600B Search Results

BTA12 Application note

Abstract: "BTA12" Application note bta12 600 triac circuit diagram for application BTA12 snubber bta12 bta12 application BTA12-600 BTA12-600BW3G BTA12-800BW3G BTA12600B
Contextual Info: BTA12-600BW3G, BTA12-800BW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full−wave ac control applications where high noise immunity and high commutating di/dt are required. http://onsemi.com Features • • • • • • •

Contextual Info: LITE-ON SEMICONDUCTOR S12M8-600B SCRs 12 AMPERES RMS 600 VOLTS Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors TO-220AB FEATURES Blocking Voltage to 600 Volts High Surge Current Capability - 100 Amperes On-State Current Rating of 12 Amperes RMS at 80℃

Contextual Info: LITE-ON SEMICONDUCTOR T12M50T-600B TRIACS 12 AMPERES RMS 600 VOLTS Triacs Sillicon Bidirectional Thyristors TO-220AB FEATURES Blocking Voltage to 600 Volts On-state Current Rating of 12 Amperes RMS at 90℃ Uniform Gate Trigger Currents in Three Quadrants

Contextual Info: LITE-ON SEMICONDUCTOR S12M8-600B SCRs 12 AMPERES RMS 600 VOLTS Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors TO-220AB FEATURES Blocking Voltage to 600 Volts High Surge Current Capability - 100 Amperes On-State Current Rating of 12 Amperes RMS at 80℃

Contextual Info: LITE-ON SEMICONDUCTOR T8M10F-600B TRIACS 8 AMPERES RMS 600 VOLTS Sensitive Gate Triacs Sillicon Bidirectional Thyristors TO-220AB FEATURES Sensitive Gate Triggering in 3 Modes for AC Triggering on Sinking Current Sources Four Mode Triggering for Drive Circuits that Source

BUK427-600B

Abstract: 18-SO BUK427-600 d0411
Contextual Info: 7 ^ 3 9 - / / Philips C om ponents Data sheet status Product specification date of issue March 1991 PHILIPS BUK427-600B PowerMOS transistor INTERNATION GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope.

BTA316

Abstract: BTA316-600B
Contextual Info: BTA316-600B 3Q Hi-Com Triac Rev. 02 — 23 November 2010 Product data sheet 1. Product profile 1.1 General description Planar passivated high commutation three quadrant triac in a SOT78 plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur.

T8M10F-600B

Abstract: TJ-108
Contextual Info: LITE-ON SEMICONDUCTOR T8M10F-600B TRIACS 8 AMPERES RMS 600 VOLTS Sensitive Gate Triacs Sillicon Bidirectional Thyristors TO-220AB FEATURES Sensitive Gate Triggering in 3 Modes for AC Triggering on Sinking Current Sources Four Mode Triggering for Drive Circuits that Source

Td16_600b

Contextual Info: D2 PA K BTA312B-600B 3Q Hi-Com Triac 25 July 2014 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT404 D2PAK surface mountable plastic package intended for use in circuits where high static and dynamic dV/

Contextual Info: TO -2 20A B BTA416Y-600B 3Q Hi-Com Triac 10 June 2014 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT78D TO-220AB internally insulated plastic package intended for use in circuits where high static and

Contextual Info: TO -2 20A B BTA316-600BT 3Q Hi-Com Triac 5 August 2014 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT78 plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur.

Contextual Info: SO T2 23 BTA204W-600B 3Q Hi-Com Triac 15 August 2014 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT223 surface mountable plastic package intended for use in circuits where high static and dynamic dV/dt and

Contextual Info: TO -2 20F BTA312X-600B 3Q Hi-Com Triac 28 May 2014 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT186A TO-220F "full pack" plastic package intended for use in circuits where high static and dynamic dV/dt

Contextual Info: TO -2 20A B BTA225-600B 3Q Hi-Com Triac 6 August 2014 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT78 TO-220AB plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt

triac BT 140

Abstract: triac BT 16 rating triac BT 06 400 triac BT 24 triac BT 12 rating BTA316 BTA316-600BT BT triac BT 140 triac
Contextual Info: BTA316-600BT 3Q Hi-Com Triac Rev. 02 — 30 November 2010 Product data sheet 1. Product profile 1.1 General description Planar passivated high commutation three quadrant triac in a SOT78 plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur.

Contextual Info: TS1220-600B SENSITIVE SCR FEATURES • It r m s = 12A ■ V drm /V rrm = 6 0 0 V < 200(i,A ■ HIGH It s m = 110A (tp = 10ms) ■ Ig t K DESCRIPTION The TS1220-600B is using a high performance TOPGLASS PNPN technology and is intended for applications requiring high surge capability (like

BTA06-600B MAR

Abstract: BTA06-600B BTA06 application circuit THYRISTOR MAR 615 BTA06-600B equivalent bta06-600
Contextual Info: Preliminary BTA06-600B SemiWell Semiconductor UL : E228720 Bi-Directional Triode Thyristor Symbol ○ Features 2.T2 ▼▲ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current IT(RMS = 6 A ) ◆ High Commutation dv/dt ◆ Isolation Voltage ( VISO = 1500V AC )

Contextual Info: N AMER PHILIPS/DISCRETE D bb53R31 0030540 TOO • APX Product Specification Philips Semiconductors BUK444-600B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic full-pack envelope, he device is intended for use in

BUK657-600A

Abstract: BUK657-600C 600B BUK657 BUK657-600B T0220AB buk657-600 Y485
Contextual Info: N AMER P H I L I P S / D I S C R E T E 2SE D • 1^53=131 G O S O T I S 1 ■ PowerMOS transistor Fast Recovery Diode FET BUK657-600A BUK657-600B BUK657-600C •1- _ o a ~ j 5 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-eifect power transistor in a

11.0592mhz crystal oscillator

Abstract: EN50065-1 1042U PLCC28 ST7536 ST7536CFN 712-12 7492 pin out diagram
Contextual Info: Æ 7 SG S-THO M SO N ST7536 POWER LINE MODEM } • HALF DUPLEX SYNCHRONOUS FSK MODEM • Two programmable channels for 600bps data rate • Two programmable channels for 1200bps data rate ■ AUTOMATICALLY TUNED Rx AND Tx FILTERS ■ TX CARRIER FREQUENCIES SYNTHESIZED

BUK437-600B

Abstract: ATIC BUK437-600A
Contextual Info: N AMER PHILIPS/DISCRETE 25E D • bbS3T31 0020325 7 ■ PowerMOS transistor " BUK437-600A BUK437-600B T - 3 e? - 1S’ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

BUK454-600B

Abstract: T0220AB t 326 Transistor
Contextual Info: N AMER P H I L I P S / D I S C R E T E b^E D • □□3Dfc>3D TM2 ■ I APX b ¡35 3^31 Product Specification Philips Semiconductors BUK454-600B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope.

BV 50

Contextual Info: BTA312X-600B 3Q Hi-Com Triac 5 October 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated high commutation three quadrant triac in a SOT186A TO-220F "full pack" plastic package intended for use in circuits where high static and dynamic dV/dt

Contextual Info: BTA312B-600B 3Q Hi-Com Triac 4 October 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated high commutation three quadrant triac in a SOT404 D2PAK surface mountable plastic package intended for use in circuits where high static and dynamic dV/