12N10 Search Results

12N100A

Abstract: 12n100 IXGH12N100 IXGH12N100A
Contextual Info: Low VCE sat IGBT High Speed IGBT Symbol Test Conditions VCES IXGH 12N100 IXGH 12N100A Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C

10N100

Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 12N100Q ISOPLUS247TM Q CLASS VDSS ID25 1000 V 10 A IXFR 10N100Q 1000 V 9A Electrically Isolated Back Surface trr £ 200 ns RDS(on) 1.05 W 1.20 W N-Channel Enhancement Mode Avalanche Rated, High dV/dt

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N10 Power MOSFET 12A, 100V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N10 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with minimum on-state resistance for extremely high dense cell design, rugged

Contextual Info: □IXYS Advanced Technical Information HiPerFET Power MOSFETs ISOPLUS247™ Q CLASS ix f r DSS D 25 10 A 12N100Q 1000 V IXFR 10N100Q 1000 V 9A Electrically Isolated Back Surface t rr < 200 ns D S (on) 1.05 Q 1.20 Q N-Channel Enhancement Mode Avalanche Rated, HighdV/dt

Contextual Info: HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM Q CLASS VDSS ID25 RDS on 12N100Q 1000 V 10 A IXFR 10N100Q 1000 V 9A (Electrically Isolated Back Surface) trr ≤ 300 µs 1.1 Ω 1.20 Ω N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances

Contextual Info: Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack Symbol Test Conditions VCES IXGH 12N100U1 IXGH 12N100AU1 Maximum Ratings VCES TJ = 25°C to 150°C 1000 V TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30

7N60B

Abstract: 65A3 40N60A 60N60 IXGA 12N60C 200n60 ixgh 1500 30N30 IXG IGBT ixgh
Contextual Info: Insulated Gate Bipolar Transistors IGBT G series (high gain, high speed) v CE{Mt) Type T „ = 25°C A = 150°C New t jm > > IXGH 28N30 > 56 60 60_ IXGH 30N30 > IXGH 4QN30 > IXGH 31N60 IXGH IXGH IXGH > IXGN IXGN > IX G A 12N100 IXGH 12N100 IXGP 12N100 28

D1488

Abstract: D2523 12n100q mss1000 ld12a
Contextual Info: EIIXYS HiPerFET Power MOSFETs Q Class IXFH 12N100Q IXFT 12N100Q N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt V DSS ^D25 R DS on = 1000 V = 12 A = 1.05 Q trr < 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings V DSS Td = 25°C to 150°C

1000 volt mosfet

Abstract: SHD225613 SHD2258
Contextual Info: SENSITRON SEMICONDUCTOR SHD225613 TECHNICAL DATA DATA SHEET 196, REV. A Formerly Part Number SHD2258 HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 1000 Volt, 1.05 Ohm, 12A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Equivalent to 12N100 Series

12n100q

Contextual Info: HiPerFETTM Power MOSFETs Q Class IXFH 12N100Q IXFT 12N100Q VDSS ID25 RDS on = 1000 V = 12 A = 1.05 W trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt Preliminary data sheet Symbol Test Conditions Maximum Ratings V DSS TJ = 25°C to 150°C

IXFH12N100Q

Abstract: 10N100 6a diode 12N100Q IXFR12N100
Contextual Info: HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM Q CLASS VDSS ID25 RDS on 12N100Q 1000 V 10 A IXFR 10N100Q 1000 V 9A (Electrically Isolated Back Surface) trr ≤ 300 µs 1.1 Ω 1.20 Ω N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances

12N10

Abstract: Mosfet 12N10L 12N10L
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N10 Power MOSFET 12A, 100V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N10 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with minimum on-state resistance for extremely high dense cell

