Info: U2T301 U2T305 POWER DARLINGTONS U2T401 U2T405 5 Amp, 150V, Planar NPN o FEATURES • • • • • High Current Gain: 1000 min. @ lc = 2A Low Saturation Voltage: as low as 1.5V max. @ lc = 2A High Voltage: up to 150V min. VCER Monolithic Design Incorporating Multiple-Emitter Techniques
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u2t301u2t401u2t305u2t405+3uzt301r82e60v transistor npn 2a
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q404 transistor
Abstract: D012S Q4-04 transistor 2A 6v
Contextual Info: MICROSENI CORP/ UATERTOIilN 5QE » ^347^3 D012S05 U2T301 U2T305 POWER DARLINGTONS ITT « U N I T Ü2T40Ï U2T405 5 Amp, 150V, Planar NPN / FEATURES • High Current Gain: 1000 min. @ lc = 2A • Low Saturation Voltage: as low as 1.5V max. @ lc = 2A • High Voltage: up to 150V min. VCER
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d012s05u2t301u2t305u2t405+7u2t40su2t401926-q404q404 transistord012sq4-04transistor 2a 6v
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UFN540
Abstract: UFN833 UPT613 UFNF130 UFN451 U2T105 U2T305 TQ-66 ufn432 UFN450
Contextual Info: N-CHANNEL POWER MOSFETS Vm ft»* «» Dram On-State Source •Resist ance Voltage Volts (Shuns) PRODUCT SELECTION GUIDE Is Continuous Drain Current :. . 1°« . Pulsed: . ÉwMiv Current Part ■ ‘lifcrtr: Numbers j : Càsja; (Amps) : Vos Drain. On-State
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u2ta506u2ta508u2ta510861-6s40+10ufn540ufn833upt613ufnf130ufn451u2t105u2t305tq-66ufn432ufn450
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triacs bt 804 600v
Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
Contextual Info: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa tion for maintaining an unusually high level of quality, perfor
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comp27-1296triacs bt 804 600vur7201n4465+7ao110diode 1n5392n3750unitrode discrete databook2n6138cm104unitrode 679 bridge rectifier
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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B0677A
Abstract: B0677 a B0331 BOW53A b0263 75G60 2S01275 MJ4000
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO Ie Max PD Max (V) (A) (W) hFE Min Max fT leBO Max (Hz) (A) tr Max (8) tf Max (8) Toper Max ee) Package Style NPN Darlington Transistors, (Cont'd) 5 10 15 20 2S01164Z 2S01164Z SON301 U2T301
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2s01164zson301u2t301son401+10u2t4012s01764b0677ab0677 ab0331bow53ab026375g602s01275mj4000
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MIL-S-19500
Abstract: U2T305 U2T10 2N5157 JANTX U2T205 2N1016D UPT311 U2T713 2N1050A JAN UNITRODE TRANSISTORS
Contextual Info: SUMMARY LIST OF API/SPC Q.P.L. DIRECTORY TYPES QUALIFICATION COMPLETE 2N5660-JAN,JAN-TX,JAN-TXV 2N5661-JAN,JAN-TX,JAN-TXV MIL-S-19500/454 MIL-S-19500/454 2N5662-JAN,JAN-TX,JAN-TXV MIL-S-19500/454 2N5653-JAN,JAN-TX,JAN-TXV MIL-S-19500/454 2N1016B-JAN 2N1016C-JAN
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2n5660-jan2n5661-jan2n5662-jan2n5653-jan+162n1016b-jan2n1016c-jan2n1016d-jan2n1483-jan2n1484-jan2n1485-janmil-s-19500u2t305u2t102n5157 jantxu2t2052n1016dupt311u2t7132n1050a janunitrode transistors
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