10VX1 Search Results

2SB1299

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1299 Silicon PNP epitaxial planar type For power amplification 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)

Contextual Info: Power Transistors 2SB1317 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1975 Unit: mm 2.0 2.7±0.3 3.0±0.3 1.0±0.2 0.6±0.2 5.45±0.3 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −180

Contextual Info: Power Transistors 2SB1054 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SD1485 5.0±0.2 φ 3.2±0.1 15.0±0.2 • Excellent current IC characteristics of forward current transfer ratio hFE vs. collector • Wide area of safe operation ASO

Contextual Info: Power Transistors 2SB1254 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD1894 5.0±0.2 3.2 11.0±0.2 φ 3.2±0.1 15.0±0.2 (3.5) Solder Dip • Optimum for 60 W HiFi output • High forward current transfer ratio hFE

2sc3979

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC3979, 2SC3979A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage

Contextual Info: Power Transistors 2SB1255 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD1895 5.0±0.2 3.2 11.0±0.2 φ 3.2±0.1 15.0±0.2 (3.5) Solder Dip • Optimum for 90 W HiFi output • High forward current transfer ratio hFE

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC3507 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 5.0±0.2 (0.7) 15.0±0.3 21.0±0.5 16.2±0.5 • Absolute Maximum Ratings TC = 25°C

Contextual Info: Power Transistors 2SD2250 Silicon NPN triple diffusion planar type darlington Unit: mm • Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector-base voltage Emitter open VCBO 160 V Collector-emitter voltage (Base open) VCEO 140 V Emitter-base voltage (Collector open)

Contextual Info: Power Transistors 2SB1347 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2029 Unit: mm 2.0±0.3 3.0±0.3 Unit Collector-base voltage Emitter open VCBO −160 V Collector-emitter voltage (Base open) VCEO −160 V

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC3979, 2SC3979A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage

2SD1707

Contextual Info: Power Transistors 2SD1707 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1156 5.0±0.2 • Absolute Maximum Ratings TC = 25°C φ 3.2±0.1 15.0±0.2 • Low collector to emitter saturation voltage VCE sat • Satisfactory linearity of forward current transfer ratio hFE

2SD1705

Abstract: 2SB1154 2sd170
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1154 5.0±0.2 (0.7) 15.0±0.3 (3.2) Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)

2SB1503

Abstract: 2SD2276 2sb15
Contextual Info: Power Transistors 2SD2276 Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1503 5.0±0.3 3.0 26.0±0.5 • Features ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open)

2SB1154

Abstract: 2SD1705
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1154 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1705 Unit: mm 5.0±0.2 M Di ain sc te on na tin nc ue e/ d (0.7) 15.0±0.3 (3.2) 11.0±0.2 • Features

2SC463

Abstract: 2SC4638
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC4638 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 5.5±0.2 Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short)

2SC4960

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC4960 Silicon NPN triple diffusion planar type For power switching Unit: mm 5.0±0.2 (0.7) 15.0±0.3 Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short)

2sc3743

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC3743 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 4.2±0.2 5.5±0.2 Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short)

2SB1255

Abstract: 2SD1895
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1255 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD1895 5.0±0.2 (0.7) 15.0±0.3 (3.2) 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip

2SD1964

Abstract: tf 130
Contextual Info: Power Transistors 2SD1964 Silicon NPN epitaxial planar type Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO 130 V Collector-emitter voltage (Base open) VCEO 80 V Emitter-base voltage (Collector open)

2SC3979

Abstract: 2SC3979A
Contextual Info: Power Transistors 2SC3979, 2SC3979A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage Emitter open Symbol Rating Unit VCBO 900 V 2SC3979 2SC3979A

2SB1054

Abstract: 2SD1485
Contextual Info: Power Transistors 2SB1054 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1485 Unit: mm 5.0±0.2 0.7 15.0±0.3 (3.2) 11.0±0.2 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip 16.2±0.5 • Excellent collector current IC characteristics of forward current

2SC4960

Contextual Info: Power Transistors 2SC4960 Silicon NPN triple diffusion planar type For power switching Unit: mm 5.0±0.2 0.7 15.0±0.3 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 900 V Collector-emitter voltage (E-B short)

2SB1255

Abstract: 2SD1895
Contextual Info: Power Transistors 2SD1895 Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1255 15.0±0.2 φ 3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 1.1±0.1 5.45±0.3 • Absolute Maximum Ratings TC = 25°C 10.9±0.5 Parameter

2SD1705

Abstract: 2SB1154
Contextual Info: Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1154 5.0±0.2 • Absolute Maximum Ratings TC = 25°C 15.0±0.2 φ 3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 1.1±0.1 5.45±0.3 Parameter Symbol Rating Unit