U2T405
Abstract: t605 U2T305
Contextual Info: U2T301 U2T305 POWER DARLINGTONS U2T401 U2T405 5 Amp, 150V, Planar NPN FEATURES DESCRIPTION • • • • • Unitrode NPN Darlingtons consist of a two transistor circuit on a single monolithic planar chip. High Current Gain: 1000 min. @ lc = 2A Low Saturation Voltage: as low as 1.5V max. @ lc = 2A
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u2t301u2t305u2t401u2t405+1t605
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q404 transistor
Abstract: D012S Q4-04 transistor 2A 6v
Contextual Info: MICROSENI CORP/ UATERTOIilN 5QE » ^347^3 D012S05 U2T301 U2T305 POWER DARLINGTONS ITT « U N I T Ü2T40Ï U2T405 5 Amp, 150V, Planar NPN / FEATURES • High Current Gain: 1000 min. @ lc = 2A • Low Saturation Voltage: as low as 1.5V max. @ lc = 2A • High Voltage: up to 150V min. VCER
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d012s05u2t301u2t305u2t405+7u2t40su2t401926-q404q404 transistord012sq4-04transistor 2a 6v
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UZT301
Abstract: U2T405 U2T305 R82E U2t301 U2T401 60V transistor npn 2a
Contextual Info: U2T301 U2T305 POWER DARLINGTONS U2T401 U2T405 5 Amp, 150V, Planar NPN o FEATURES • • • • • High Current Gain: 1000 min. @ lc = 2A Low Saturation Voltage: as low as 1.5V max. @ lc = 2A High Voltage: up to 150V min. VCER Monolithic Design Incorporating Multiple-Emitter Techniques
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u2t301u2t401u2t305u2t405+3uzt301r82e60v transistor npn 2a
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UFN540
Abstract: UFN833 UPT613 UFNF130 UFN451 U2T105 U2T305 TQ-66 ufn432 UFN450
Contextual Info: N-CHANNEL POWER MOSFETS Vm ft»* «» Dram On-State Source •Resist ance Voltage Volts (Shuns) PRODUCT SELECTION GUIDE Is Continuous Drain Current :. . 1°« . Pulsed: . ÉwMiv Current Part ■ ‘lifcrtr: Numbers j : Càsja; (Amps) : Vos Drain. On-State
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u2ta506u2ta508u2ta510861-6s40+10ufn540ufn833upt613ufnf130ufn451u2t105u2t305tq-66ufn432ufn450
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triacs bt 804 600v
Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
Contextual Info: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa tion for maintaining an unusually high level of quality, perfor
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comp27-1296triacs bt 804 600vur7201n4465+7ao110diode 1n5392n3750unitrode discrete databook2n6138cm104unitrode 679 bridge rectifier
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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