12N100

Contextual Info: IGBT with Diode Low VCE sat High speed IXGA/12N100U1 IXGA / IX G P 12N100AU1 Symbol Test Conditions V CES T j = 25°C to 150°C 1000 V v CGR T J, = 25°C to 150°C; Rrc = 1 MQ Gfc 1000 V v GES Continuous ±20 V VGEM Transient ±30 V Tc = 25°C 24 A Tc = 90°C

ixgh 1500

Abstract: 40N60A 25N120 200n60 60n60 igbt smd 30n60 10N60A 30N60A .25N100 20n60a
Contextual Info: Insulated Gate Bipolar Transistors IGBT G series with high gain V•CSS : ■■ Type . TJm = 15° CC > New ► IXGA IXGH IXGH IXGH IXGH IXGH IXGH IXGH 10N60 10N60 20N60 31N60 30N60 38N60 40N60 60N60 IXGH 10N100 >■ IXGA 12N100 > IXGH 12N100 > ► >•

Contextual Info: □ I X Y S Low VrP, IGBT with Diode CE sat High Speed IGBT with Diode Combi Pack v CES IXGH 12N100U1 IXGH 12N100AU1 ^C25 V CE(sat) 1000 V 24 A 3.5 V 1000 V 24 A 4.0 V TO-247 SMD (Note 1) Maximum Ratings Symbol Test Conditions V v CES V CGR Td = 25°C to 150°C

shd2258

Contextual Info: SENSITRON SEMICONDUCTOR SHD225613 TECHNICAL DATA DATA SHEET 196, REV. A Formerly Part Number SHD2258 HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 1000 Volt, 1.05 Ohm, 12A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Equivalent to 12N100 Series

IXYS DS 145 12A

Abstract: IXYS DS 145 LTS 543
Contextual Info: nixYs HiPerFET Power MOSFETs Q Class IXFH 12N100Q IX F T 12N100Q DSS D25 P DS on = 1000 V 12 A = 1.05 Q trr < 200 ns N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt Preliminary data sheet TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings

12N100Q

Contextual Info: HiPerFETTM Power MOSFETs Q Class IXFH 12N100Q IXFT 12N100Q VDSS ID25 RDS on = 1000 V = 12 A = 1.05 W trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

Contextual Info: □IXYS IXFH 10N100 IXFH 12N100 HiPerFET Power MOSFETs IXFH/FM 10N 100 IXFH/FM 12N100 IXFM 10N100 IXFM 12N100 ^DSS 1000 V 1000 V ^D25 10 A 12 A D DS on 1.20 a 1.05 a K 250 ns 250 ns N-Channel Enhancement Mode High dv/dt, Low t , HDMOS™ Family Symbol

12N100L

Abstract: IXTH12N100L
Contextual Info: Power MOSFETs for Linear Operation IXTH 12N100L VDSS = 1000 V = 12 A ID25 RDS on = 1.3 Ω N-Channel Enhancement Mode Avalanche Rated Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

IXGH12N100AU1

Abstract: IXGH12N100U1
Contextual Info: Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack Symbol Test Conditions VCES IXGH 12N100U1 IXGH 12N100AU1 Maximum Ratings VCES TJ = 25°C to 150°C 1000 V TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30

12N100F

Contextual Info: HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching IXFH 12N100F VDSS IXFT 12N100F ID25 RDS on = 1000 V = 12 A = 1.05 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Preliminary Data Sheet TO-247 AD (IXFH)

10N100F

Abstract: 10n100 98934
Contextual Info: VDSS HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM ID25 RDS on 12N100F 1000 V 10 A IXFR 10N100F 1000 V 9A F-Class: MegaHertz Switching trr ≤ 250 ns (Electrically Isolated Back Surface) 1.05 Ω 1.20 Ω N-Channel Enhancement Mode Avalanche Rated, High dV/dt

Contextual Info: MegaMOSTMFET IXTH / IXTM 10N100 IXTH / IXTM 12N100 VDSS ID25 RDS on 1000 V 1000 V 10 A 12 A 1.20 Ω 1.05 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V